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M29W040B55K6E

STMicroelectronics

M29W040B55K6E by STMicroelectronics

M29W040B55K6E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, ideal for industrial applications. It features an asynchronous mode, 100k write/erase cycles, and operates b/w -40 °C to 85 °C. Its compact design ensures efficient surface mounting in various devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Vyrian

USA . 6,197 parts In-Stock

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Anansix

USA . 2,856 parts In-Stock

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Martec Srl

Italy . 993 parts In-Stock

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Digiode

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Bristol Electronics

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Atlantic Semiconductor

USA . 100 parts In-Stock

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A&K Electronics

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IDEA Electronic Components Group

UK . 181 parts In-Stock

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$3.985

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$3.586

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MKK Technologies

India . 501 parts In-Stock

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$7.493

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DigiPath Technology Company

USA . 501 parts In-Stock

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AZTECH Wire

Italy . 1,149 parts In-Stock

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$15.710

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A-Z Elektronik GmbH

Germany . 6,002 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,001 parts In-Stock

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Corphita

USA . 3,425 parts In-Stock

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Parana Technologies

USA . 1,904 parts In-Stock

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Perfect Parts

USA . 1,165 parts In-Stock

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Microchip USA

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Kepictronics

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Overview

Unlock the power of reliable performance with the M29W040B55K6E from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality Flash Memory is designed for versatility, making it ideal for industrial applications where durability and efficiency are paramount. With its low power consumption and robust design, this memory chip ensures longevity and dependable operation, offering customers unmatched value and peace of mind in their projects. Drive your designs forward with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection from environmental stress, enhancing the longevity of the product.

Surface Mount: YES

Surface mount technology allows for a compact design and smaller footprint, making it ideal for space-constrained applications.

Package Shape: RECTANGULAR

The rectangular shape is optimal for efficient use of PCB space and allows for easier integration into various designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in timing and is suitable for systems requiring immediate data access.

Nominal Supply Voltage / Vsup: 3.3 V

The standard operating voltage of 3.3 V is compatible with many modern electronic devices, facilitating easy integration.

Power Supplies: 3.3 V

Supports a single power supply requirement, simplifying power management in circuit designs.

No. of Terminals: 32

With 32 terminals, it supports a wide range of functionalities and connections, allowing for more complex circuit designs.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging provides reliable connections and is conducive to high-density circuits.

Maximum Operating Temperature: 85 °C

The high operational temperature threshold makes this memory suitable for industrial applications with demanding thermal environments.

Organization: 512KX8

512K memory organization allows for efficient data handling and more effective storage management.

Minimum Operating Temperature: -40 °C

Operating at temperatures as low as -40 °C makes this memory ideal for extreme environmental applications.

No. of Sectors/Size: 8

The division into sectors allows for easier data management and improved organization of stored information.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and resistance to oxidation, ensuring reliable connections over time.

Terminal Position: QUAD

Quad terminal position allows for effective heat dissipation and improved electrical performance.

Maximum Seated Height: 3.56 mm

The low profile of the package makes it suitable for compact devices where space is at a premium.

Width: 11.43 mm

The width of 11.43 mm makes it versatile for various PCB layouts and design configurations.

Minimum Supply Voltage (Vsup): 3 V

The ability to operate at a minimum voltage of 3 V enhances compatibility with a broader range of applications.

Type: NOR TYPE

NOR flash type provides faster read speeds, making it a good choice for applications where speed is critical.

Length: 13.97 mm

A length of 13.97 mm ensures that it fits well within standard PCB footprints while offering sufficient performance.

Programming Voltage (V): 3

A programming voltage of 3 V allows for simpler design and integration into existing systems.

Temperature Grade: INDUSTRIAL

Industrial temperature grade guarantees reliability in harsh conditions, ensuring the product meets rigorous industrial standards.

Technology: CMOS

CMOS technology enables low power consumption and high-speed performance, making it energy-efficient.

Parallel or Serial: PARALLEL

A parallel interface allows for high data throughput, increasing overall system performance.

Terminal Form: J BEND

J bend terminal form provides robust connectivity and support for reliable soldering onto PCBs.

Sector Size (Words): 64K

64K sector size optimizes memory management, enabling efficient storage and retrieval of data within sectors.

Maximum Supply Current: 20 mA

With a maximum supply current of 20 mA, this flash memory is power-efficient and suitable for battery-operated devices.

No. of Words: 524288 words

The capacity of 524,288 words provides substantial storage space for applications, making it ideal for data-intensive tasks.

Toggle Bit: YES

Toggle bit functionality enhances error detection during read operations, improving data integrity.

Memory Width: 8

An 8-bit memory width aligns with standard data formats, simplifying integration with existing systems.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch allows for greater density in PCB design without compromising manufacturability.

No. of Words Code: 512K

A memory size of 512K words meets the requirements of many embedded systems, providing adequate storage for firmware and data.

Command User Interface: YES

A command user interface allows for greater control over memory operations, enabling seamless programming and management.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6 V ensures flexibility in power supply options while maintaining stable operation.

Endurance: 100000 Write/Erase Cycles

High endurance with 100,000 write/erase cycles signifies reliability and makes it suitable for applications requiring frequent updates.

Memory Density: 4194304 bit

With a memory density of 4,194,304 bits, this product can store large amounts of data, ideal for complex applications.

Memory IC Type: FLASH

As a flash memory IC, it offers non-volatility, making it perfect for data retention in power loss situations.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current ensures energy efficiency, prolonging battery life in portable devices.

Maximum Access Time: 55 ns

Fast access time of 55 ns enables quick data retrieval, enhancing overall system performance.

Data Polling: YES

Data polling capability aids in efficiently managing memory operations, improving data integrity during updates.

Technical Specifications

Flash Memory M29W040B55K6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M29W040B55K6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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