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JS28F00AP30EFA

Micron Technology

JS28F00AP30EFA by Micron Technology

Micron Technology's JS28F00AP30EFA is a 64MX16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. It features synchronous mode, 1K sectors, and a page size of 16 words. Ideal for industrial applications requiring fast access times and high memory density.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 18,700 parts In-Stock

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18,700

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Vyrian

USA . 1,969 parts In-Stock

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1,969

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Digiode

USA . 1,518 parts In-Stock

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1,518

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Nova Conductors

Japan . 79 parts In-Stock

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79

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,667 parts In-Stock

1+ parts

$2.698

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1,667

$2.698

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Corohmni

South Africa . 245 parts In-Stock

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$4.169

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245

$4.169

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AZTECH Wire

Italy . 645 parts In-Stock

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$11.492

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645

$11.492

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Ampacity Inc.

Singapore . 1,188 parts In-Stock

1+ parts

$26.000

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1,188

$26.000

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Argo Parts USA

USA . 3,675 parts In-Stock

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3,675

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Continental Prestige Electronics

USA . 1,788 parts In-Stock

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1,788

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Corphita

USA . 1,572 parts In-Stock

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1,572

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Advanced Electronics

New Zealand . 550 parts In-Stock

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550

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Kepictronics

USA . 283 parts In-Stock

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283

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Microchip USA

USA . 144 parts In-Stock

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144

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Overview

Enhance your electronic devices with the JS28F00AP30EFA from Micron Technology, a leading manufacturer in the industry. This high-quality flash memory offers unparalleled reliability and performance, making it ideal for a wide range of applications. With a compact design and advanced technology, this product provides customers with exceptional value, benefits, and advantages. Upgrade your devices today with Micron's innovative JS28F00AP30EFA for a seamless user experience like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components of the flash memory, making it a reliable choice for long-term use.

Surface Mount: YES

Surface mount capability enables easy and efficient installation on printed circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: SYNCHRONOUS

Synchronous operation offers faster data transfer speeds and improved overall performance compared to asynchronous operation, making this flash memory a high-speed solution.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal supply voltage of 1.8V helps in reducing power consumption and heat generation, leading to energy efficiency and longer battery life.

No. of Words: 67108864 words

With a high number of words, this flash memory offers ample storage capacity for storing a large amount of data, making it suitable for various applications.

Maximum Access Time: 110 ns

The fast maximum access time ensures quick read and write operations, improving the overall responsiveness and speed of the flash memory.

Technical Specifications

Flash Memory JS28F00AP30EFA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

110 ns

Additional Features:

SYMMETRICAL BLOCKS

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1K

No. of Terminals:

56

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.00024 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F00AP30EFA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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