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M50FLW040AK5T

STMicroelectronics

M50FLW040AK5T by STMicroelectronics

M50FLW040AK5T from STMicroelectronics is a 4Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 11 ns. It operates in synchronous mode and supports parallel interface for efficient data transfer. Ideal for embedded applications, it offers robust performance across -20 °C to 85 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,157 parts In-Stock

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Anansix

USA . 2,108 parts In-Stock

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2,108

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Digiode

USA . 193 parts In-Stock

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193

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 455 parts In-Stock

1+ parts

$3.254

100+ parts

-

1k+ parts

$2.929

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455

$3.254

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$2.929

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MKK Technologies

India . 291 parts In-Stock

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$6.119

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291

$6.119

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DigiPath Technology Company

USA . 291 parts In-Stock

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$6.119

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291

$6.119

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Corphita

USA . 3,038 parts In-Stock

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Parana Technologies

USA . 2,029 parts In-Stock

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$3.891

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2,029

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$3.891

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Overview

Unlock the potential of your designs with the M50FLW040AK5T Flash Memory from STMicroelectronics, a trusted leader in innovative technology. This high-quality NOR flash memory delivers exceptional performance, ensuring reliability for diverse applications like consumer electronics and industrial systems. With its compact design and efficient power management, the M50FLW040AK5T enhances efficiency while reducing costs—perfect for engineers seeking dependable solutions that drive success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures protection from environmental factors, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for a compact design, ideal for modern electronic devices with space constraints.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient board layout and soldering processes.

Operating Mode: SYNCHRONOUS

Synchronous operation provides higher data transfer rates, enhancing performance in high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

The standard 3.3V operation is compatible with most modern electronic circuits and microcontrollers.

Power Supplies (V): 3.3

Uniform power supply requirements ensure ease of integration into existing systems.

No. of Terminals: 32

With 32 terminals, this memory chip can easily integrate into various circuit designs while providing multiple connections.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging offers robustness and good thermal performance, making it suitable for high-reliability applications.

Maximum Operating Temperature: 85 °C

High operating temperature capability ensures reliability and performance in demanding environments.

Organization: 512KX8

The organization provides a balanced structure for both read and write operations, optimizing efficiency.

Minimum Operating Temperature: -20 °C

This wide temperature range enables operation in a variety of environments, from cold to warm applications.

No. of Sectors/Size: 48.5

A higher number of sectors allows for better management of data, making it convenient for various applications.

Terminal Finish: TIN LEAD

The tin-lead finish ensures reliable solderability and durability, contributing to longevity and performance.

Terminal Position: QUAD

Quad terminal position offers flexibility in layout design, allowing for optimal circuit integration.

Maximum Seated Height: 3.56 mm

A low profile contributes to space-saving designs in applications where height is a constraint.

Width: 11.43 mm

A compact width fits well into tight spaces on PCB layouts, ideal for miniaturized electronics.

Minimum Supply Voltage (Vsup): 3 V

The range of supply voltage allows for compatibility with a variety of power sources.

Type: NOR TYPE

NOR flash memory is well-suited for applications requiring high-speed random access and efficient reading.

Length: 13.97 mm

The overall dimensions contribute to a compact form factor that is essential for small devices.

Programming Voltage (V): 3

The low programming voltage minimizes power consumption and enhances the device's reliability.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making this product energy-efficient.

Parallel or Serial: PARALLEL

Parallel data access enables faster reading and writing speeds, enhancing overall device performance.

Terminal Form: J BEND

J-bend terminals facilitate easier handling and soldering during assembly, improving the production process.

Sector Size (Words): 4K, 64K

Flexible sector sizes allow for optimal data organization depending on application needs.

Maximum Supply Current: 60 mA

Reasonable current requirements ensure low power consumption, extending battery life in portable devices.

No. of Words: 524288 words

A large word count enhances storage capacity, catering to complex applications needing substantial memory.

Memory Width: 8

An 8-bit width is generally compatible with a variety of microcontrollers, making integration simpler.

Terminal Pitch: 1.27 mm

Standard pitch allows for compatibility with commonly used PCBs and components.

No. of Words Code: 512K

The capacity of 512K words provides ample space for firmware and data storage in embedded applications.

Command User Interface: YES

A command user interface simplifies interaction with the memory, enhancing programming capabilities.

Ready or Busy: YES

A ready/busy signal indicates the status of the device, facilitating better control in multi-tasking systems.

Maximum Supply Voltage (Vsup): 3.6 V

This extended voltage capability allows for flexibility in power supply choices, ensuring compatibility.

Boot Block: TOP

A top boot block enables efficient firmware storage and retrieval, making device updates more manageable.

Memory Density: 4194304 bit

High memory density supports demanding applications, providing significant space for data storage in compact form.

Memory IC Type: FLASH

Flash memory allows for greater data retention and faster erase times, crucial for modern applications.

Maximum Standby Current: 0.0001 Amp

A very low standby current ensures energy efficiency, particularly important for battery-powered devices.

Maximum Access Time: 11 ns

Fast access time provides rapid response and high performance, which enhances the user experience in real-time applications.

Technical Specifications

Flash Memory M50FLW040AK5T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

48,5

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

3.56 mm

Sector Size (Words):

4K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50FLW040AK5T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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