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MT28EW256ABA1HJS-0SITTR

Micron Technology

MT28EW256ABA1HJS-0SITTR by Micron Technology

Micron Technology's MT28EW256ABA1HJS-0SITTR is a 16Mx16 NOR flash memory with 3V supply voltage, 85°C max temp, and 70ns access time. Ideal for applications requiring high endurance (100K cycles) and fast data polling, it features a compact rectangular package with gull wing terminals for easy surface mounting.

Median Price

$16.220

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 855 parts In-Stock

1+ parts

$16.220

100+ parts

$13.876

1k+ parts

$13.080

10k+ parts

$12.525

855

$16.220

$13.876

$13.080

$12.525

Mouser Electronics

USA . 1,152 parts In-Stock

1+ parts

$21.550

100+ parts

-

1k+ parts

-

10k+ parts

-

1,152

$21.550

-

-

-

Future Electronics

Canada . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$4.600

8,000

-

-

-

$4.600

Avnet

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,600

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$6.910

100+ parts

-

1k+ parts

-

10k+ parts

-

870

$6.910

-

-

-

Digiode

USA . 2,292 parts In-Stock

1+ parts

$8.540

100+ parts

-

1k+ parts

-

10k+ parts

-

2,292

$8.540

-

-

-

Chip Stock

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,000

-

-

-

-

IBS Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$5.980

8,000

-

-

-

$5.980

Component Sense

UK . 4,760 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,760

-

-

-

-

Vyrian

USA . 1,043 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,043

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 6,197 parts In-Stock

1+ parts

$6.910

100+ parts

-

1k+ parts

-

10k+ parts

$6.772

6,197

$6.910

-

-

$6.772

Netroflash

USA . 500 parts In-Stock

1+ parts

$6.910

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$6.910

-

-

-

Ampacity Inc.

Singapore . 809 parts In-Stock

1+ parts

$7.640

100+ parts

-

1k+ parts

-

10k+ parts

-

809

$7.640

-

-

-

Corphita

USA . 2,268 parts In-Stock

1+ parts

$8.091

100+ parts

-

1k+ parts

-

10k+ parts

-

2,268

$8.091

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 5,099 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,099

-

-

-

-

Epart123

USA . 3,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$13.500

10k+ parts

$13.500

3,200

-

-

$13.500

$13.500

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Argo Parts USA

USA . 593 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

593

-

-

-

-

Overview

Experience superior performance and reliability with the MT28EW256ABA1HJS-0SITTR by Micron Technology. As a leading manufacturer in the industry, Micron delivers top-notch quality flash memory solutions for a wide range of applications. With a focus on innovation and cutting-edge technology, this product offers customers unmatched value, benefits, and advantages. Whether you're looking to boost your device's storage capacity or enhance its speed and efficiency, the MT28EW256ABA1HJS-0SITTR is the perfect choice for all your memory needs. Trust Micron to deliver excellence in every product they create.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for portable devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for efficient data transfer, enhancing the overall performance of the product.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal voltage of 3V ensures compatibility with a wide range of electronic systems.

Organization: 16MX16

The high organization of 16MX16 provides a large memory capacity, suitable for storing a vast amount of data.

Technology: CMOS

Utilizing CMOS technology results in low power consumption and high reliability, making the product energy-efficient.

Endurance: 100000 Write/Erase Cycles

With a high endurance of 100000 write/erase cycles, the product offers long-lasting performance and reliability.

Technical Specifications

Flash Memory MT28EW256ABA1HJS-0SITTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Alternate Memory Width:

8

Command User Interface:

NO

Common Flash Interface:

YES

Data Polling:

YES

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G56

Length:

18.4 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

56

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

16

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000135 Amp

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

MT28EW256ABA1HJS-0SITTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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