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IS21ES04G-JQLI

Integrated Silicon Solution

IS21ES04G-JQLI by Integrated Silicon Solution

IS21ES04G-JQLI by Integrated Silicon Solution is a 4GX8 flash memory with 34359738368 bit density. Operating at 3.3V, it offers synchronous mode and industrial temperature grade suitability. With a package size of 18mm x 14mm, this low-profile grid array memory chip is ideal for high-performance applications requiring parallel data processing.

Median Price

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Lifecycle Status

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Vyrian

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Elcom Components

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Nova Conductors

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PC Components Company LLC

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Bristol Electronics

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Inventory MP

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Aztec Data Supply Inc.

USA . 4,983 parts In-Stock

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Corohmni

South Africa . 16 parts In-Stock

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AZTECH Wire

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Argo Parts USA

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Continental Prestige Electronics

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Lucentia Tech

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Overview

Unlock the power of cutting-edge technology with the IS21ES04G-JQLI by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-quality Flash Memory solutions that guarantee reliability and performance. Whether you're looking to enhance data storage in industrial applications or streamline communication systems, this product offers unmatched value and benefits. Trust ISS to provide innovative solutions that meet your needs and exceed your expectations. Experience the difference with ISS Flash Memory today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that offers good protection to the internal components of the flash memory.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal supply voltage for efficient and stable performance of the flash memory.

Maximum Operating Temperature: 85 °C

Wide temperature range allows the flash memory to operate reliably in various environmental conditions.

No. of Terminals: 100

Sufficient number of terminals for easy connectivity and integration in electronic systems.

Memory Density: 34359738368 bit

High memory density allows the flash memory to store a large amount of data efficiently.

Technical Specifications

Flash Memory IS21ES04G-JQLI attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

JESD-30 Code:

R-PBGA-B100

JESD-609 Code:

e1

Length:

18 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3.3

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

14 mm

Trade Compliance

IS21ES04G-JQLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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