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M50FLW040AK1T

STMicroelectronics

M50FLW040AK1T by STMicroelectronics

M50FLW040AK1T from STMicroelectronics is a 4Mbit NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features fast access times of 11ns, operates in temperatures from 0 °C to 70 °C, and is ideal for embedded applications. Its compact chip carrier design ensures efficient surface mounting in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,975 parts In-Stock

1+ parts

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3,975

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Anansix

USA . 2,645 parts In-Stock

1+ parts

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2,645

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Digiode

USA . 1,623 parts In-Stock

1+ parts

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1,623

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,053 parts In-Stock

1+ parts

$4.822

100+ parts

-

1k+ parts

$4.340

10k+ parts

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2,053

$4.822

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$4.340

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MKK Technologies

India . 62 parts In-Stock

1+ parts

$9.067

100+ parts

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62

$9.067

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DigiPath Technology Company

USA . 62 parts In-Stock

1+ parts

$9.067

100+ parts

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1k+ parts

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10k+ parts

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62

$9.067

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Corphita

USA . 1,316 parts In-Stock

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1,316

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Parana Technologies

USA . 887 parts In-Stock

1+ parts

-

100+ parts

$5.765

1k+ parts

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10k+ parts

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887

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$5.765

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Overview

Unlock unparalleled performance with the M50FLW040AK1T Flash Memory from STMicroelectronics, a leader in innovative semiconductor solutions. Crafted for reliability and speed, this compact memory solution is perfect for consumer electronics, automotive applications, and industrial automation. Enhance your designs with superior data retention and low power consumption, ensuring efficiency and longevity. Experience the excellence of STMicroelectronics—where quality meets cutting-edge technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures longevity and reliability in various environmental conditions.

Surface Mount: YES

Surface mount technology allows for compact designs, saving space on circuit boards and improving manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape is advantageous for standard PCB layouts and easy integration into existing designs.

Operating Mode: SYNCHRONOUS

Synchronous operation provides faster access times and improves overall data transfer rates.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal voltage of 3.3V is standard for many applications, ensuring compatibility with common devices.

Power Supplies (V): 3.3

Utilizing a 3.3V power supply reduces power consumption and is suitable for low-voltage applications.

No. of Terminals: 32

32 terminals facilitate efficient data communication, allowing for high-speed processing in compact designs.

Package Style (Meter): CHIP CARRIER

The chip carrier packaging enhances thermal performance, which is essential for high-speed applications.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliable performance in a wide range of environments.

Organization: 512KX8

The memory organization allows for efficient data management and retrieval, making it suitable for various applications.

Minimum Operating Temperature: 0 °C

Operating at a minimum temperature of 0 °C expands the use case scenarios in diverse applications, even in cooler climates.

No. of Sectors/Size: 48,5

The existence of multiple sectors enhances data organization and management, allowing for better control of memory usage.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides good solderability and is suitable for long-lasting connections.

Terminal Position: QUAD

Quad terminal positioning promotes robust electrical performance and greater flexibility in board layout.

Maximum Seated Height: 3.56 mm

The low profile design allows for optimized placement in compact systems and helps reduce overall device size.

Width: 11.43 mm

A width of 11.43 mm makes it compatible with a variety of PCB layouts and space-saving designs.

Minimum Supply Voltage (Vsup): 3 V

The ability to operate at a minimum of 3V increases flexibility for a range of power supply options.

Type: NOR TYPE

NOR type memory is known for its fast random access times, making it ideal for code storage and retrieval.

Length: 13.97 mm

With a compact length of 13.97 mm, it supports specialized and dense electronic designs.

Programming Voltage (V): 3

A programming voltage of 3V simplifies interfacing with many standard microcontrollers, facilitating easier integration.

Temperature Grade: COMMERCIAL

Commercial temperature grading ensures reliability in moderate environmental conditions, suitable for everyday applications.

Technology: CMOS

CMOS technology offers lower power consumption, making it ideal for battery-powered applications.

Parallel or Serial: PARALLEL

Parallel interface allows for higher data throughput, appealing to high-performance applications.

Terminal Form: J BEND

J bend terminal form enhances mechanical stability when mounted to a PCB.

Sector Size (Words): 4K, 64K

Flexible sector sizes accommodate varying application needs, optimizing both performance and memory usage.

Maximum Supply Current: 60 mA

The low maximum supply current of 60 mA indicates efficient power consumption, beneficial for energy-sensitive applications.

No. of Words: 524288 words

With 524,288 words of memory, it provides ample storage for various data applications.

Memory Width: 8

An 8-bit memory width aligns well with common data sizes in modern computing, enhancing compatibility.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch is standard for many components, ensuring compatibility with existing PCB designs.

No. of Words Code: 512K

Offering a memory code of 512K makes it versatile for applications such as firmware storage and configurations.

Command User Interface: YES

The presence of a command user interface simplifies user interaction and control over memory operations.

Ready or Busy: YES

The ready/busy feature provides necessary status feedback, improving the efficiency of memory access and data management.

Maximum Supply Voltage (Vsup): 3.6 V

Operating up to 3.6V ensures compatibility with high-voltage systems while maintaining reliable performance.

Boot Block: TOP

A top boot block configuration allows for simpler firmware retrieval during system startup.

Memory Density: 4194304 bit

The high memory density of 4194304 bits is advantageous for applications requiring substantial storage capacity in a compact form.

Memory IC Type: FLASH

As a flash memory IC, it allows for fast data retention and erasure, offering superiority over traditional memory technologies.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current reduces power consumption when not in active use, ideal for energy-efficient applications.

Maximum Access Time: 11 ns

A maximum access time of 11 ns ensures swift data retrieval, boosting overall system performance.

Technical Specifications

Flash Memory M50FLW040AK1T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

48,5

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

3.56 mm

Sector Size (Words):

4K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50FLW040AK1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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