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MTFC32GAZAQHD-AAT

Micron Technology

MTFC32GAZAQHD-AAT by Micron Technology

Micron Technology's MTFC32GAZAQHD-AAT is a 32GX8 NAND flash memory with 1.8V supply voltage, operating at up to 200MHz clock frequency. Designed for industrial applications, it features a very thin profile package style and offers high memory density of 274877906944 bits.

Median Price

$24.721

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 1,520 parts In-Stock

1+ parts

$23.343

100+ parts

-

1k+ parts

-

10k+ parts

-

1,520

$23.343

-

-

-

Mouser Electronics

USA . 2,259 parts In-Stock

1+ parts

$23.590

100+ parts

$20.120

1k+ parts

$19.460

10k+ parts

-

2,259

$23.590

$20.120

$19.460

-

Element14

Singapore . 3,381 parts In-Stock

1+ parts

$25.852

100+ parts

$21.462

1k+ parts

-

10k+ parts

-

3,381

$25.852

$21.462

-

-

Farnell

UK . 3,381 parts In-Stock

1+ parts

$29.567

100+ parts

$23.872

1k+ parts

-

10k+ parts

-

3,381

$29.567

$23.872

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 117 parts In-Stock

1+ parts

$14.354

100+ parts

-

1k+ parts

-

10k+ parts

-

117

$14.354

-

-

-

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$27.610

100+ parts

-

1k+ parts

-

10k+ parts

-

450

$27.610

-

-

-

NAC Semi

USA . 52,703 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$26.900

52,703

-

-

-

$26.900

Chip Stock

USA . 19,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,900

-

-

-

-

Vyrian

USA . 1,845 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,845

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,629 parts In-Stock

1+ parts

$12.840

100+ parts

-

1k+ parts

-

10k+ parts

-

1,629

$12.840

-

-

-

Corphita

USA . 2,273 parts In-Stock

1+ parts

$13.599

100+ parts

-

1k+ parts

-

10k+ parts

-

2,273

$13.599

-

-

-

Continental Prestige Electronics

USA . 563 parts In-Stock

1+ parts

$22.950

100+ parts

-

1k+ parts

-

10k+ parts

-

563

$22.950

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$27.610

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

$27.610

-

-

-

Semicontronic

India . 1,649 parts In-Stock

1+ parts

$27.950

100+ parts

$27.251

1k+ parts

$27.112

10k+ parts

-

1,649

$27.950

$27.251

$27.112

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Argo Parts USA

USA . 4,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,600

-

-

-

-

Overview

Experience the ultimate in storage reliability with the MTFC32GAZAQHD-AAT by Micron Technology. As a leader in flash memory technology, Micron ensures top-notch quality and performance in every product. This flash memory device is designed for industrial applications, offering a wide operating temperature range and high clock frequency capabilities. With a compact design and advanced features, this NAND type memory card provides exceptional value and benefits for customers seeking efficient data storage solutions. Trust Micron Technology to deliver cutting-edge memory products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this flash memory durable and lightweight, perfect for portable devices.

Surface Mount: YES

With surface mount capability, this flash memory is easy to install and suitable for compact designs.

Screening Level: AEC-Q100

Meeting AEC-Q100 standards ensures that this flash memory is of high quality and reliability, making it ideal for automotive applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on a PCB, making this flash memory a space-saving option.

Operating Mode: SYNCHRONOUS

Operating in synchronous mode ensures faster data transfer rates, making this flash memory ideal for applications that require high performance.

Nominal Supply Voltage / Vsup (V): 1.8

With a low nominal supply voltage of 1.8V, this flash memory is energy-efficient and suitable for battery-powered devices.

No. of Terminals: 153

The high number of terminals allows for a greater connection interface, making this flash memory versatile and suitable for a variety of applications.

Package Style: GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array package style with a very thin profile and fine pitch design enhances signal integrity and makes this flash memory suitable for high-density applications.

Technical Specifications

Flash Memory MTFC32GAZAQHD-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

34359738368 words

No. of Words Code:

32G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC32GAZAQHD-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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