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M50FLW040AK5G

STMicroelectronics

M50FLW040AK5G by STMicroelectronics

M50FLW040AK5G from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11 ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring fast data storage and retrieval.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 16,000 parts In-Stock

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Vyrian

USA . 3,710 parts In-Stock

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Digiode

USA . 2,382 parts In-Stock

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Anansix

USA . 1,869 parts In-Stock

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IDEA Electronic Components Group

UK . 196 parts In-Stock

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$2.839

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$2.555

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$2.555

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MKK Technologies

India . 1,076 parts In-Stock

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$5.339

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DigiPath Technology Company

USA . 1,076 parts In-Stock

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$5.339

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AZTECH Wire

Italy . 416 parts In-Stock

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$13.160

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,781 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,710 parts In-Stock

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Metaverse IC Inc.

Canada . 6,628 parts In-Stock

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Corphita

USA . 4,768 parts In-Stock

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Kepictronics

USA . 4,628 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,473 parts In-Stock

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Parana Technologies

USA . 1,106 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Microchip USA

USA . 106 parts In-Stock

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Overview

Elevate your designs with the M50FLW040AK5G from STMicroelectronics—a trusted leader in high-quality flash memory solutions. This versatile NOR Flash Memory delivers exceptional performance for a wide range of applications, from consumer electronics to industrial systems. With its reliable synchronous operation and robust temperature range, it ensures durability and efficiency. Experience enhanced data retention and faster access speeds that empower your innovations while benefiting from STMicroelectronics’ commitment to excellence and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy materials provide robust protection against environmental factors, enhancing durability.

Surface Mount: YES

Surface mount technology allows for a compact design, enabling higher density in circuit boards.

Package Shape: RECTANGULAR

Rectangular packaging facilitates efficient use of space on PCB, optimizing layout design.

Operating Mode: SYNCHRONOUS

Synchronous operation enables faster data access and improved overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V provides compatibility with a wide range of systems, ensuring flexibility.

Power Supplies (V): 3.3

Using a 3.3V supply reduces power consumption, enhancing energy efficiency.

No. of Terminals: 32

Shorter signal paths with more terminals improve data integrity and signal quality.

Package Style (Meter): CHIP CARRIER

Chip carrier style offers better thermal performance and facilitates easy mounting.

Maximum Operating Temperature: 85 °C

Operating at elevated temperatures ensures reliability in demanding environments.

Organization: 512KX8

512Kx8 organization allows for efficient memory addressing and management.

Minimum Operating Temperature: -20 °C

Low temperature operation expands the range of applications in various environments.

No. of Sectors/Size: 8

Multiple sectors offer flexibility in memory management and data allocation.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance.

Terminal Position: QUAD

Quad terminal positioning optimizes space and ensures stable connections on the PCB.

Maximum Seated Height: 3.56 mm

Compact seated height aids in the design of low-profile devices.

Width: 11.43 mm

Narrow width enhances compatibility with various electronic designs.

Minimum Supply Voltage (Vsup): 3 V

Support for a minimum supply voltage of 3V increases versatility in power supply requirements.

Type: NOR TYPE

NOR type architecture allows for faster read times and random access, beneficial for many applications.

Length: 13.97 mm

The optimal length allows for integration into compact designs without sacrificing performance.

Programming Voltage (V): 3

A programming voltage of 3V simplifies interfacing with most microcontrollers.

Technology: CMOS

CMOS technology ensures low power consumption and high integration density.

Parallel or Serial: PARALLEL

Parallel communication enables faster data throughput, enhancing overall performance.

Terminal Form: J BEND

J bend terminals provide secure installation and reliable connections.

Maximum Supply Current: 60 mA

Low supply current minimizes device heating and energy usage, making it eco-friendly.

No. of Words: 524288 words

A capacity of 524288 words allows for significant data storage, suitable for various applications.

Memory Width: 8

8-bit memory width supports efficient data handling and interface with microcontrollers.

Terminal Pitch: 1.27 mm

1.27 mm terminal pitch is standard for many circuit designs, simplifying compatibility.

No. of Words Code: 512K

512K word capacity supports substantial data requirements for embedded applications.

Command User Interface: YES

User-friendly command interface simplifies integration into various systems.

Ready or Busy: YES

This feature allows the system to monitor memory status effectively, ensuring data integrity.

Maximum Supply Voltage (Vsup): 3.6 V

Supporting a maximum voltage of 3.6V ensures compatibility with a wide array of devices.

Memory Density: 4194304 bit

High memory density provides ample storage for complex applications and systems.

Memory IC Type: FLASH

Flash type memory offers quick data writing and erasing capabilities, enhancing performance.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current prolongs battery life in portable applications.

Maximum Access Time: 11 ns

Fast access time of 11 ns enhances speed in data retrieval, improving system responsiveness.

Technical Specifications

Flash Memory M50FLW040AK5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

3.56 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50FLW040AK5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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