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MTFC32GAZAQHD-WT

Micron Technology

MTFC32GAZAQHD-WT by Micron Technology

MTFC32GAZAQHD-WT by Micron Technology is a 32GX8 NAND flash memory card with a memory density of 274877906944 bits. It operates synchronously and has a very thin profile with a terminal pitch of 0.5 mm. This flash memory card is commonly used in applications that require high-speed data storage and retrieval.

Median Price

$17.760

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,482 parts In-Stock

1+ parts

$13.390

100+ parts

$11.300

1k+ parts

-

10k+ parts

-

1,482

$13.390

$11.300

-

-

Mouser Electronics

USA . 1,214 parts In-Stock

1+ parts

$17.760

100+ parts

$15.640

1k+ parts

$15.480

10k+ parts

-

1,214

$17.760

$15.640

$15.480

-

DigiKey

USA . 33 parts In-Stock

1+ parts

$17.760

100+ parts

$15.165

1k+ parts

$14.292

10k+ parts

-

33

$17.760

$15.165

$14.292

-

Element14

Singapore . 356 parts In-Stock

1+ parts

$19.267

100+ parts

$14.982

1k+ parts

-

10k+ parts

-

356

$19.267

$14.982

-

-

Verical

USA . 743 parts In-Stock

1+ parts

$19.407

100+ parts

-

1k+ parts

-

10k+ parts

-

743

$19.407

-

-

-

Arrow

USA . 643 parts In-Stock

1+ parts

$19.422

100+ parts

-

1k+ parts

-

10k+ parts

-

643

$19.422

-

-

-

Future Electronics

Canada . 7,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$10.070

10k+ parts

-

7,600

-

-

$10.070

-

EBV Elektronik

Germany . 1,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,520

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 914 parts In-Stock

1+ parts

$13.842

100+ parts

-

1k+ parts

-

10k+ parts

-

914

$13.842

-

-

-

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$16.220

100+ parts

-

1k+ parts

-

10k+ parts

-

15

$16.220

-

-

-

Chip Stock

USA . 24,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,800

-

-

-

-

Sensible Micro Corp

USA . 940 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

940

-

-

-

-

Vyrian

USA . 705 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

705

-

-

-

-

Cyclops Electronics Ltd

UK . 483 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

483

-

-

-

-

ComSIT Distribution GmbH

Germany . 176 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

176

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 79 parts In-Stock

1+ parts

$2.357

100+ parts

-

1k+ parts

-

10k+ parts

-

79

$2.357

-

-

-

Aztec Data Supply Inc.

USA . 240 parts In-Stock

1+ parts

$4.200

100+ parts

-

1k+ parts

-

10k+ parts

-

240

$4.200

-

-

-

Ampacity Inc.

Singapore . 717 parts In-Stock

1+ parts

$12.380

100+ parts

-

1k+ parts

-

10k+ parts

-

717

$12.380

-

-

-

Semicontronic

India . 592 parts In-Stock

1+ parts

$12.380

100+ parts

$12.070

1k+ parts

$12.009

10k+ parts

-

592

$12.380

$12.070

$12.009

-

Corphita

USA . 840 parts In-Stock

1+ parts

$13.113

100+ parts

-

1k+ parts

-

10k+ parts

-

840

$13.113

-

-

-

Continental Prestige Electronics

USA . 422 parts In-Stock

1+ parts

$15.480

100+ parts

$11.940

1k+ parts

-

10k+ parts

-

422

$15.480

$11.940

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$16.220

100+ parts

$15.896

1k+ parts

-

10k+ parts

-

100

$16.220

$15.896

-

-

Argo Parts USA

USA . 4,887 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,887

-

-

-

-

Authorized Procurement Solutions

USA . 280 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

280

-

-

-

-

Overview

Looking for a reliable and high-quality flash memory solution? Look no further than the MTFC32GAZAQHD-WT by Micron Technology. With its advanced technology and top-notch manufacturing, this flash memory surpasses expectations. Whether you're a professional photographer, gamer, or tech enthusiast, this product offers incredible value, benefits, and advantages. Its compact size, wide temperature range, and synchronous operation make it suitable for various applications. Say goodbye to slow data transfer and hello to seamless performance with the MTFC32GAZAQHD-WT. Trust in Micron Technology's expertise and elevate your storage needs today!

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY. This material offers durability and protection for the flash memory, making it suitable for various applications.

Surface Mount

YES. This feature allows for easy installation and integration onto PCBs, making it convenient for manufacturers.

Package Shape

RECTANGULAR. The rectangular shape ensures compatibility with standard mounting techniques and provides efficient use of space in electronic devices.

Operating Mode

SYNCHRONOUS. With synchronous operation, data transfers are synchronized with an external clock, ensuring reliable and efficient performance.

No. of Terminals

153. The high number of terminals enables a wide range of connectivity options, enhancing compatibility with various systems.

Package Style (Meter)

GRID ARRAY, VERY THIN PROFILE, FINE PITCH. This package style offers a compact design with a thin profile and fine pitch, allowing for increased memory capacity in small form factor devices.

Maximum Operating Temperature

85 °C. The flash memory's ability to operate at high temperatures makes it suitable for use in environments with elevated heat levels.

Organization

32GX8. The organization of 32GX8 means the flash memory has a capacity of 32 gigabytes, with each word consisting of 8 bits, providing ample storage space for data-intensive applications.

Minimum Operating Temperature

25 °C. The flash memory's ability to function at low temperatures makes it suitable for use in various climates and industrial applications.

Terminal Position

BOTTOM. The terminal position at the bottom facilitates an easier and more compact arrangement on PCBs, optimizing space utilization.

Maximum Seated Height

0.9 mm. The flash memory's low seated height allows for integration into devices with limited vertical space, enabling its use in slim and compact designs.

Width

11.5 mm. The flash memory's narrow width ensures compatibility with standard electronic components and allows for flexible placement within devices.

Minimum Supply Voltage (Vsup)

2.7 V. The flash memory's ability to operate on low supply voltages makes it energy-efficient and suitable for battery-powered devices.

Type

NAND TYPE. The NAND type of flash memory is known for its high storage density, fast data access, and ability to retain data even without power, making it ideal for various storage applications.

Length

13 mm. The flash memory's compact length enables integration into space-constrained devices without compromising storage capacity.

Technology

CMOS. The use of CMOS technology ensures low power consumption, high speed, and reliable performance, making the flash memory a reliable choice for demanding applications.

Parallel or Serial

PARALLEL. The flash memory's parallel interface allows for faster data transfer rates and efficient simultaneous access to multiple data bits, making it suitable for applications that require high-speed data processing.

Terminal Form

BALL. The terminal form as a ball facilitates secure soldering and connection during assembly, enhancing the flash memory's reliability and ease of manufacturing.

No. of Words

34359738368 words. With a high number of words, the flash memory offers a vast amount of addressable locations for data storage, enabling its use in large-scale systems and extensive data storage applications.

Memory Width

8. The flash memory's memory width of 8 bits enables efficient data storage and retrieval, supporting compatibility with standard computer architectures and systems.

Terminal Pitch

0.5 mm. The flash memory's small terminal pitch allows for high-density mounting, providing greater memory capacity in a limited space, making it suitable for compact and portable devices.

No. of Words Code

32G. The flash memory's 32G word code represents the significant storage capability, making it ideal for applications that require extensive data storage and processing.

Maximum Supply Voltage (Vsup)

3.6 V. The flash memory's ability to operate at higher supply voltages ensures compatibility with a wide range of power sources, enhancing its versatility.

Memory Density

274877906944 bit. The flash memory's high memory density provides ample storage capacity, facilitating the handling and management of large volumes of data.

Memory IC Type

FLASH CARD. The flash card memory IC type represents a portable and versatile storage solution suitable for applications such as digital cameras, mobile devices, and many more.

Technical Specifications

Flash Memory MTFC32GAZAQHD-WT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Minimum Data Retention Time:

1

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

34359738368 words

No. of Words Code:

32G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

32GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Maximum Seated Height:

.9 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC32GAZAQHD-WT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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