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M50FLW040AN1G

STMicroelectronics

M50FLW040AN1G by STMicroelectronics

M50FLW040AN1G from STMicroelectronics is a 4Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 11 ns and operating in synchronous mode. It comes in a compact SOIC-40 package, ideal for embedded applications. With 48 sectors and dual terminals, it ensures efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,494 parts In-Stock

1+ parts

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2,494

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Digiode

USA . 169 parts In-Stock

1+ parts

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169

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Vyrian

USA . 81 parts In-Stock

1+ parts

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100+ parts

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81

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,072 parts In-Stock

1+ parts

$4.513

100+ parts

-

1k+ parts

$4.061

10k+ parts

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2,072

$4.513

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$4.061

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MKK Technologies

India . 1,234 parts In-Stock

1+ parts

$8.486

100+ parts

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10k+ parts

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1,234

$8.486

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DigiPath Technology Company

USA . 1,234 parts In-Stock

1+ parts

$8.486

100+ parts

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1,234

$8.486

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Corphita

USA . 1,277 parts In-Stock

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1,277

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Parana Technologies

USA . 1,188 parts In-Stock

1+ parts

-

100+ parts

$5.396

1k+ parts

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10k+ parts

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1,188

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$5.396

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Overview

Unlock the potential of your projects with the M50FLW040AN1G from STMicroelectronics, a leader in innovative technology. This high-quality flash memory solution offers reliability and exceptional performance, making it ideal for a range of applications—from consumer electronics to industrial systems. With its compact design and robust features, enjoy faster data access and enhanced efficiency that translates into significant value for your designs. Choose STMicroelectronics for quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for a compact design, saving space on the PCB and enabling high-density circuit layouts.

Package Shape: RECTANGULAR

The rectangular shape provides straightforward integration into standard PCB layouts, simplifying manufacturing processes.

Operating Mode: Synchronous

Synchronous operation enhances data transfer rates, allowing for quicker access to memory compared to asynchronous types.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a standard voltage of 3.3V makes this device compatible with a wide range of modern electronics.

Power Supplies (V): 3.3

The consistent 3.3V power supply simplifies design requirements and improves energy efficiency.

No. of Terminals: 40

Having 40 terminals provides ample connectivity options for enhanced functionality and versatility.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile and shrink pitch design allows for efficient space utilization on PCBs, perfect for compact electronic devices.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliable performance in moderately hot environments.

Organization: 512KX8

The organization of 512Kx8 allows for efficient data storage and retrieval, making it ideal for various applications.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0 °C enables functionality in a range of typical environmental conditions.

No. of Sectors/Size: 48,5

Having multiple sectors allows for efficient memory management and improves the organization of data.

Terminal Position: DUAL

Dual terminal positioning enhances soldering stability and improves connectivity reliability.

Maximum Seated Height: 1.2 mm

A maximum seated height of 1.2mm supports low-profile designs, making it suitable for space-constrained applications.

Width: 10 mm

The compact width makes it suitable for integration into tight spaces on PCBs while maintaining good performance.

Minimum Supply Voltage (Vsup): 3 V

Operating at a minimum supply voltage of 3V ensures compatibility with various power supplies and battery-operated devices.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C indicates compatibility with modern soldering techniques, ensuring robust assembly.

Type: NOR TYPE

NOR type allows for random access and high-speed read operations, making it suitable for code storage and execution.

Length: 18.4 mm

The length of 18.4mm provides a balanced footprint, enabling easy PCB layout while fitting within standard design rules.

Programming Voltage (V): 3

A programming voltage of 3V simplifies integration with commonly used microcontrollers and simplifies circuit design.

Temperature Grade: COMMERCIAL

Rated for commercial temperatures, it guarantees reliable performance for consumer electronics and general applications.

Technology: CMOS

CMOS technology allows for low power consumption and high-density integration, enhancing overall performance.

Parallel or Serial: PARALLEL

Parallel communication provides faster data transfer rates, making it optimal for applications requiring high-speed memory access.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and inspection, improving manufacturing efficiency and reliability.

Sector Size (Words): 4K,64K

Flexible sector sizes allow for tailored memory management, improving efficiency for different application requirements.

Maximum Supply Current: 60 mA

A maximum supply current of 60mA indicates low power consumption, suitable for power-sensitive applications.

No. of Words: 524288 words

With 524,288 words of storage capacity, it supports substantial data requirements for various applications.

Memory Width: 8

An 8-bit memory width allows for efficient data handling and compatibility with most microcontroller architectures.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch is suitable for modern PCB designs, supporting higher density layouts without sacrificing performance.

No. of Words Code: 512K

512K words of coded data provides ample storage for firmware and other critical software in embedded systems.

Command User Interface: YES

A command user interface simplifies programming and integration into various applications, enhancing user experience.

Ready or Busy: YES

The ready or busy indicator provides clear status feedback, improving system efficiency and data handling.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V ensures stable performance across a range of power supply variations.

Boot Block: TOP

TOP boot block configuration enhances security for firmware storage, making it ideal for safety-critical applications.

Memory Density: 4194304 bit

The high memory density of 4194304 bits makes it suitable for applications requiring extensive data storage, like embedded systems.

Memory IC Type: FLASH

As a flash memory IC, it provides non-volatile data storage, retaining information even when powered off.

Maximum Standby Current: 0.0001 Amp

A maximum standby current of 0.0001 Amps indicates excellent energy efficiency, ideal for battery-operated devices.

Maximum Access Time: 11 ns

A maximum access time of 11 ns ensures swift data retrieval, enhancing overall system performance and responsiveness.

Technical Specifications

Flash Memory M50FLW040AN1G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G40

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

48,5

No. of Terminals:

40

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

4K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M50FLW040AN1G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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