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MT25QU128ABB8E12-0AUT

Micron Technology

MT25QU128ABB8E12-0AUT by Micron Technology

Micron Technology's MT25QU128ABB8E12-0AUT is a 16MX8 flash memory IC with 16777216 words capacity. Operating at 166 MHz, it supports synchronous mode and has a supply voltage range of 1.7V to 2V. Designed for automotive applications, this thin-profile grid array package offers high memory density and AEC-Q100 screening level.

Median Price

$7.310

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,140 parts In-Stock

1+ parts

$4.220

100+ parts

$3.590

1k+ parts

$3.430

10k+ parts

$3.310

1,140

$4.220

$3.590

$3.430

$3.310

Farnell

UK . 1,107 parts In-Stock

1+ parts

$6.370

100+ parts

$4.500

1k+ parts

$4.320

10k+ parts

-

1,107

$6.370

$4.500

$4.320

-

Element14

Singapore . 1,107 parts In-Stock

1+ parts

$8.250

100+ parts

$6.580

1k+ parts

$6.280

10k+ parts

-

1,107

$8.250

$6.580

$6.280

-

Newark

USA . 962 parts In-Stock

1+ parts

$9.000

100+ parts

-

1k+ parts

-

10k+ parts

-

962

$9.000

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 683 parts In-Stock

1+ parts

$4.304

100+ parts

-

1k+ parts

-

10k+ parts

-

683

$4.304

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$4.660

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$4.660

-

-

-

Chip Stock

USA . 21,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,100

-

-

-

-

Vyrian

USA . 306 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

306

-

-

-

-

Bristol Electronics

USA . 11 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 286 parts In-Stock

1+ parts

$3.590

100+ parts

$3.500

1k+ parts

$3.482

10k+ parts

-

286

$3.590

$3.500

$3.482

-

Ampacity Inc.

Singapore . 461 parts In-Stock

1+ parts

$3.850

100+ parts

-

1k+ parts

-

10k+ parts

-

461

$3.850

-

-

-

Corphita

USA . 665 parts In-Stock

1+ parts

$4.077

100+ parts

-

1k+ parts

-

10k+ parts

-

665

$4.077

-

-

-

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$4.751

100+ parts

$4.514

1k+ parts

$4.514

10k+ parts

-

3,000

$4.751

$4.514

$4.514

-

Aztec Data Supply Inc.

USA . 2,190 parts In-Stock

1+ parts

$5.550

100+ parts

-

1k+ parts

-

10k+ parts

-

2,190

$5.550

-

-

-

Continental Prestige Electronics

USA . 1,147 parts In-Stock

1+ parts

$5.580

100+ parts

$4.050

1k+ parts

-

10k+ parts

-

1,147

$5.580

$4.050

-

-

Corohmni

South Africa . 1,150 parts In-Stock

1+ parts

$5.754

100+ parts

-

1k+ parts

-

10k+ parts

-

1,150

$5.754

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 12,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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12,720

-

-

-

-

Argo Parts USA

USA . 4,966 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,966

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$4.566

1k+ parts

$4.427

10k+ parts

$4.333

500

-

$4.566

$4.427

$4.333

Overview

Unlock the power of high-quality Flash Memory with the MT25QU128ABB8E12-0AUT by Micron Technology. Built with precision and expertise, this product offers unparalleled reliability for automotive applications. With a wide operating temperature range and advanced technology, this Flash Memory delivers fast and efficient performance. Trust in Micron Technology to provide you with top-tier memory solutions that will elevate your projects to the next level. Experience the value and benefits of cutting-edge technology with the MT25QU128ABB8E12-0AUT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the flash memory, making it suitable for various applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and reliable data transfers, making the flash memory efficient and high-performing.

Nominal Supply Voltage (Vsup): 1.8V

Low nominal supply voltage reduces power consumption and extends the battery life of devices using this flash memory.

Maximum Clock Frequency (fCLK): 166 MHz

High clock frequency allows for fast data read and write speeds, enhancing the overall performance of the flash memory.

Memory Density: 134217728 bit

High memory density provides ample storage capacity for data-intensive applications, making this flash memory suitable for handling large amounts of data.

Technical Specifications

Flash Memory MT25QU128ABB8E12-0AUT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6 mm

Trade Compliance

MT25QU128ABB8E12-0AUT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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