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MT25QU512ABB8ESF-0AAT

Micron Technology

MT25QU512ABB8ESF-0AAT by Micron Technology

Micron Technology's MT25QU512ABB8ESF-0AAT is a 512Mx1 NOR flash memory with 536870912-bit density. Operating at 166MHz clock frequency, it has a supply voltage range of 1.7V to 2V and supports industrial temperature grade applications. With synchronous operation and AEC-Q100 screening level, this small outline package is ideal for automotive electronics requiring high-speed data storage.

Median Price

$15.050

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 1,127 parts In-Stock

1+ parts

$10.692

100+ parts

$8.117

1k+ parts

-

10k+ parts

-

1,127

$10.692

$8.117

-

-

Farnell

UK . 1,127 parts In-Stock

1+ parts

$11.679

100+ parts

$8.199

1k+ parts

$8.085

10k+ parts

-

1,127

$11.679

$8.199

$8.085

-

DigiKey

USA . 1,035 parts In-Stock

1+ parts

$15.050

100+ parts

$12.884

1k+ parts

$12.146

10k+ parts

-

1,035

$15.050

$12.884

$12.146

-

Mouser Electronics

USA . 2,103 parts In-Stock

1+ parts

$15.200

100+ parts

-

1k+ parts

-

10k+ parts

-

2,103

$15.200

-

-

-

Newark

USA . 1,310 parts In-Stock

1+ parts

$17.230

100+ parts

-

1k+ parts

-

10k+ parts

-

1,310

$17.230

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,492 parts In-Stock

1+ parts

$7.724

100+ parts

-

1k+ parts

-

10k+ parts

-

1,492

$7.724

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$9.886

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$9.886

-

-

-

Vyrian

USA . 1,371 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,371

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-

-

-

Chip Stock

USA . 1,125 parts In-Stock

1+ parts

-

100+ parts

-

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1,125

-

-

-

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Cyclops Electronics Ltd

UK . 673 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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673

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,389 parts In-Stock

1+ parts

$5.130

100+ parts

-

1k+ parts

-

10k+ parts

-

1,389

$5.130

-

-

-

Ampacity Inc.

Singapore . 1,692 parts In-Stock

1+ parts

$6.910

100+ parts

-

1k+ parts

-

10k+ parts

-

1,692

$6.910

-

-

-

Semicontronic

India . 1,372 parts In-Stock

1+ parts

$6.910

100+ parts

$6.737

1k+ parts

$6.703

10k+ parts

-

1,372

$6.910

$6.737

$6.703

-

Corphita

USA . 294 parts In-Stock

1+ parts

$7.317

100+ parts

-

1k+ parts

-

10k+ parts

-

294

$7.317

-

-

-

Continental Prestige Electronics

USA . 1,415 parts In-Stock

1+ parts

$9.570

100+ parts

$6.770

1k+ parts

-

10k+ parts

-

1,415

$9.570

$6.770

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-

Netroflash

USA . 100 parts In-Stock

1+ parts

$9.886

100+ parts

-

1k+ parts

$9.392

10k+ parts

$9.194

100

$9.886

-

$9.392

$9.194

Corohmni

South Africa . 238 parts In-Stock

1+ parts

$10.200

100+ parts

-

1k+ parts

-

10k+ parts

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238

$10.200

-

-

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$10.506

100+ parts

$9.981

1k+ parts

$9.981

10k+ parts

-

500

$10.506

$9.981

$9.981

-

Perfect Parts

USA . 3,226 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,226

-

-

-

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Kepictronics

USA . 1,174 parts In-Stock

1+ parts

-

100+ parts

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1,174

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-

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Futuretech Components

Singapore . 899 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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899

-

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Argo Parts USA

USA . 287 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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287

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Overview

Unlock the power of cutting-edge technology with the MT25QU512ABB8ESF-0AAT by Micron Technology. This high-quality flash memory device offers unparalleled reliability and performance, making it the perfect choice for a wide range of applications. From automotive to industrial electronics, this product delivers exceptional value, benefits, and advantages to customers seeking top-of-the-line memory solutions. Trust in Micron Technology's expertise and innovation to take your projects to the next level. Choose the MT25QU512ABB8ESF-0AAT for superior quality and performance you can count on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material ensures durability and reliability.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures high quality and reliability, making it suitable for automotive applications.

Package Shape: RECTANGULAR

The rectangular package shape enables easy integration into various electronic devices.

Operating Mode: SYNCHRONOUS

The synchronous operating mode enhances data transfer speed and efficiency.

Nominal Supply Voltage (Vsup): 1.8V

The low nominal supply voltage of 1.8V helps in reducing power consumption and increasing energy efficiency.

No. of Terminals: 16

With 16 terminals, this flash memory product offers a high level of connectivity and versatility.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact designs in electronic devices.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature of 105°C, this product can withstand harsh environmental conditions.

Organization: 512MX1

The 512MX1 organization provides a high capacity and efficient storage solution for data-intensive applications.

Technical Specifications

Flash Memory MT25QU512ABB8ESF-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

7.5 mm

Trade Compliance

MT25QU512ABB8ESF-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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