Loading...

STMicroelectronics Flash Memory 76

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
M50FLW080BNB5G by STMicroelectronics

M50FLW080BNB5G

STMicroelectronics

M50FLW080BNB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode, ideal for embedded applications. It operates at 3.3V, features a max access time of 11 ns, and supports temperatures from -20 °C to 85 °C. Its compact SOIC package ensures efficient space utilization in designs.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FW080K5G by STMicroelectronics

M50FW080K5G

STMicroelectronics

M50FW080K5G from STMicroelectronics is a NOR flash memory with 1M words capacity, operating at 3.3V. It features a fast access time of 11 ns and supports asynchronous mode. Ideal for embedded applications, it operates b/w -20 °C to 85 °C in a compact chip carrier package.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

16

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FW080N5G by STMicroelectronics

M50FW080N5G

STMicroelectronics

M50FW080N5G from STMicroelectronics is a 1Mx8 NOR Flash memory with a 3.3V supply, ideal for asynchronous applications. It features a max access time of 11 ns and operates b/w -20 °C to 85 °C. This compact SOIC package is perfect for space-constrained designs.

11 ns

YES

NO

R-PDSO-G40

e6

18.4 mm

8388608 bit

FLASH

8

3

1

16

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN BISMUTH

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M50FW080NB5G by STMicroelectronics

M50FW080NB5G

STMicroelectronics

M50FW080NB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a compact SOIC package, operating at 3.3V. It features fast access times of 11 ns and supports asynchronous operation, making it ideal for embedded applications. With a wide temp range (-20 °C to 85 °C), it's perfect for diverse environments.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

16

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FW016N5G by STMicroelectronics

M50FW016N5G

STMicroelectronics

M50FW016N5G from STMicroelectronics is a 16Mb NOR Flash memory with a synchronous operating mode and a max access time of 11 ns. It operates at 3.0-3.6V, features a compact SOIC package, and is ideal for embedded applications requiring reliable data storage. Its dual terminal design ensures efficient surface mounting in space-constrained environments.

11 ns

R-PDSO-G40

e6

18.4 mm

16777216 bit

FLASH

8

3

1

40

2097152 words

2M

SYNCHRONOUS

85 Cel

-20 Cel

2MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3

Not Qualified

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN BISMUTH

GULL WING

.5 mm

DUAL

NOR TYPE

10 mm

M50FW040K5G by STMicroelectronics

M50FW040K5G

STMicroelectronics

M50FW040K5G from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring reliable data storage.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

YES

3.56 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FW040N5G by STMicroelectronics

M50FW040N5G

STMicroelectronics

M50FW040N5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a compact SOIC package, ideal for space-constrained applications. This versatile memory supports dual terminal positioning and operates b/w -20 °C to 85 °C.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

10 mm

M50FW040NB5G by STMicroelectronics

M50FW040NB5G

STMicroelectronics

M50FW040NB5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a compact SOIC-32 package, ideal for space-constrained applications. With a temp range of -20 °C to 85 °C, it's perfect for industrial use.

11 ns

YES

NO

R-PDSO-G32

e3/e6

14 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50LPW116N5G by STMicroelectronics

M50LPW116N5G

STMicroelectronics

M50LPW116N5G from STMicroelectronics is a 2M x 8 NOR Flash memory with a max access time of 11 ns and operates at a nominal voltage of 3.3V. It features a compact SOIC package, ideal for space-constrained applications. This synchronous device supports dual terminals and offers robust performance in various electronic systems.

11 ns

TOP

YES

NO

R-PDSO-G40

e3

18.4 mm

16777216 bit

FLASH

8

1

1,2,1,30,16

40

2097152 words

2M

SYNCHRONOUS

85 Cel

-20 Cel

2MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,32K,64K,4K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M29F010B70K6E by STMicroelectronics

M29F010B70K6E

STMicroelectronics

M29F010B70K6E from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and 70 ns max access time. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

250

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

M29F010B45K6E by STMicroelectronics

M29F010B45K6E

STMicroelectronics

M29F010B45K6E from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 45 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

250

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

M29F010B70N6E by STMicroelectronics

M29F010B70N6E

STMicroelectronics

M29F010B70N6E from STMicroelectronics is a NOR flash memory with 128K x 8 organization, operating at 5V. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. Ideal for industrial applications requiring reliable data storage in compact designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29F200BB50N3 by STMicroelectronics

M29F200BB50N3

STMicroelectronics

M29F200BB50N3 from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, ideal for automotive applications. It features a max access time of 50 ns, supports up to 100K write/erase cycles, and operates in asynchronous mode. Its compact SOIC package ensures efficient surface mounting.

50 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

125 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F200BB70N6E by STMicroelectronics

M29F200BB70N6E

STMicroelectronics

M29F200BB70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F200BT70N6E by STMicroelectronics

M29F200BT70N6E

STMicroelectronics

M29F200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for industrial applications. With dual terminals and a wide temp range (-40 °C to 85 °C), it ensures reliable performance in demanding environments.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F040B45K6E by STMicroelectronics

M29F040B45K6E

STMicroelectronics

M29F040B45K6E from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features an asynchronous operating mode, max access time of 45 ns, and supports up to 100k write/erase cycles. This compact chip carrier design ensures reliable performance in harsh environments.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F040B70N6E by STMicroelectronics

M29F040B70N6E

STMicroelectronics

M29F040B70N6E from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features an asynchronous mode, operates b/w -40 °C to 85 °C, and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29W040B55K6E by STMicroelectronics

M29W040B55K6E

STMicroelectronics

M29W040B55K6E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, ideal for industrial applications. It features an asynchronous mode, 100k write/erase cycles, and operates b/w -40 °C to 85 °C. Its compact design ensures efficient surface mounting in various devices.

55 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W040B70N6E by STMicroelectronics

M29W040B70N6E

STMicroelectronics

M29W040B70N6E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, ideal for industrial applications. It features an asynchronous operating mode, 70 ns max access time, and supports up to 100K write/erase cycles. Its compact SOIC package ensures efficient space utilization in designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29W040B90K1E by STMicroelectronics

M29W040B90K1E

STMicroelectronics

M29W040B90K1E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100,000 write/erase cycles, making it ideal for embedded applications. With its compact chip carrier design and commercial temperature grade, it's perfect for space-constrained devices.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

3

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W200BB70N6E by STMicroelectronics

M29W200BB70N6E

STMicroelectronics

M29W200BB70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating in asynchronous mode, it ensures reliable data storage across various temperatures.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29W200BT70N6E by STMicroelectronics

M29W200BT70N6E

STMicroelectronics

M29W200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F400BB70N6E by STMicroelectronics

M29F400BB70N6E

STMicroelectronics

M29F400BB70N6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F400BT70N6E by STMicroelectronics

M29F400BT70N6E

STMicroelectronics

M29F400BT70N6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29W010B70K6E by STMicroelectronics

M29W010B70K6E

STMicroelectronics

M29W010B70K6E from STMicroelectronics is a NOR flash memory with a 128Kx8 organization, operating at 3.3V and supporting asynchronous mode. It features an industrial temperature range of -40 °C to 85 °C and offers up to 100,000 write/erase cycles. Ideal for embedded applications, it ensures reliable data storage in compact designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W010B70N6E by STMicroelectronics

M29W010B70N6E

STMicroelectronics

M29W010B70N6E from STMicroelectronics is a NOR flash memory with a 128K x 8 organization, operating at 3.3V and featuring a max access time of 70 ns. It supports asynchronous operation and offers industrial-grade temperature range (-40 °C to 85 °C). Ideal for embedded applications, it ensures high endurance with up to 100k write/erase cycles.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29F400BB70M6E by STMicroelectronics

M29F400BB70M6E

STMicroelectronics

M29F400BB70M6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. This compact SOIC package ensures reliable performance in various environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3/e4

28.2 mm

4194304 bit

FLASH

16

1

1,2,1,7

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

YES

2.62 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

13.3 mm

M29F400BT70M6E by STMicroelectronics

M29F400BT70M6E

STMicroelectronics

M29F400BT70M6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SO package ensures efficient surface mounting.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3/e4

28.2 mm

4194304 bit

FLASH

16

1

1,2,1,7

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

YES

2.62 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

13.3 mm