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PC28F128J3F75B

Micron Technology

PC28F128J3F75B by Micron Technology

Micron Technology's PC28F128J3F75B is a 128Mb NOR Flash Memory with 8MX16 organization, operating at 3V. It features an industrial temperature grade, parallel interface, and 75ns access time. Ideal for applications requiring high-speed data storage in harsh environments.

Median Price

$3.462

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 530 parts In-Stock

1+ parts

$0.604

100+ parts

-

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530

$0.604

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Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$6.320

100+ parts

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1,000

$6.320

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Kruse

Germany . 16,000 parts In-Stock

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16,000

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Kruse Electronics AG

Switzerland . 14,000 parts In-Stock

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14,000

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Vyrian

USA . 8,959 parts In-Stock

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8,959

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Chip Stock

USA . 7,697 parts In-Stock

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7,697

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Astute Electronics Inc

. 4,000 parts In-Stock

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4,000

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Cyclops Electronics Ltd

UK . 2,599 parts In-Stock

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2,599

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J2 Sourcing AB

Sweden . 2,000 parts In-Stock

1+ parts

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2,000

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Avant Electronics Limited

UK . 2,000 parts In-Stock

1+ parts

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2,000

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Digiode

USA . 1,664 parts In-Stock

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1,664

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 18 parts In-Stock

1+ parts

$2.601

100+ parts

-

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18

$2.601

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Aztec Data Supply Inc.

USA . 3,184 parts In-Stock

1+ parts

$2.790

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3,184

$2.790

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Andel Nordic

Denmark . 2,767 parts In-Stock

1+ parts

$4.515

100+ parts

-

1k+ parts

$4.334

10k+ parts

$4.334

2,767

$4.515

-

$4.334

$4.334

AZTECH Wire

Italy . 638 parts In-Stock

1+ parts

$5.883

100+ parts

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638

$5.883

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Continental Prestige Electronics

USA . 3,993 parts In-Stock

1+ parts

$6.320

100+ parts

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10k+ parts

$6.194

3,993

$6.320

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$6.194

Semicontronic

India . 809 parts In-Stock

1+ parts

$8.000

100+ parts

$7.800

1k+ parts

$7.760

10k+ parts

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809

$8.000

$7.800

$7.760

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Ampacity Inc.

Singapore . 835 parts In-Stock

1+ parts

$22.000

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835

$22.000

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Component Stockers USA

USA . 809 parts In-Stock

1+ parts

$68.370

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809

$68.370

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Perfect Parts

USA . 17,920 parts In-Stock

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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7,500

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A-Z Elektronik GmbH

Germany . 6,222 parts In-Stock

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6,222

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RC Electronics

USA . 6,000 parts In-Stock

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Argo Parts USA

USA . 2,302 parts In-Stock

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2,302

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Kepictronics

USA . 2,000 parts In-Stock

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Metaverse IC Inc.

Canada . 1,783 parts In-Stock

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1,783

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Corphita

USA . 1,360 parts In-Stock

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1,360

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Overview

Experience the unparalleled quality of Micron Technology with the PC28F128J3F75B Flash Memory. Offering reliable performance and durability, this product is perfect for a wide range of applications. Whether you're in need of fast data storage or efficient program execution, this flash memory delivers exceptional value and benefits. Trust in Micron's reputation for excellence and upgrade your system today with the PC28F128J3F75B.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and durable, making it suitable for portable devices.

Nominal Supply Voltage / Vsup (V): 3

The consistent supply voltage of 3V ensures stable performance and reliable operation of the flash memory.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operations, increasing efficiency and speed of data transfer.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures that the flash memory can function in a wide range of environmental conditions.

Memory Density: 134217728 bit

The high memory density of 134217728 bits allows for storing a large amount of data in a compact form factor, making it ideal for storing multimedia files.

Technical Specifications

Flash Memory PC28F128J3F75B attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

75 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

128

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

4/8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00012 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

PC28F128J3F75B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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