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PC28F00AP33TFA

Micron Technology

PC28F00AP33TFA by Micron Technology

Micron Technology's PC28F00AP33TFA is a 64MX16 Flash Memory with 67108864 words capacity. Operating at 3V, it offers synchronous mode and 95ns access time. Ideal for industrial applications requiring high memory density and fast data retrieval in a compact GRID ARRAY package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,739 parts In-Stock

1+ parts

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5,739

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Chip Stock

USA . 4,587 parts In-Stock

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4,587

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Digiode

USA . 1,381 parts In-Stock

1+ parts

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1,381

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

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450

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 259 parts In-Stock

1+ parts

$5.078

100+ parts

-

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259

$5.078

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Aztec Data Supply Inc.

USA . 384 parts In-Stock

1+ parts

$5.842

100+ parts

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384

$5.842

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AZTECH Wire

Italy . 420 parts In-Stock

1+ parts

$13.370

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420

$13.370

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Ampacity Inc.

Singapore . 1,167 parts In-Stock

1+ parts

$26.000

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1,167

$26.000

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Perfect Parts

USA . 5,385 parts In-Stock

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5,385

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Continental Prestige Electronics

USA . 1,649 parts In-Stock

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1,649

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Corphita

USA . 637 parts In-Stock

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637

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Argo Parts USA

USA . 350 parts In-Stock

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350

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Aranea Global

USA . 50 parts In-Stock

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50

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Speed Components Ltd (Excess)

Israel . 1 parts In-Stock

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1

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Overview

Unlock limitless possibilities with the PC28F00AP33TFA by Micron Technology. This Flash Memory device offers unparalleled quality and reliability, making it the perfect choice for a wide range of applications. With its cutting-edge technology and innovative design, this product provides customers with exceptional value and benefits. Experience faster performance, increased storage capacity, and seamless operation with the PC28F00AP33TFA. Elevate your digital experience today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory components, ensuring a longer lifespan for the product.

Surface Mount: YES

Enables easy and efficient installation of the flash memory onto circuit boards, saving time and effort during production.

Operating Mode: SYNCHRONOUS

Allows for faster and more synchronized data transfer, enhancing overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 3

Optimal supply voltage that ensures stable and reliable operation of the flash memory.

No. of Terminals: 64

Provides sufficient connectivity options for integration into various systems and devices.

Maximum Operating Temperature: 85 °C

Supports reliable operation in high-temperature environments, increasing the versatility of the flash memory.

Organization: 64MX16

Offers a large memory capacity and efficient data organization, suitable for storing a significant amount of data.

Minimum Operating Temperature: -40 °C

Ensures reliable performance even in extreme cold conditions, making the flash memory suitable for a wide range of applications.

Terminal Finish: TIN SILVER COPPER

Provides corrosion resistance and reliable electrical contact for the terminals, enhancing the longevity of the flash memory.

Memory IC Type: FLASH

Utilizes flash memory technology, known for its speed, durability, and non-volatile storage capabilities.

Technical Specifications

Flash Memory PC28F00AP33TFA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

95 ns

Additional Features:

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

Boot Block:

TOP

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

PC28F00AP33TFA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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