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S29GL512P10TFIR10

Cypress Semiconductor

S29GL512P10TFIR10 by Cypress Semiconductor

Cypress Semiconductor's S29GL512P10TFIR10 is a 512M NOR flash memory with 3.3V supply, operating from -40 to 85°C. Featuring asynchronous mode, it has a page size of 8/16 words and sector size of 128K words. Ideal for industrial applications requiring fast access times and high memory density.

Median Price

$6.546

Lifecycle Status

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Arrow

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Overview

Unleash the power of cutting-edge technology with the S29GL512P10TFIR10 by Cypress Semiconductor. As a leading manufacturer in the industry, Cypress Semiconductor delivers top-quality Flash Memory products that excel in performance and reliability. Ideal for a wide range of applications, this product offers unmatched value and benefits to customers seeking seamless operation and efficient data storage solutions. Discover the advantages of Cypress Semiconductor's innovative technology and elevate your projects to new heights with the S29GL512P10TFIR10.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, ensuring it can withstand tough conditions.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage allows for efficient power consumption while still providing enough power for the flash memory to function effectively.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of read and write operations, improving the overall performance and speed of the flash memory.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range ensures that the flash memory can function reliably even in hot environments.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and reliability, making it a suitable choice for flash memory devices.

Memory Density: 536870912 bit

The high memory density allows for storing a large amount of data in a compact size, making this flash memory suitable for applications requiring high storage capacity.

No. of Sectors/Size: 512

Having 512 sectors allows for efficient organization and management of data, improving the overall performance and reliability of the flash memory.

Technical Specifications

Flash Memory S29GL512P10TFIR10 attributes and parameters. Explore more Flash Memory devices from Cypress Semiconductor

Specs

Maximum Access Time:

100 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

1

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Sectors/Size:

512

No. of Terminals:

56

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

110 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

S29GL512P10TFIR10 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Cypress Semiconductor

Cypress Semiconductor was an American semiconductor design and manufacturing company. It offered NOR flash memories, F-RAM and SRAM Traveo microcontrollers, PSoC programmable system-on-chip solutions, analog and PMIC Power Management ICs, CapSense capacitive touch-sensing controllers, Wireless BLE Bluetooth Low-Energy and USB connectivity solutions. Its headquarters were in San Jose, California, with operations in the United States, Ireland, India and the Philippines. In April 2016, Cypress Semiconductors announced the acquisition of Broadcom’s Wireless Internet of Things Business. The deal was closed in July 2016. In June 2019, Infineon Technologies announced it would acquire Cypress for $9.4 billion.The deal closed in April 2020, making Infineon one of the world's top 10 semiconductor manufacturers. Some of its main competitors included Microchip Technology, NXP Semiconductors, Renesas Electronics and Micron Technology.

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