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N25Q032A11EF640F

Alliance Memory

N25Q032A11EF640F by Alliance Memory

FLASH; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS; Length: 6 mm;

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Cyclops Electronics Ltd

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Digiode

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Vyrian

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Component Stockers USA

USA . 617 parts In-Stock

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$99.990

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Kepictronics

USA . 13,741 parts In-Stock

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RC Electronics

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A-Z Elektronik GmbH

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Corphita

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Authorized Procurement Solutions

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Futuretech Components

Singapore . 720 parts In-Stock

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ChipstoGo Electronic ltd

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Perfect Parts

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Technical Specifications

Flash Memory N25Q032A11EF640F attributes and parameters. Explore more Flash Memory devices from Alliance Memory

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Maximum Seated Height:

1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

5 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q032A11EF640F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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