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MT28EW512ABA1HJS-0SIT

Micron Technology

MT28EW512ABA1HJS-0SIT by Micron Technology

MT28EW512ABA1HJS-0SIT by Micron Technology is a NOR flash memory with 32MX16 organization, 33554432 words, and 536870912-bit density. Operating at -40 to 85°C, it has a peak reflow temp of 260°C. Ideal for industrial applications requiring fast access times and reliable data storage.

Median Price

$13.460

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,050 parts In-Stock

1+ parts

$5.250

100+ parts

-

1k+ parts

-

10k+ parts

-

1,050

$5.250

-

-

-

Arrow

USA . 384 parts In-Stock

1+ parts

$11.479

100+ parts

-

1k+ parts

-

10k+ parts

-

384

$11.479

-

-

-

Verical

USA . 384 parts In-Stock

1+ parts

$11.479

100+ parts

-

1k+ parts

-

10k+ parts

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384

$11.479

-

-

-

Element14

Singapore . 1,637 parts In-Stock

1+ parts

$15.440

100+ parts

$12.710

1k+ parts

-

10k+ parts

-

1,637

$15.440

$12.710

-

-

DigiKey

USA . 354 parts In-Stock

1+ parts

$20.610

100+ parts

$17.610

1k+ parts

$16.509

10k+ parts

-

354

$20.610

$17.610

$16.509

-

Mouser Electronics

USA . 834 parts In-Stock

1+ parts

$22.830

100+ parts

-

1k+ parts

-

10k+ parts

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834

$22.830

-

-

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Newark

USA . 576 parts In-Stock

1+ parts

$25.860

100+ parts

-

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576

$25.860

-

-

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EBV Elektronik

Germany . 14,976 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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14,976

-

-

-

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Avnet

USA . 5,184 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,184

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-

-

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Future Electronics

Canada . 1,152 parts In-Stock

1+ parts

-

100+ parts

$6.050

1k+ parts

$5.950

10k+ parts

-

1,152

-

$6.050

$5.950

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 239 parts In-Stock

1+ parts

$4.988

100+ parts

-

1k+ parts

-

10k+ parts

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239

$4.988

-

-

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Nova Conductors

Japan . 65 parts In-Stock

1+ parts

$9.002

100+ parts

-

1k+ parts

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10k+ parts

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65

$9.002

-

-

-

Chip Stock

USA . 17,100 parts In-Stock

1+ parts

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100+ parts

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17,100

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NAC Semi

USA . 16,128 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$11.840

10k+ parts

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16,128

-

-

$11.840

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,000

-

-

-

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Cyclops Electronics Ltd

UK . 3,904 parts In-Stock

1+ parts

-

100+ parts

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3,904

-

-

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Vyrian

USA . 1,160 parts In-Stock

1+ parts

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1,160

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-

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Sensible Micro Corp

USA . 544 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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544

-

-

-

-

IBS Electronics

USA . 288 parts In-Stock

1+ parts

-

100+ parts

$128.048

1k+ parts

-

10k+ parts

-

288

-

$128.048

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 115 parts In-Stock

1+ parts

$2.646

100+ parts

-

1k+ parts

-

10k+ parts

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115

$2.646

-

-

-

Semicontronic

India . 1,680 parts In-Stock

1+ parts

$4.460

100+ parts

$4.348

1k+ parts

$4.326

10k+ parts

-

1,680

$4.460

$4.348

$4.326

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Ampacity Inc.

Singapore . 1,606 parts In-Stock

1+ parts

$4.460

100+ parts

-

1k+ parts

-

10k+ parts

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1,606

$4.460

-

-

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Corphita

USA . 174 parts In-Stock

1+ parts

$4.725

100+ parts

-

1k+ parts

-

10k+ parts

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174

$4.725

-

-

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Aztec Data Supply Inc.

USA . 4,856 parts In-Stock

1+ parts

$5.630

100+ parts

-

1k+ parts

-

10k+ parts

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4,856

$5.630

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Netroflash

USA . 50 parts In-Stock

1+ parts

$9.002

100+ parts

-

1k+ parts

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10k+ parts

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50

$9.002

-

-

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Continental Prestige Electronics

USA . 1,637 parts In-Stock

1+ parts

$9.330

100+ parts

$6.930

1k+ parts

-

10k+ parts

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1,637

$9.330

$6.930

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-

Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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8,000

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A-Z Elektronik GmbH

Germany . 5,743 parts In-Stock

1+ parts

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5,743

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Argo Parts USA

USA . 4,184 parts In-Stock

1+ parts

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4,184

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RC Electronics

USA . 4,161 parts In-Stock

1+ parts

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4,161

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S.R.D Solutions

India . 3,100 parts In-Stock

1+ parts

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3,100

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Kepictronics

USA . 788 parts In-Stock

1+ parts

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788

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-

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iodParts Technologies Inc.

India . 40 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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40

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-

Overview

Unleash the power of reliable and high-quality flash memory with the MT28EW512ABA1HJS-0SIT by Micron Technology. This cutting-edge product offers a wide range of applications in various industries, providing customers with seamless performance and efficiency. With Micron's trusted reputation for innovation and excellence, you can trust that this flash memory will exceed your expectations. Experience the value and benefits of superior technology with the MT28EW512ABA1HJS-0SIT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Allows for easy and secure installation on printed circuit boards, saving space in electronic devices.

Operating Mode: ASYNCHRONOUS

Enables independent operation without requiring synchronization, offering flexibility in data access.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage level, ensuring compatibility with a wide range of devices.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Can function in low temperature environments, providing reliability in diverse settings.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed operation, optimizing performance.

No. of Words: 33554432 words

Offers a large memory capacity, allowing for storage of a significant amount of data.

Memory Density: 536870912 bit

Provides high-density memory storage, enabling efficient data handling and processing.

Maximum Access Time: 95 ns

Delivers fast access speeds, reducing latency and enhancing overall system performance.

Technical Specifications

Flash Memory MT28EW512ABA1HJS-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

95 ns

Alternate Memory Width:

8

JESD-30 Code:

R-PDSO-G56

Length:

18.4 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

56

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

MT28EW512ABA1HJS-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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