Loading...

PC28F640P30BF65B

Micron Technology

PC28F640P30BF65B by Micron Technology

PC28F640P30BF65B by Micron Technology is a 64-terminal, 4MX16 NOR type flash memory with a rectangular package and a plastic/epoxy body material. It operates at a nominal voltage of 1.8V and has a max operating temperature of 85°C. This flash memory is commonly used in industrial applications that require high-density storage and fast access times.

Median Price

$7.510

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 297 parts In-Stock

1+ parts

$9.520

100+ parts

$8.180

1k+ parts

$7.520

10k+ parts

$7.320

297

$9.520

$8.180

$7.520

$7.320

DigiKey

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$5.500

6,000

-

-

-

$5.500

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 2,000 parts In-Stock

1+ parts

$1.200

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

$1.200

-

-

-

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$1.750

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$1.750

-

-

-

Digiode

USA . 1,087 parts In-Stock

1+ parts

$7.581

100+ parts

-

1k+ parts

-

10k+ parts

-

1,087

$7.581

-

-

-

Kruse

Germany . 106,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

106,000

-

-

-

-

ARCO, INC.

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

96,000

-

-

-

-

Kruse Electronics AG

Switzerland . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90,000

-

-

-

-

Chip Stock

USA . 16,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,900

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 1,943 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,943

-

-

-

-

Vyrian

USA . 1,189 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,189

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,118 parts In-Stock

1+ parts

$1.750

100+ parts

-

1k+ parts

-

10k+ parts

$1.715

5,118

$1.750

-

-

$1.715

Argo Parts USA

USA . 1,964 parts In-Stock

1+ parts

$1.750

100+ parts

-

1k+ parts

-

10k+ parts

-

1,964

$1.750

-

-

-

Bastille Electronics

Australia . 200 parts In-Stock

1+ parts

$1.750

100+ parts

$1.662

1k+ parts

$1.579

10k+ parts

$1.558

200

$1.750

$1.662

$1.579

$1.558

Ampacity Inc.

Singapore . 1,296 parts In-Stock

1+ parts

$6.660

100+ parts

-

1k+ parts

-

10k+ parts

-

1,296

$6.660

-

-

-

Semicontronic

India . 1,251 parts In-Stock

1+ parts

$6.660

100+ parts

$6.494

1k+ parts

$6.460

10k+ parts

-

1,251

$6.660

$6.494

$6.460

-

Corphita

USA . 2,200 parts In-Stock

1+ parts

$7.182

100+ parts

-

1k+ parts

-

10k+ parts

-

2,200

$7.182

-

-

-

Component Stockers USA

USA . 3,046 parts In-Stock

1+ parts

$7.860

100+ parts

$6.330

1k+ parts

$5.640

10k+ parts

-

3,046

$7.860

$6.330

$5.640

-

RC Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Authorized Procurement Solutions

USA . 1,943 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,943

-

-

-

-

Overview

Experience the next level of performance with the PC28F640P30BF65B by Micron Technology. As a leader in flash memory technology, Micron brings you an exceptional product that combines quality, reliability, and versatility. This flash memory device is perfect for various applications, providing seamless data storage and retrieval. With its synchronous operating mode and common flash interface, you can expect faster access times and enhanced efficiency. Whether you're a tech enthusiast or a professional in need of reliable storage solutions, this product offers unbeatable value, benefits, and advantages. Upgrade your digital experience today with Micron Technology's PC28F640P30BF65B.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount: YES

The surface mount feature allows for easy installation and integration into various electronic devices, making it convenient for manufacturers and users alike.

No. of Functions: 1

With a single function, this flash memory simplifies the design and implementation process, saving time and effort.

Package Shape: RECTANGULAR

The rectangular package shape ensures compatibility with standard mounting techniques, enhancing compatibility and ease of use in different applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode enables faster and more efficient data transfer, enhancing overall performance and responsiveness.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V minimizes power consumption, making it suitable for battery-powered devices and reducing energy costs.

Power Supplies (V): 1.8,1.8/3.3

The flexible power supply options allow for compatibility with different voltage systems, making it adaptable to various electronic configurations.

No. of Terminals: 64

The 64 terminals provide sufficient connectivity options and ensure secure and reliable connections, contributing to the stability and performance of the product.

Package Style (Meter): GRID ARRAY, THIN PROFILE

The grid array package style with a thin profile offers improved heat dissipation and space-saving characteristics, making it ideal for compact designs and high-temperature environments.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance of 85°C allows for reliable performance even in demanding conditions, contributing to the product's durability and versatility.

Organization: 4MX16

With an organization of 4MX16, this flash memory provides a large capacity for storing data, offering ample storage space for complex applications and data-intensive tasks.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable functionality even in extreme cold environments, expanding the range of possible applications.

No. of Sectors/Size: 4,63

With 4 sectors and a size of 63, this flash memory supports efficient management of data storage and retrieval, optimizing performance and facilitating data organization.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and improves mechanical stability during installation, ensuring secure connections and increasing overall product reliability.

Maximum Seated Height: 1.2 mm

With a maximum seated height of 1.2mm, this flash memory offers a compact form factor, making it suitable for space-constrained applications and enabling flexible design options.

Width: 10 mm

The compact width of 10mm allows for easy integration in tight spaces or densely packed electronic assemblies, enhancing versatility and adaptability in various applications.

Minimum Supply Voltage (Vsup): 1.7 V

The low minimum supply voltage requirement of 1.7V enables compatibility with a wide range of power sources, expanding the product's versatility.

Page Size (words): 8

The small page size of 8 words allows for efficient read and write operations, improving data transfer speed and overall system performance.

Type: NOR TYPE

The NOR type flash memory offers fast read times and random access capabilities, making it suitable for applications that require frequent data access and real-time performance.

Common Flash Interface: YES

The presence of a common flash interface improves compatibility and simplifies integration with other components and systems, ensuring seamless interoperability.

Length: 13 mm

With a length of 13mm, this flash memory module provides a compact footprint, making it suitable for space-constrained designs and enhancing flexibility during installation.

Programming Voltage (V): 1.8

The programming voltage of 1.8V ensures efficient and reliable programming operations, enhancing the accuracy and reliability of data storage and retrieval.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this flash memory operates reliably in harsh environments, withstanding wide temperature ranges and providing rugged durability.

Technology: CMOS

Utilizing CMOS technology, this flash memory offers low power consumption and high-speed performance, providing an optimal balance between efficiency and functionality.

Parallel or Serial: PARALLEL

The parallel data transfer mode enables high-speed data transmission, making it ideal for applications that require fast data access and processing.

Terminal Form: BALL

The ball terminal form ensures secure and reliable connections, making it resistant to mechanical stress and ideal for applications that require prolonged and repeated use.

Sector Size (Words): 16K,64K

With sector sizes of 16K and 64K, this flash memory allows for optimized data management and efficient storage allocation, enhancing overall system performance.

Maximum Supply Current: 50 mA

The maximum supply current of 50mA ensures efficient power usage, reducing energy consumption and enhancing the product's overall efficiency.

No. of Words: 4194304 words

With a large number of words (4,194,304), this flash memory provides ample storage capacity for extensive data requirements, accommodating diverse application needs.

Memory Width: 16

The memory width of 16 bits allows for faster data retrieval and processing, improving overall system performance and efficiency.

Terminal Pitch: 1 mm

With a terminal pitch of 1mm, this flash memory allows for easy and reliable connections, ensuring signal integrity and facilitating straightforward integration.

No. of Words Code: 4M

The 4M-word code provides a high level of addressability, accommodating a wide range of memory allocation and enabling efficient data management.

Command User Interface: YES

The presence of a command user interface simplifies the interaction and control of the flash memory, enhancing usability and facilitating seamless integration.

Maximum Supply Voltage (Vsup): 2 V

The maximum supply voltage of 2V ensures compatibility with various power sources and allows for a wider operating range, expanding the product's versatility.

Boot Block: BOTTOM

The bottom boot block configuration simplifies the boot-up process and enhances system reliability, ensuring seamless startup and reducing the risk of data corruption.

Memory Density: 67108864 bit

With a high memory density of 67,108,864 bits, this flash memory provides ample storage capacity for large data volumes and complex applications, accommodating diverse needs.

Memory IC Type: FLASH

As a flash memory IC, this product offers non-volatile and rewritable storage capabilities, making it suitable for applications that require frequent data updates and retention.

Maximum Standby Current: 0.000055 Amp

The low maximum standby current of 0.000055 Amp minimizes power consumption during idle periods, improving energy efficiency and extending battery life.

Maximum Access Time: 65 ns

With a fast maximum access time of 65ns, this flash memory ensures quick and efficient data retrieval, enhancing overall system responsiveness and performance.

Technical Specifications

Flash Memory PC28F640P30BF65B attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

65 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,63

No. of Terminals:

64

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000055 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

PC28F640P30BF65B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20