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M50FW040K5G

STMicroelectronics

M50FW040K5G by STMicroelectronics

M50FW040K5G from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring reliable data storage.

Median Price

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Lifecycle Status

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12

In-Stock Inventory

1k+

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Chip Stock

USA . 19,400 parts In-Stock

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Vyrian

USA . 6,477 parts In-Stock

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Anansix

USA . 1,663 parts In-Stock

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Bristol Electronics

USA . 929 parts In-Stock

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Digiode

USA . 825 parts In-Stock

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Carlin Systems, Inc.

USA . 767 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 711 parts In-Stock

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Inventory MP

USA . 641 parts In-Stock

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Sea View Technologies

USA . 576 parts In-Stock

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Lantek

USA . 450 parts In-Stock

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450

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J2 Sourcing AB

Sweden . 355 parts In-Stock

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355

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Cyclops Electronics Ltd

UK . 20 parts In-Stock

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20

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IDEA Electronic Components Group

UK . 51 parts In-Stock

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$4.922

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$4.430

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MKK Technologies

India . 257 parts In-Stock

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$9.256

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DigiPath Technology Company

USA . 257 parts In-Stock

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$9.256

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AZTECH Wire

Italy . 611 parts In-Stock

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$22.080

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

Germany . 6,599 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,399 parts In-Stock

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Corphita

USA . 3,903 parts In-Stock

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Parana Technologies

USA . 2,277 parts In-Stock

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$5.885

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Assy Fe

Spain . 1,000 parts In-Stock

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Kepictronics

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Microchip USA

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GreenTree Electronics

Israel . 450 parts In-Stock

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Perfect Parts

USA . 3 parts In-Stock

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Overview

Unlock the potential of your devices with the M50FW040K5G Flash Memory from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality NOR flash memory delivers exceptional performance for a wide range of applications, from consumer electronics to industrial automation. Enjoy benefits like low power consumption and reliable data retention, ensuring your projects remain efficient and cutting-edge. Trust in STMicroelectronics' expertise and elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and reliability, making it suitable for various applications.

Surface Mount: YES

Being surface mount allows for a compact design and efficient use of board space, ideal for modern electronics.

Package Shape: RECTANGULAR

The rectangular shape is standard for many circuit designs, making it easy to integrate into existing layouts.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances performance and speed, enabling faster data processing and transfers.

Nominal Supply Voltage / Vsup: 3.3 V

Operating at a nominal voltage of 3.3 V ensures compatibility with common digital circuits, reducing design complexity.

Power Supplies (V): 3.3

Supports 3.3V power supplies, making it suitable for low-power applications and helping to save energy.

No. of Terminals: 32

With 32 terminals, this flash memory device offers sufficient connectivity for various configurations.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging aids in heat dissipation and signal integrity, contributing to efficient operation.

Maximum Operating Temperature: 85 °C

The ability to operate at temperatures up to 85 °C makes this product suitable for high-temperature environments.

Organization: 512KX8

This organization provides a good balance between capacity and access speed, making it versatile for many applications.

Minimum Operating Temperature: -20 °C

Operating down to -20 °C ensures reliability in colder environments, extending the range of applicable use cases.

No. of Sectors/Size: 8

Having 8 sectors allows for better management of data and efficient use of memory across different applications.

Terminal Finish: MATTE TIN

A matte tin finish enhances solderability and provides good corrosion resistance, leading to improved performance.

Terminal Position: QUAD

Quad terminal position improves connectivity and helps in achieving better electrical performance.

Maximum Seated Height: 3.56 mm

The relatively low height allows for compact designs and easy integration into various circuit boards.

Width: 11.43 mm

A reasonable width contributes to space-efficient designs, ensuring it fits well into a variety of applications.

Minimum Supply Voltage (Vsup): 3 V

This broad supply voltage range makes it adaptable for various power conditions.

Type: NOR TYPE

NOR memory provides random access capability, making it suitable for applications requiring quick data retrieval.

Length: 13.97 mm

The compact length is advantageous for space-constrained designs typically found in portable devices.

Programming Voltage (V): 3

A programming voltage of 3V facilitates straightforward integration with common digital systems.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it ideal for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel data handling allows for higher throughput, making this memory effective for performance-sensitive applications.

Terminal Form: J BEND

J bend terminals are easy to solder, enhancing manufacturability and repairability.

Maximum Supply Current: 60 mA

A maximum supply current of 60 mA indicates efficient power usage, making this memory suitable for battery-powered applications.

No. of Words: 524288 words

With 524288 words, it provides substantial memory capacity for a variety of applications.

Memory Width: 8

An 8-bit memory width is ideal for supporting a range of data widths in modern computing applications.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm allows for a versatile layout on PCBs, facilitating easier integration.

No. of Words Code: 512K

512K words offer ample space for both code and data storage, making it a good fit for embedded applications.

Command User Interface: YES

Having a user-friendly command interface simplifies programmatic access, enhancing usability.

Ready or Busy: YES

The ready/busy functionality ensures that the host system can manage data transfers efficiently, improving overall system performance.

Maximum Supply Voltage (Vsup): 3.6 V

A higher maximum voltage threshold offers flexibility in power supply design, accommodating various systems.

Memory Density: 4194304 bit

This memory density provides a considerable amount of storage to cater to growing data requirements.

Memory IC Type: FLASH

Being a FLASH type memory, it supports non-volatile storage, retaining data even when power is removed.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current enhances overall system efficiency, particularly critical in battery-operated devices.

Maximum Access Time: 11 ns

Fast access times ensure swift data retrieval, making this product suitable for high-performance applications.

Technical Specifications

Flash Memory M50FW040K5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

3.56 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50FW040K5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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