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JS28F00AM29EWHA

Micron Technology

JS28F00AM29EWHA by Micron Technology

Micron Technology's JS28F00AM29EWHA is a NOR type Flash Memory with 64MX16 organization, operating at 3V. It features a small outline package, industrial temperature grade, and asynchronous mode. Ideal for applications requiring fast access times and high memory density.

Median Price

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Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Vyrian

USA . 8,774 parts In-Stock

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Chip Stock

USA . 4,642 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Digiode

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Semi Source

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Cyclops Electronics Ltd

UK . 70 parts In-Stock

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70

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Connector Distribution Corp

USA . 46 parts In-Stock

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46

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Right Parts Inc.

USA . 46 parts In-Stock

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46

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Quantum Digital Technology

USA . 20 parts In-Stock

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20

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Speed Components Ltd

Israel . 10 parts In-Stock

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10

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Nova Conductors

Japan . 10 parts In-Stock

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Prism Electronics

USA . 9 parts In-Stock

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Bristol Electronics

USA . 8 parts In-Stock

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Atlantic Semiconductor

USA . 8 parts In-Stock

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Contempo Components LLC

USA . 5 parts In-Stock

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Carlin Systems, Inc.

USA . 5 parts In-Stock

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Distributors (Availability)

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Andel Nordic

Denmark . 1,200 parts In-Stock

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$3.170

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$3.043

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$3.043

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$3.170

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$3.043

$3.043

Ampacity Inc.

Singapore . 1,271 parts In-Stock

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$14.000

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AZTECH Wire

Italy . 308 parts In-Stock

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$20.630

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Perfect Parts

USA . 13,745 parts In-Stock

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Kepictronics

USA . 4,933 parts In-Stock

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Metaverse IC Inc.

Canada . 3,997 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,949 parts In-Stock

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Argo Parts USA

USA . 3,738 parts In-Stock

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Continental Prestige Electronics

USA . 3,491 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,011 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 2,165 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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Microchip USA

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iodParts Technologies Inc.

India . 5 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with Micron Technology's JS28F00AM29EWHA Flash Memory. Designed for industrial-grade applications, this NOR type memory offers unparalleled reliability and performance. With a memory density of 1073741824 bit and a fast access time of 110 ns, this flash memory is perfect for a wide range of high-demand applications. Experience seamless operation and maximum efficiency with Micron Technology's top-of-the-line product. Elevate your projects to the next level with the JS28F00AM29EWHA Flash Memory.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the flash memory, ensuring it can withstand varying environmental conditions.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes this flash memory energy-efficient and suitable for a variety of applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can function reliably even in high-temperature environments.

Technology: CMOS

The CMOS technology used in this flash memory allows for low power consumption and high speed operation, enhancing overall performance.

No. of Words: 67108864 words

With a large number of words, this flash memory offers ample storage capacity for data-intensive applications.

Technical Specifications

Flash Memory JS28F00AM29EWHA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

110 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e4

Length:

18.4 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1K

No. of Terminals:

56

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

16/32

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00024 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F00AM29EWHA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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