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MTFC16GAPALBH-AAT

Micron Technology

MTFC16GAPALBH-AAT by Micron Technology

MTFC16GAPALBH-AAT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. It operates synchronously at up to 200 MHz clock frequency, suitable for industrial applications. With a thin profile and fine pitch grid array package style, it offers reliable performance in a compact form factor.

Median Price

$22.520

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,490 parts In-Stock

1+ parts

$22.520

100+ parts

$16.870

1k+ parts

$16.290

10k+ parts

-

1,490

$22.520

$16.870

$16.290

-

Verical

USA . 1,490 parts In-Stock

1+ parts

$22.520

100+ parts

$16.870

1k+ parts

$16.290

10k+ parts

-

1,490

$22.520

$16.870

$16.290

-

Mouser Electronics

USA . 5,229 parts In-Stock

1+ parts

$23.730

100+ parts

$18.390

1k+ parts

$17.870

10k+ parts

-

5,229

$23.730

$18.390

$17.870

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,926 parts In-Stock

1+ parts

$21.394

100+ parts

-

1k+ parts

-

10k+ parts

-

1,926

$21.394

-

-

-

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$37.916

100+ parts

-

1k+ parts

-

10k+ parts

-

15

$37.916

-

-

-

NAC Semi

USA . 5,493 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$24.910

5,493

-

-

-

$24.910

Vyrian

USA . 2,569 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,569

-

-

-

-

ComSIT Distribution GmbH

Germany . 312 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

312

-

-

-

-

ComSIT USA

USA . 112 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

112

-

-

-

-

Bristol Electronics

USA . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 32 parts In-Stock

1+ parts

$4.759

100+ parts

-

1k+ parts

-

10k+ parts

-

32

$4.759

-

-

-

Aztec Data Supply Inc.

USA . 1,400 parts In-Stock

1+ parts

$5.080

100+ parts

-

1k+ parts

-

10k+ parts

-

1,400

$5.080

-

-

-

Ampacity Inc.

Singapore . 2,733 parts In-Stock

1+ parts

$19.140

100+ parts

-

1k+ parts

-

10k+ parts

-

2,733

$19.140

-

-

-

Semicontronic

India . 2,482 parts In-Stock

1+ parts

$19.140

100+ parts

$18.662

1k+ parts

$18.566

10k+ parts

-

2,482

$19.140

$18.662

$18.566

-

Corphita

USA . 2,428 parts In-Stock

1+ parts

$20.268

100+ parts

-

1k+ parts

-

10k+ parts

-

2,428

$20.268

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

$37.157

100+ parts

-

1k+ parts

$35.671

10k+ parts

-

100

$37.157

-

$35.671

-

Continental Prestige Electronics

USA . 5,846 parts In-Stock

1+ parts

$37.916

100+ parts

-

1k+ parts

-

10k+ parts

$37.157

5,846

$37.916

-

-

$37.157

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Sternenhof Electronics (Excess)

Switzerland . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Microchip USA

USA . 963 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

963

-

-

-

-

Argo Parts USA

USA . 156 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

156

-

-

-

-

Overview

Discover the cutting-edge MTFC16GAPALBH-AAT flash memory by Micron Technology, a top-tier manufacturer known for superior quality and innovation. This innovative product offers a wide range of applications in various industries, providing customers with reliable performance and seamless functionality. With its advanced features and high-speed operation, this flash memory brings exceptional value and benefits to every user. Experience the advantage of top-notch technology with Micron's MTFC16GAPALBH-AAT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for portable electronic devices.

Operating Mode: SYNCHRONOUS

Provides synchronized data transfer for faster performance and efficiency.

Write Protection: HARDWARE

Enhanced security feature to prevent accidental data overwrites.

Temperature Grade: INDUSTRIAL

Designed to operate in a wide range of temperatures, suitable for industrial applications.

Memory Density: 137438953472 bit

High memory density for storing large amounts of data efficiently.

Technical Specifications

Flash Memory MTFC16GAPALBH-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NAND TYPE

Width:

11.5 mm

Write Protection:

HARDWARE

Trade Compliance

MTFC16GAPALBH-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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