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MT25QL128ABA8ESF-0AAT

Micron Technology

MT25QL128ABA8ESF-0AAT by Micron Technology

MT25QL128ABA8ESF-0AAT by Micron Technology is a NOR type flash memory with 16Mx8 organization. It operates at a max clock frequency of 133 MHz and has a temperature grade suitable for automotive applications. With a memory density of 134217728 bits, it offers endurance of 100000 write/erase cycles and uses the SPI serial bus type.

Median Price

$5.245

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,880 parts In-Stock

1+ parts

$4.225

100+ parts

-

1k+ parts

-

10k+ parts

-

2,880

$4.225

-

-

-

Farnell

UK . 243 parts In-Stock

1+ parts

$4.380

100+ parts

$2.800

1k+ parts

$2.690

10k+ parts

-

243

$4.380

$2.800

$2.690

-

Element14

Singapore . 243 parts In-Stock

1+ parts

$6.110

100+ parts

$4.830

1k+ parts

$4.580

10k+ parts

-

243

$6.110

$4.830

$4.580

-

Mouser Electronics

USA . 158 parts In-Stock

1+ parts

$6.930

100+ parts

-

1k+ parts

$6.600

10k+ parts

-

158

$6.930

-

$6.600

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Newark

USA . 455 parts In-Stock

1+ parts

$8.770

100+ parts

-

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455

$8.770

-

-

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Verical

USA . 2,880 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$3.640

2,880

-

-

-

$3.640

EBV Elektronik

Germany . 2,880 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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2,880

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 59 parts In-Stock

1+ parts

$4.014

100+ parts

-

1k+ parts

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59

$4.014

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$4.124

100+ parts

-

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10

$4.124

-

-

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NAC Semi

USA . 2,738 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$3.800

2,738

-

-

-

$3.800

Cyclops Electronics Ltd

UK . 1,549 parts In-Stock

1+ parts

-

100+ parts

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1,549

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-

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Vyrian

USA . 1,358 parts In-Stock

1+ parts

-

100+ parts

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1,358

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Greenchips

USA . 450 parts In-Stock

1+ parts

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450

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SIE Connect GmbH - GreenChips

Germany . 450 parts In-Stock

1+ parts

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450

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Netsource Technology, Inc.

USA . 400 parts In-Stock

1+ parts

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100+ parts

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400

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,221 parts In-Stock

1+ parts

$3.090

100+ parts

$3.013

1k+ parts

$2.997

10k+ parts

-

1,221

$3.090

$3.013

$2.997

-

Aztec Data Supply Inc.

USA . 15,651 parts In-Stock

1+ parts

$3.530

100+ parts

-

1k+ parts

-

10k+ parts

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15,651

$3.530

-

-

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Corphita

USA . 238 parts In-Stock

1+ parts

$3.802

100+ parts

-

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238

$3.802

-

-

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Corohmni

South Africa . 350 parts In-Stock

1+ parts

$3.966

100+ parts

-

1k+ parts

-

10k+ parts

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350

$3.966

-

-

-

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$4.085

100+ parts

$3.881

1k+ parts

$3.881

10k+ parts

-

350

$4.085

$3.881

$3.881

-

Argo Parts USA

USA . 4,776 parts In-Stock

1+ parts

$4.124

100+ parts

-

1k+ parts

-

10k+ parts

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4,776

$4.124

-

-

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Continental Prestige Electronics

USA . 281 parts In-Stock

1+ parts

$4.270

100+ parts

$3.050

1k+ parts

-

10k+ parts

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281

$4.270

$3.050

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GreenTree Electronics

Israel . 1,356 parts In-Stock

1+ parts

-

100+ parts

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1,356

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-

-

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,000

-

-

-

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Kepictronics

USA . 806 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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806

-

-

-

-

Overview

Discover the groundbreaking MT25QL128ABA8ESF-0AAT by Micron Technology, the ultimate flash memory solution that guarantees unmatched quality and performance. With its advanced features and cutting-edge technology, this product revolutionizes data storage, offering faster operation, higher endurance, and a superior user experience. Whether you're in automotive electronics, industrial applications, or consumer devices, this flash memory will exceed your expectations. Trust in Micron Technology, a renowned manufacturer known for delivering innovative solutions that set industry standards. Upgrade your storage capabilities today and unlock endless possibilities for your business.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - The use of plastic/epoxy material in the package body makes this flash memory product lightweight and durable, ideal for portable and rugged applications.

Surface Mount

YES - The surface mount capability of this flash memory allows for easy and efficient integration onto circuit boards, reducing assembly time and costs.

No. of Functions

1 - With a single function, this flash memory focuses on efficiently storing and retrieving data, providing a reliable and dedicated solution for memory storage needs.

Screening Level

AEC-Q100 - The AEC-Q100 screening level ensures that this flash memory is designed and manufactured to meet the rigorous quality and reliability requirements for automotive applications.

Package Shape

SQUARE - The square package shape of this flash memory offers versatility in mounting options, allowing for flexible integration within different system designs.

Operating Mode

SYNCHRONOUS - The synchronous operating mode of this flash memory allows for faster data transfer rates and improved performance, making it a suitable choice for demanding applications that require high-speed data access.

Nominal Supply Voltage / Vsup (V)

3 - With a nominal supply voltage of 3V, this flash memory ensures efficient and reliable power management, enhancing overall system stability and performance.

No. of Terminals

16 - The 16 terminals of this flash memory provide a sufficient number of connection points for seamless integration into various electronic systems, ensuring reliable data transfer and communication.

Package Style (Meter)

SMALL OUTLINE - The small outline package style of this flash memory allows for space-efficient integration into compact devices, making it an excellent choice for applications with limited board space.

Maximum Operating Temperature

105 °C - With a maximum operating temperature of 105°C, this flash memory can withstand higher temperatures, enabling its deployment in environments with elevated heat levels.

Organization

16MX8 - The organization of this flash memory as 16 megabits by 8 bits allows for efficient data storage and retrieval, supporting a wide range of data-intensive applications.

Minimum Operating Temperature

40 °C - The minimum operating temperature of -40°C ensures reliable performance even in extremely cold environments, making this flash memory suitable for various industrial and automotive applications.

Terminal Position

DUAL - The dual terminal position provides flexibility in connection options, accommodating different system layouts and allowing for easy integration into existing designs.

Write Protection

HARDWARE/SOFTWARE - The hardware/software write protection feature of this flash memory ensures data security by allowing users to protect sensitive information from accidental modification or deletion.

Maximum Seated Height

2.16 mm - With a maximum seated height of 2.16 mm, this flash memory offers a low-profile design, facilitating integration in slim devices and contributing to overall space optimization.

Maximum Clock Frequency (fCLK)

133 MHz - The maximum clock frequency of 133 MHz allows for fast data transfer and efficient operation, enabling speedy read and write operations in data-intensive applications.

Width

5.29 mm - The width of 5.29 mm ensures a compact footprint for this flash memory, making it suitable for space-constrained applications without compromising storage capacity and performance.

Minimum Supply Voltage (Vsup)

2.7 V - With a minimum supply voltage of 2.7V, this flash memory can operate efficiently within a wide range of voltage levels, providing compatibility and versatility in different power supply environments.

Type

NOR TYPE - Being a NOR type flash memory, this product offers fast random access times and high endurance, making it an optimal choice for applications requiring frequent and swift data access and modification.

Length

5.29 mm - The length of 5.29 mm ensures a compact size for this flash memory, allowing for flexible integration in various system designs without compromising performance or reliability.

Programming Voltage (V)

3 - With a programming voltage of 3V, this flash memory enables efficient and reliable data programming, ensuring accurate and consistent storage of information.

Temperature Grade

AUTOMOTIVE - The automotive temperature grade rating of this flash memory guarantees its ability to operate reliably within the extreme temperature ranges typically encountered in automotive environments.

Technology

CMOS - The use of CMOS technology in this flash memory offers low power consumption, high integration density, and compatibility with a wide range of electronic systems, making it a versatile and efficient choice.

Parallel or Serial

SERIAL - The serial interface of this flash memory simplifies the integration process and allows for efficient communication with a host system, providing seamless data transfer and access.

Terminal Form

GULL WING - The gull-wing terminal form ensures secure and reliable connections, minimizing the risk of signal loss or interruption during operation, making this flash memory an excellent choice for high-performance applications.

Maximum Supply Current

35 mA - With a maximum supply current of 35 mA, this flash memory operates within a low power consumption range, contributing to energy efficiency and extending battery life in portable devices.

Memory Width

8 - The memory width of 8 bits supports efficient data transfer and manipulation, enabling compatibility with various data processing systems and facilitating seamless integration into existing architectures.

Minimum Data Retention Time

20 - The minimum data retention time of 20 years ensures long-term reliability, preserving stored data without degradation over extended periods, making this flash memory suitable for critical applications with stringent data retention requirements.

Terminal Pitch

1.27 mm - The terminal pitch of 1.27 mm provides sufficient spacing between terminals, allowing for easy and accurate placement during assembly, enhancing overall reliability and reducing the risk of short circuits.

No. of Words Code

16M - With a code length of 16M words, this flash memory provides a substantial capacity for storing and managing large amounts of data, making it an excellent choice for data-intensive applications.

Maximum Supply Voltage (Vsup)

3.6 V - With a maximum supply voltage of 3.6V, this flash memory offers compatibility with various power sources, accommodating different system requirements and ensuring reliable operation within specified voltage limits.

Endurance

100000 Write/Erase Cycles - The high endurance capability of 100,000 write/erase cycles ensures the longevity and reliability of this flash memory, making it suitable for applications that require frequent and repetitive data modification.

Serial Bus Type

SPI - With a serial peripheral interface (SPI) bus type, this flash memory provides a simple and efficient means of communication with other devices, enabling seamless integration into versatile system architectures.

Memory Density

134217728 bit - With a memory density of 134,217,728 bits, this flash memory offers substantial storage capacity, accommodating large amounts of data for various applications, including multimedia, industrial, and automotive.

Memory IC Type

FLASH - Being a flash memory IC type, this product offers non-volatile data storage, fast access times, and high reliability, making it a preferred choice for applications that require persistent and robust data storage.

Maximum Standby Current

0.00008 Amp - With a maximum standby current of 0.00008 Amps, this flash memory consumes minimal power in idle states, enhancing energy efficiency and prolonging battery life in low-power devices.

Technical Specifications

Flash Memory MT25QL128ABA8ESF-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

5.29 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

2.16 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00008 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

5.29 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QL128ABA8ESF-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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