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M50FLW040AK1G

STMicroelectronics

M50FLW040AK1G by STMicroelectronics

M50FLW040AK1G from STMicroelectronics is a 4Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 11 ns and operating in synchronous mode. It comes in a compact rectangular package with 32 terminals. Ideal for embedded applications requiring fast data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,758 parts In-Stock

1+ parts

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2,758

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Anansix

USA . 1,313 parts In-Stock

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1,313

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Vyrian

USA . 662 parts In-Stock

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662

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,260 parts In-Stock

1+ parts

$2.917

100+ parts

-

1k+ parts

$2.626

10k+ parts

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2,260

$2.917

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$2.626

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MKK Technologies

India . 1,501 parts In-Stock

1+ parts

$5.486

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1,501

$5.486

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DigiPath Technology Company

USA . 1,501 parts In-Stock

1+ parts

$5.486

100+ parts

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1,501

$5.486

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Corphita

USA . 3,999 parts In-Stock

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3,999

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Parana Technologies

USA . 366 parts In-Stock

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100+ parts

$3.488

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366

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$3.488

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Overview

Unlock unparalleled performance with the M50FLW040AK1G flash memory from STMicroelectronics, a leader in innovative semiconductor solutions. Engineered for reliability and efficiency, this compact memory chip is perfect for diverse applications—ranging from consumer electronics to industrial devices. With its fast access times and robust design, you can count on rapid data retrieval and exceptional longevity, ensuring your projects run smoothly while delivering outstanding value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against environmental factors, making the product reliable for long-term use.

Surface Mount: YES

Being surface mount compatible allows for easy integration into modern electronic devices with compact designs.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, facilitating more versatile designs in various applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures faster data transfer rates and improved performance, making it suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

The standard supply voltage of 3.3V is commonly used in electronics, ensuring compatibility with various systems.

Power Supplies (V): 3.3

Operating at 3.3V minimizes power consumption, making it energy-efficient for battery-powered devices.

No. of Terminals: 32

A 32-terminal configuration provides sufficient connectivity for both data and control lines, supporting complex functionalities.

Package Style (Meter): CHIP CARRIER

The chip carrier style facilitates efficient heat dissipation, enhancing the reliability of the memory device during operation.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures functionality in a wide range of environments, enhancing its application versatility.

Organization: 512KX8

The 512KX8 organization allows for efficient data storage and retrieval, catering to diverse application requirements.

Minimum Operating Temperature: 0 °C

Operating down to 0 °C allows for usage in cooler environments, increasing the range of potential applications.

No. of Sectors/Size: 48,5

Multiple sectors enhance the product’s ability for data management and address allocation, optimizing performance.

Terminal Finish: MATTE TIN

Matte tin finish improves solderability and reduces oxidation, ensuring reliable connections during assembly.

Terminal Position: QUAD

Quad terminal positioning enables efficient routing on the PCB and supports high-speed data transfer.

Maximum Seated Height: 3.56 mm

The low profile minimizes space requirements, making it suitable for compact electronic designs.

Width: 11.43 mm

This width fits well within standard PCB layouts, providing flexibility in design.

Minimum Supply Voltage (Vsup): 3 V

A minimum supply voltage of 3V ensures compatibility with a broad range of devices, enhancing usability.

Type: NOR TYPE

NOR type memory offers fast read times and is ideal for applications requiring frequent data access.

Length: 13.97 mm

The compact length supports space-efficient designs in modern electronics.

Programming Voltage (V): 3

Low programming voltage enhances safety and compatibility with typical circuit designs.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliable performance in everyday environments, ideal for consumer electronics.

Technology: CMOS

CMOS technology reduces power consumption and increases speed, making it favorable for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel architecture allows for faster data processing, enhancing overall system performance.

Terminal Form: J BEND

J bend terminals facilitate easy soldering and improve reliability in connections.

Sector Size (Words): 4K,64K

Various sector sizes offer flexibility for different data management needs, optimizing storage use.

Maximum Supply Current: 60 mA

Moderate current requirements make it suitable for various low-power applications.

No. of Words: 524288 words

The substantial number of words allows for significant data storage, supporting applications that require larger data capacity.

Memory Width: 8

An 8-bit memory width is standard for many applications, ensuring compatibility and ease of integration.

Terminal Pitch: 1.27 mm

A standard terminal pitch aids in ease of assembly and compatibility with existing manufacturing systems.

No. of Words Code: 512K

512K word capacity supports diverse applications, providing ample memory storage for projects.

Command User Interface: YES

A user-friendly command interface simplifies integration and control, improving user experience.

Ready or Busy: YES

Ready/busy signals provide clear status indicators, enhancing ease of use in communication with other system components.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum voltage threshold ensures safety and stability under varying operating conditions.

Boot Block: TOP

Top boot block configuration allows for easy access to boot data, streamlining system startup processes.

Memory Density: 4194304 bit

High memory density supports more data storage in less physical space, ideal for compact electronic systems.

Memory IC Type: FLASH

Flash memory type enables easy data rewriting and is essential for applications needing frequent updates.

Maximum Standby Current: 0.0001 Amp

Low standby current ensures minimal power usage when the device is inactive, enhancing battery longevity.

Maximum Access Time: 11 ns

Fast access time improves read speeds, contributing to overall system performance and responsiveness.

Technical Specifications

Flash Memory M50FLW040AK1G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

48,5

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

3.56 mm

Sector Size (Words):

4K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50FLW040AK1G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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