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PC28F512P33BFD

Micron Technology

PC28F512P33BFD by Micron Technology

Micron Technology's PC28F512P33BFD is a 32MX16 flash memory with 33554432 words. It operates at 3V, has a memory width of 16 bits, and offers fast access time of 95 ns. Ideal for industrial applications requiring high-density memory in a compact GRID ARRAY package.

Median Price

$10.180

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 94 parts In-Stock

1+ parts

$6.409

100+ parts

-

1k+ parts

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94

$6.409

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EXC GmbH

Germany . 811 parts In-Stock

1+ parts

$13.952

100+ parts

-

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811

$13.952

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Chip Stock

USA . 9,277 parts In-Stock

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9,277

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

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4,000

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Vyrian

USA . 3,646 parts In-Stock

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3,646

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Digiode

USA . 1,502 parts In-Stock

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1,502

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Component Sense

UK . 554 parts In-Stock

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554

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Bristol Electronics

USA . 4 parts In-Stock

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4

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Atlantic Semiconductor

USA . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 106 parts In-Stock

1+ parts

$3.302

100+ parts

-

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106

$3.302

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Aztec Data Supply Inc.

USA . 4,075 parts In-Stock

1+ parts

$4.600

100+ parts

-

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4,075

$4.600

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$6.281

100+ parts

-

1k+ parts

$6.030

10k+ parts

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1,000

$6.281

-

$6.030

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Continental Prestige Electronics

USA . 5,915 parts In-Stock

1+ parts

$6.409

100+ parts

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$6.281

5,915

$6.409

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-

$6.281

AZTECH Wire

Italy . 629 parts In-Stock

1+ parts

$11.970

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629

$11.970

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Component Stockers USA

USA . 341 parts In-Stock

1+ parts

$15.160

100+ parts

$14.410

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341

$15.160

$14.410

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Ampacity Inc.

Singapore . 1,294 parts In-Stock

1+ parts

$28.000

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1,294

$28.000

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Perfect Parts

USA . 26,344 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,837 parts In-Stock

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Microchip USA

USA . 5,153 parts In-Stock

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5,153

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Sternenhof Electronics (Excess)

Switzerland . 4,812 parts In-Stock

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4,812

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Argo Parts USA

USA . 4,029 parts In-Stock

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4,029

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RC Electronics

USA . 3,268 parts In-Stock

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3,268

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Kepictronics

USA . 1,800 parts In-Stock

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1,800

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Futuretech Components

Singapore . 1,000 parts In-Stock

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1,000

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Corphita

USA . 53 parts In-Stock

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53

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Overview

Experience lightning-fast data storage and retrieval with the Micron Technology PC28F512P33BFD Flash Memory. This cutting-edge product boasts top-quality manufacturing by Micron Technology, a leader in memory solutions. Ideal for industrial applications, this flash memory offers reliable performance in a compact package. Unlock the benefits of faster access times, higher memory density, and industrial-grade durability. Upgrade your system with the PC28F512P33BFD and enjoy seamless data management like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material which provides protection to the internal components while keeping the overall weight of the product low.

Nominal Supply Voltage / Vsup (V): 3

Optimal supply voltage for efficient performance and power consumption.

Operating Mode: SYNCHRONOUS

Synchronous operation offers faster data transfer speeds and better overall system performance.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for reliable operation in various environmental conditions.

Maximum Seated Height: 1.2 mm

Low profile design enables space-saving installation in compact devices.

Memory Density: 536870912 bit

High memory density provides ample storage capacity for storing large amounts of data.

Maximum Access Time: 95 ns

Fast access time ensures quick retrieval of data for efficient performance.

Technical Specifications

Flash Memory PC28F512P33BFD attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

95 ns

Additional Features:

BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

Boot Block:

BOTTOM

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

PC28F512P33BFD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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