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MT25QU512ABB8E12-0SIT/TR

Micron Technology

MT25QU512ABB8E12-0SIT/TR by Micron Technology

MT25QU512ABB8E12-0SIT/TR by Micron Technology is a 64MX8 NOR flash memory with 67108864 words. Operating at 166 MHz, it offers 100000 Write/Erase Cycles endurance and SPI serial bus type for industrial applications. With a package size of 6mm x 8mm and terminal pitch of 1mm, it's suitable for compact devices requiring high-speed data storage.

Median Price

$5.615

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,390 parts In-Stock

1+ parts

$7.180

100+ parts

$6.160

1k+ parts

$5.790

10k+ parts

$4.810

2,390

$7.180

$6.160

$5.790

$4.810

Future Electronics

Canada . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$4.050

2,500

-

-

-

$4.050

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,748 parts In-Stock

1+ parts

$7.334

100+ parts

-

1k+ parts

-

10k+ parts

-

1,748

$7.334

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$8.077

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$8.077

-

-

-

Chip Stock

USA . 20,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,400

-

-

-

-

Vyrian

USA . 6,351 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,351

-

-

-

-

Sensible Micro Corp

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

NAC Semi

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$9.950

2,500

-

-

-

$9.950

IBS Electronics

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$5.265

2,500

-

-

-

$5.265

Bristol Electronics

USA . 15 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,760 parts In-Stock

1+ parts

$5.030

100+ parts

-

1k+ parts

-

10k+ parts

-

1,760

$5.030

-

-

-

Corohmni

South Africa . 1,737 parts In-Stock

1+ parts

$5.597

100+ parts

-

1k+ parts

-

10k+ parts

-

1,737

$5.597

-

-

-

Ampacity Inc.

Singapore . 12,774 parts In-Stock

1+ parts

$6.670

100+ parts

-

1k+ parts

-

10k+ parts

-

12,774

$6.670

-

-

-

Corphita

USA . 634 parts In-Stock

1+ parts

$6.948

100+ parts

-

1k+ parts

-

10k+ parts

-

634

$6.948

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$7.915

100+ parts

-

1k+ parts

$7.599

10k+ parts

-

50

$7.915

-

$7.599

-

Continental Prestige Electronics

USA . 5,728 parts In-Stock

1+ parts

$8.077

100+ parts

-

1k+ parts

-

10k+ parts

$7.915

5,728

$8.077

-

-

$7.915

Semicontronic

India . 38,465 parts In-Stock

1+ parts

$14.520

100+ parts

$14.157

1k+ parts

$14.084

10k+ parts

-

38,465

$14.520

$14.157

$14.084

-

Argo Parts USA

USA . 3,364 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,364

-

-

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Robosynatics

Brazil . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Discover the cutting-edge MT25QU512ABB8E12-0SIT/TR by Micron Technology, a top-tier manufacturer in the flash memory category. This sleek rectangular package with a grid array design offers synchronous operation and a nominal supply voltage of 1.8V, making it ideal for a wide range of industrial applications. With 64MX8 organization and 3-STATE output characteristics, this NOR type memory device ensures high performance and reliability. Experience the value of 100,000 write/erase cycles, serial bus type SPI, and 536,870,912 bit memory density, all packed into a compact form factor. Unlock the potential of your projects with Micron's premium quality and innovative technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory, ensuring long-lasting performance.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal voltage for efficient operation, balancing power consumption and performance.

Maximum Clock Frequency (fCLK): 166 MHz

High clock frequency allows for fast data transfer speeds, enhancing overall system performance.

Memory Density: 536870912 bit

Large memory density allows for storing a significant amount of data, making it suitable for various applications.

Endurance: 100000 Write/Erase Cycles

High endurance ensures durability and reliability, allowing for frequent write and erase operations without degradation.

Serial Bus Type: SPI

Support for Serial Peripheral Interface (SPI) enables easy integration with a wide range of devices and systems.

Technical Specifications

Flash Memory MT25QU512ABB8E12-0SIT/TR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QU512ABB8E12-0SIT/TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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