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JS28F256P30TFE

Micron Technology

JS28F256P30TFE by Micron Technology

Micron Technology's JS28F256P30TFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. It features synchronous operation, small outline package, and parallel interface. Ideal for industrial applications requiring fast access times and high memory density.

Median Price

$10.000

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 79 parts In-Stock

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Vyrian

USA . 817 parts In-Stock

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$10.000

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Chip Stock

USA . 35,588 parts In-Stock

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Cyclops Electronics Ltd

UK . 11,576 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Digiode

USA . 2,049 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 1,131 parts In-Stock

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Greenchips

USA . 576 parts In-Stock

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576

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Sternenhof Electronics

Switzerland . 189 parts In-Stock

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Sensible Micro Corp

USA . 100 parts In-Stock

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Bristol Electronics

USA . 75 parts In-Stock

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Atlantic Semiconductor

USA . 75 parts In-Stock

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Vectronix, Inc

USA . 50 parts In-Stock

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Nova Conductors

Japan . 40 parts In-Stock

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40

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Prism Electronics

USA . 30 parts In-Stock

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Ampacity Inc.

Singapore . 79 parts In-Stock

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$11.000

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$11.000

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S.R.D Solutions

India . 30,100 parts In-Stock

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A-Z Elektronik GmbH

Germany . 8,331 parts In-Stock

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RC Electronics

USA . 6,846 parts In-Stock

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$4.590

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$4.190

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$4.060

6,846

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$4.590

$4.190

$4.060

Perfect Parts

USA . 6,821 parts In-Stock

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Kepictronics

USA . 6,432 parts In-Stock

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Argo Parts USA

USA . 2,270 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,958 parts In-Stock

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Futuretech Components

Singapore . 862 parts In-Stock

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Continental Prestige Electronics

USA . 501 parts In-Stock

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Authorized Procurement Solutions

USA . 77 parts In-Stock

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Corphita

USA . 51 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the Micron Technology JS28F256P30TFE Flash Memory. This innovative product offers unparalleled quality and reliability, backed by the trusted name of Micron Technology. Ideal for a wide range of applications, this flash memory provides seamless operation in an industrial setting, ensuring peak performance and efficiency. Experience the value and benefits that this product brings, from its small outline to its high memory density, making it a must-have for any customer looking for top-notch memory solutions. Elevate your projects with the JS28F256P30TFE and enjoy the advantages it offers in terms of speed, stability, and overall performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the flash memory, ensuring it can withstand physical stress.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for fast and efficient data transfer, enhancing the overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage of 1.8V helps in reducing power consumption and improving energy efficiency.

No. of Sectors/Size: 4,255

Having a large number of sectors and sizes allows for efficient storage and organization of data within the flash memory.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory can function reliably even in demanding environmental conditions.

Technical Specifications

Flash Memory JS28F256P30TFE attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Additional Features:

IT ALSO HAVE ASYNCHRONOUS OPERATING MODE

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,255

No. of Terminals:

56

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.025 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00021 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F256P30TFE Memory ICs trade compliance attributes, and parameters.

ECCN

3A991

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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