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MTFC4GACAJCN-4MITTR

Micron Technology

MTFC4GACAJCN-4MITTR by Micron Technology

Micron Technology's MTFC4GACAJCN-4MITTR is a 4GX8 MLC NAND flash memory with 34359738368-bit density. Operating at up to 52 MHz, it features a very thin profile and fine pitch grid array package suitable for industrial applications. With a wide temperature range (-40 to 85 °C), this synchronous memory offers high performance in compact dimensions.

Median Price

$10.519

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 20,000 parts In-Stock

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-

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$10.519

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20,000

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$10.519

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Chip Stock

USA . 16,000 parts In-Stock

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16,000

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Vyrian

USA . 4,151 parts In-Stock

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4,151

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BCID Electronics Ltd.

Israel . 3,000 parts In-Stock

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3,000

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ARCO, INC.

USA . 2,000 parts In-Stock

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2,000

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Digiode

USA . 1,525 parts In-Stock

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1,525

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Component Sense

UK . 991 parts In-Stock

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991

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 1,350 parts In-Stock

1+ parts

$3.366

100+ parts

$3.198

1k+ parts

$3.198

10k+ parts

-

1,350

$3.366

$3.198

$3.198

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Aztec Data Supply Inc.

USA . 3,156 parts In-Stock

1+ parts

$4.520

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3,156

$4.520

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AZTECH Wire

Italy . 834 parts In-Stock

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$5.874

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834

$5.874

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Semicontronic

India . 2,647 parts In-Stock

1+ parts

$27.000

100+ parts

$26.325

1k+ parts

$26.190

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2,647

$27.000

$26.325

$26.190

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Corohmni

South Africa . 887 parts In-Stock

1+ parts

$27.740

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887

$27.740

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Ampacity Inc.

Singapore . 1,251 parts In-Stock

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$29.000

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$29.000

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Continental Prestige Electronics

USA . 3,780 parts In-Stock

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3,780

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Argo Parts USA

USA . 2,663 parts In-Stock

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Lucentia Tech

USA . 1,500 parts In-Stock

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$3.485

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$3.485

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$3.485

1,500

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$3.485

$3.485

$3.485

Corphita

USA . 874 parts In-Stock

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874

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Bastille Electronics

Australia . 750 parts In-Stock

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750

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Modulus Dynamics

Lithuania . 500 parts In-Stock

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500

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Authorized Procurement Solutions

USA . 400 parts In-Stock

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400

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Microchip USA

USA . 324 parts In-Stock

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324

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Robosynatics

Brazil . 150 parts In-Stock

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Formix International (Excess)

India . 43 parts In-Stock

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Overview

Unlock the power of reliable and high-quality flash memory technology with the MTFC4GACAJCN-4MITTR from Micron Technology. Designed with precision and efficiency in mind, Micron Technology combines cutting-edge innovation with industry-leading expertise to deliver top-of-the-line flash memory solutions for a wide range of applications. Whether you're looking to enhance your storage capabilities or boost the performance of your devices, this product offers unparalleled value, benefits, and advantages that will take your projects to the next level. Trust in Micron Technology to provide you with the quality and reliability you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

No. of Terminals: 153

Having 153 terminals allows for a high level of connectivity and data transfer, ensuring efficient performance.

Operating Mode: SYNCHRONOUS

Synchronous operation enables precise timing and coordination of data transfers, improving overall system performance.

Maximum Clock Frequency (fCLK): 52 MHz

With a maximum clock frequency of 52 MHz, the product can support high-speed data transfers, enhancing the user experience.

Type: MLC NAND TYPE

The MLC NAND type technology offers a high level of data storage capacity and reliability, making it suitable for a wide range of applications.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that the product can withstand harsh environmental conditions, making it suitable for industrial use.

Memory Density: 34359738368 bit

With a high memory density, the product can store a large amount of data, making it suitable for applications that require extensive storage capacity.

Technical Specifications

Flash Memory MTFC4GACAJCN-4MITTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

MLC NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC4GACAJCN-4MITTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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