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S71WS256PC0HH3YR0

Infineon Technologies

S71WS256PC0HH3YR0 by Infineon Technologies

S71WS256PC0HH3YR0 by Infineon Technologies is a 16MX16 flash memory with synchronous operation. It has a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and can operate in temperatures ranging from -25 to 85 °C. This memory IC is commonly used in applications requiring high-density storage and fast access times.

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4

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1k+

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Vyrian

USA . 614 parts In-Stock

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Digiode

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Chip Stock

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Nova Conductors

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Modulus Dynamics

Lithuania . 4,793 parts In-Stock

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$4.670

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$4.483

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Semicontronic

India . 1,573 parts In-Stock

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AZTECH Wire

Italy . 286 parts In-Stock

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Component Stockers USA

USA . 597 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Continental Prestige Electronics

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Bastille Electronics

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Microchip USA

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Authorized Procurement Solutions

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Corphita

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Argo Parts USA

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Overview

Discover the S71WS256PC0HH3YR0 by Infineon Technologies, a high-quality flash memory device that offers unparalleled performance and reliability. With its synchronous operating mode and mixed memory type of Flash+PSRAM, this product ensures smooth and efficient data storage. Its compact rectangular shape and surface mount capability make it ideal for various applications. Infineon Technologies, known for their cutting-edge technology and superior manufacturing processes, guarantees a reliable and durable product. Experience seamless data management and enhanced performance with the S71WS256PC0HH3YR0, an essential solution for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's package body material is made of plastic/epoxy, which provides durability and protection for the flash memory module, making it a reliable choice for long-term use.

Surface Mount: YES

With surface mount capability, this flash memory can be easily mounted on circuit boards, offering convenience and flexibility in various electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape of this flash memory allows for efficient utilization of space on printed circuit boards, ensuring optimal design and layout in electronic devices.

Operating Mode: SYNCHRONOUS

By operating in synchronous mode, this flash memory enables faster data transfer rates and synchronous communication with other components, enhancing overall system performance.

Mixed Memory Type: FLASH+PSRAM

The combination of flash and PSRAM memory types in this product provides a versatile solution for storing and retrieving different types of data, offering flexibility and compatibility in diverse applications.

Nominal Supply Voltage / Vsup (V): 1.8

With a nominal supply voltage of 1.8V, this flash memory offers efficient power consumption while maintaining reliable performance, making it an energy-efficient choice.

Power Supplies (V): 1.8

Operating at a power supply voltage of 1.8V, this flash memory ensures compatibility with various electronic systems and devices, providing seamless integration and hassle-free operation.

No. of Terminals: 84

Featuring 84 terminals, this flash memory module enables easy connectivity and integration within complex circuit setups, facilitating smooth data transmission and processing.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array package style, combined with a thin profile and fine pitch, ensures efficient use of space on circuit boards, allowing for compact and streamlined designs in electronic devices.

Maximum Operating Temperature: 85 °C

The flash memory's maximum operating temperature of 85°C ensures reliable performance even under high-temperature conditions, making it suitable for demanding applications and environments.

Organization: 16MX16

With an organization of 16MX16, this flash memory offers a high memory capacity, allowing for extensive data storage and retrieval capabilities, ideal for applications requiring ample memory resources.

Minimum Operating Temperature: -25 °C

Operating reliably in temperatures as low as -25°C, this flash memory module is suitable for use in various climatic conditions and environments, ensuring stable performance in diverse settings.

Terminal Position: BOTTOM

The bottom terminal position of this flash memory eases the integration and connection of the module within electronic systems, simplifying the assembly process and enhancing overall system efficiency.

Maximum Seated Height: 1.2 mm

With a maximum seated height of 1.2mm, this flash memory's compact profile allows for low-profile design and easy integration within slim devices, facilitating sleek and space-saving product designs.

Width: 8 mm

Measuring 8mm in width, this flash memory module offers a compact form factor, enabling it to fit seamlessly within various electronic systems or devices with limited space, ensuring versatile and efficient product designs.

Minimum Supply Voltage (Vsup): 1.7 V

This flash memory module operates reliably at a minimum supply voltage of 1.7V, ensuring wide compatibility with different power sources and offering flexibility for various system requirements.

Length: 11.6 mm

With a length of 11.6mm, this flash memory module provides a compact and space-saving solution for integrating within electronic devices, allowing for efficient and aesthetically pleasing product designs.

Programming Voltage (V): 1.8

The programming voltage of 1.8V ensures compatibility with standard programming interfaces, simplifying the programming process and ensuring seamless integration within existing systems or devices.

Technology: CMOS

Built using CMOS technology, this flash memory module offers low power consumption, high-speed operation, and reliable performance, making it an excellent choice for energy-efficient and high-performance applications.

Parallel or Serial: PARALLEL

Operating in parallel mode, this flash memory allows for faster data transfer rates, efficient handling of large data volumes, and seamless integration within parallel-based systems or devices.

Terminal Form: BALL

With a ball terminal form, this flash memory module offers improved electrical contact and durability, ensuring stable and reliable operation, making it a robust choice for demanding applications.

No. of Words: 16777216 words

Sporting a vast storage capacity of 16777216 words, this flash memory module provides ample space for storing a wide range of data, enabling comprehensive data management and efficient system performance.

Memory Width: 16

With a memory width of 16 bits, this flash memory module allows for efficient data transfer and processing, enabling smooth operation and optimal performance in various electronic systems.

Terminal Pitch: 0.8 mm

The terminal pitch of 0.8mm enhances connectivity and compatibility with standard PCB layouts, facilitating easy integration and enhancing assembly efficiency in electronic devices.

No. of Words Code: 16M

Featuring a code size of 16M, this flash memory allows for extensive data storage and retrieval capabilities, accommodating complex software and data requirements, making it suitable for robust applications.

Maximum Supply Voltage (Vsup): 1.95 V

Operating within a maximum supply voltage of 1.95V, this flash memory module ensures reliable performance and compatibility with a wide range of power sources, providing flexibility for various system configurations.

Memory Density: 268435456 bit

With a high memory density of 268435456 bits, this flash memory module offers enhanced data storage capacity, enabling efficient management of large datasets and handling data-intensive applications.

Memory IC Type: FLASH

Being a flash memory IC, this product provides non-volatile storage capabilities, allowing for data retention even when power is disconnected, making it a reliable choice for critical data storage applications.

Maximum Access Time: 80 ns

With a maximum access time of 80ns, this flash memory module enables fast and efficient data retrieval, offering quick response times and ensuring smooth operation in time-sensitive applications.

Technical Specifications

Flash Memory S71WS256PC0HH3YR0 attributes and parameters. Explore more Flash Memory devices from Infineon Technologies

Specs

Maximum Access Time:

80 ns

JESD-30 Code:

R-PBGA-B84

Length:

11.6 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

84

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA84,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

S71WS256PC0HH3YR0 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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