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IS21ES16G-JCLI

Integrated Silicon Solution

IS21ES16G-JCLI by Integrated Silicon Solution

IS21ES16G-JCLI by Integrated Silicon Solution is a 16GX8 Flash Memory with synchronous operation and a max clock frequency of 200 MHz. It has a memory density of 137438953472 bit and is suitable for industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,212 parts In-Stock

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GLYN GmbH & Co. KG

Germany . 12 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 681 parts In-Stock

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$16.967

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Continental Prestige Electronics

USA . 3,779 parts In-Stock

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Argo Parts USA

USA . 2,050 parts In-Stock

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Authorized Procurement Solutions

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Aranea Global

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Overview

Experience the cutting-edge technology of the IS21ES16G-JCLI Flash Memory by Integrated Silicon Solution. As a renowned manufacturer in the industry, Integrated Silicon Solution guarantees the highest quality and reliability for all their products. This flash memory is perfect for various applications, providing efficient storage solutions with its impressive 16GX8 organization. With a maximum clock frequency of 200 MHz and a wide operating temperature range of -40 to 85°C, this flash memory delivers exceptional performance in even the most demanding environments. Say goodbye to storage limitations and unlock endless possibilities with the IS21ES16G-JCLI.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides durability and flexibility, making the product robust and resistant to damage.

Surface Mount: YES

Surface mount technology allows for easy installation on circuit boards, saving space and improving reliability.

Nominal Supply Voltage (Vsup): 3.3V

Operates at a standard voltage level, ensuring compatibility with most systems and reducing the risk of overloading.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, making it suitable for industrial applications where heat may be a concern.

Organization: 16GX8

High organization capacity allows for efficient storage and retrieval of data, making the product suitable for large-scale memory requirements.

Memory Density: 137438953472 bit

High memory density enables storage of large amounts of data in a compact space, making the product ideal for high-performance applications.

Technical Specifications

Flash Memory IS21ES16G-JCLI attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

200 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

153

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3.3

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Toggle Bit:

NO

Type:

MLC NAND TYPE

Width:

11.5 mm

Trade Compliance

IS21ES16G-JCLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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