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MTFC64GAPALBH-IT

Micron Technology

MTFC64GAPALBH-IT by Micron Technology

MTFC64GAPALBH-IT by Micron Technology is a 64GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and wide temperature range support from -40°C to 85°C.

Median Price

$40.818

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 7,600 parts In-Stock

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-

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7,600

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$40.818

100+ parts

-

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50

$40.818

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NAC Semi

USA . 6,895 parts In-Stock

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6,895

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Chip Stock

USA . 6,500 parts In-Stock

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6,500

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Vyrian

USA . 6,331 parts In-Stock

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6,331

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ARCO, INC.

USA . 4,560 parts In-Stock

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4,560

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Digiode

USA . 1,585 parts In-Stock

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1,585

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Cyclops Electronics Ltd

UK . 1,000 parts In-Stock

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1,000

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Conversion2

USA . 202 parts In-Stock

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202

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Distributors (Availability)

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$3.597

100+ parts

$3.417

1k+ parts

$3.417

10k+ parts

-

100

$3.597

$3.417

$3.417

-

Aztec Data Supply Inc.

USA . 3,021 parts In-Stock

1+ parts

$5.180

100+ parts

-

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3,021

$5.180

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Corohmni

South Africa . 15 parts In-Stock

1+ parts

$5.909

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15

$5.909

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AZTECH Wire

Italy . 283 parts In-Stock

1+ parts

$13.950

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283

$13.950

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Semicontronic

India . 7,405 parts In-Stock

1+ parts

$22.000

100+ parts

$21.450

1k+ parts

$21.340

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7,405

$22.000

$21.450

$21.340

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Ampacity Inc.

Singapore . 172 parts In-Stock

1+ parts

$28.000

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172

$28.000

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Continental Prestige Electronics

USA . 443 parts In-Stock

1+ parts

$37.970

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$37.211

443

$37.970

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$37.211

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Argo Parts USA

USA . 3,928 parts In-Stock

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3,928

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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2,000

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Corphita

USA . 1,541 parts In-Stock

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1,541

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A-Z Elektronik GmbH

Germany . 1,000 parts In-Stock

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1,000

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Futuretech Components

Singapore . 385 parts In-Stock

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385

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Microchip USA

USA . 100 parts In-Stock

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100

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Netroflash

USA . 50 parts In-Stock

1+ parts

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100+ parts

$40.001

1k+ parts

$38.777

10k+ parts

$37.960

50

-

$40.001

$38.777

$37.960

Akira Global LLC

USA . 8 parts In-Stock

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8

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Overview

Upgrade your devices with the cutting-edge MTFC64GAPALBH-IT Flash Memory by Micron Technology. Known for its superior quality and reliability, Micron Technology offers top-notch products that guarantee peak performance. This flash memory is perfect for a wide range of applications in industries such as automotive, industrial, and consumer electronics. With its high-speed synchronous operation and impressive memory density, this product provides exceptional value, speed, and efficiency to customers looking for the best in flash memory technology. Elevate your devices to the next level with Micron Technology's MTFC64GAPALBH-IT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the flash memory, making it suitable for various environments.

Surface Mount: YES

Surface mount design allows for easy integration into circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can reliably operate in demanding industrial environments.

Organization: 64GX8

The 64Gx8 organization provides a large memory capacity and efficient data storage capabilities.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency allows for fast data transfer speeds, enhancing overall performance of the flash memory.

Minimum Supply Voltage (Vsup): 2.7 V

Low minimum supply voltage enables efficient power consumption and compatibility with a wide range of devices.

Technical Specifications

Flash Memory MTFC64GAPALBH-IT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

549755813888 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

68719476736 words

No. of Words Code:

64G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64GX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC64GAPALBH-IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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