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IS21ES32G-JCLI

Integrated Silicon Solution

IS21ES32G-JCLI by Integrated Silicon Solution

IS21ES32G-JCLI by Integrated Silicon Solution is a 32GX8 MLC NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a very thin profile grid array package suitable for industrial applications requiring high memory density and a wide operating temperature range from -40°C to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,891 parts In-Stock

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Chip Stock

USA . 429 parts In-Stock

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429

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Nova Conductors

Japan . 73 parts In-Stock

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73

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Corohmni

South Africa . 3 parts In-Stock

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$2.195

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3

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Aztec Data Supply Inc.

USA . 694 parts In-Stock

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$3.200

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$3.200

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AZTECH Wire

Italy . 514 parts In-Stock

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$19.718

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S.R.D Solutions

India . 8,000 parts In-Stock

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Continental Prestige Electronics

USA . 6,312 parts In-Stock

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Argo Parts USA

USA . 4,850 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unlock the power of reliable and high-quality flash memory with the IS21ES32G-JCLI by Integrated Silicon Solution. Built by a trusted manufacturer, this flash memory device offers unparalleled performance and durability for a wide range of applications. Whether you're a tech enthusiast or a professional in need of dependable memory solutions, this product delivers exceptional value and benefits. Trust in Integrated Silicon Solution to provide top-notch technology that enhances your experience and boosts productivity. Choose the IS21ES32G-JCLI for a seamless and efficient memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to external elements, making the product long-lasting.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and synchronized data transfer, enhancing performance.

Nominal Supply Voltage / Vsup (V): 3.3

Stable nominal supply voltage ensures reliable operation and compatibility with other components.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency enables fast data access and processing speed, making the product suitable for high-performance applications.

Memory IC Type: FLASH

Flash memory technology offers non-volatile storage, low power consumption, and high-speed read/write capabilities, making it ideal for data storage and retrieval.

Technical Specifications

Flash Memory IS21ES32G-JCLI attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

200 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

153

No. of Words:

34359738368 words

No. of Words Code:

32G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32GX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3.3

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Toggle Bit:

NO

Type:

MLC NAND TYPE

Width:

11.5 mm

Trade Compliance

IS21ES32G-JCLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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