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M50FLW040AN1TP

STMicroelectronics

M50FLW040AN1TP by STMicroelectronics

M50FLW040AN1TP from STMicroelectronics is a 4Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 11 ns. It operates in synchronous mode and comes in a compact SOIC package, ideal for embedded applications. With 48 sectors and dual terminals, it ensures efficient data management.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,315 parts In-Stock

1+ parts

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2,315

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Digiode

USA . 1,786 parts In-Stock

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1,786

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Vyrian

USA . 1,208 parts In-Stock

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1,208

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 897 parts In-Stock

1+ parts

$2.608

100+ parts

-

1k+ parts

$2.347

10k+ parts

-

897

$2.608

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$2.347

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MKK Technologies

India . 1,680 parts In-Stock

1+ parts

$4.905

100+ parts

-

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10k+ parts

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1,680

$4.905

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DigiPath Technology Company

USA . 1,680 parts In-Stock

1+ parts

$4.905

100+ parts

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10k+ parts

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1,680

$4.905

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Corphita

USA . 3,138 parts In-Stock

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3,138

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Parana Technologies

USA . 1,433 parts In-Stock

1+ parts

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100+ parts

$3.118

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1,433

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$3.118

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Overview

Unlock the potential of your designs with the M50FLW040AN1TP from STMicroelectronics, a leader in high-quality semiconductor solutions. This cutting-edge flash memory offers exceptional performance and reliability, perfect for a wide range of applications from consumer electronics to industrial automation. With its compact design and energy-efficient operation, you’ll benefit from faster access times and enhanced efficiency, ensuring your projects thrive in demanding environments. Trust STMicroelectronics for innovation that drives your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and cost-effectiveness, making this flash memory suitable for a wide range of applications.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient use of circuit board space, ideal for modern electronics.

Package Shape: RECTANGULAR

A rectangular package shape facilitates easy integration into various circuit layouts, promoting versatility in design.

Operating Mode: SYNCHRONOUS

Synchronous operation enables faster data transfer rates, improving overall system performance.

Nominal Supply Voltage / Vsup: 3.3 V

The standard 3.3 V supply voltage is compatible with most digital circuits, simplifying integration.

Power Supplies (V): 3.3

Consistent power supply requirements enhance reliability and ease of use in power management.

No. of Terminals: 40

A higher number of terminals allows for more flexibility in connections and functionalities.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

This package style supports miniaturization, making it suitable for space-constrained applications.

Maximum Operating Temperature: 70 °C

A high maximum operating temperature ensures reliability in various environmental conditions.

Organization: 512KX8

The 512KX8 organization supports efficient data management and access, optimizing performance.

Minimum Operating Temperature: 0 °C

Wide operating temperature range ensures functionality in diverse climates and environments.

No. of Sectors/Size: 48,5

Multiple sectors enhance data organization and efficiency, facilitating better memory management.

Terminal Position: DUAL

Dual terminal positioning simplifies PCB layout and improves the soldering process.

Maximum Seated Height: 1.2 mm

A low seated height contributes to space-saving designs while maintaining performance.

Width: 10 mm

Compact width ensures compatibility with various electronic devices and applications.

Minimum Supply Voltage (Vsup): 3 V

Lower supply voltage requirements improve energy efficiency and reduce power consumption.

Peak Reflow Temperature: 260 °C

This high peak reflow temperature tolerates standard soldering processes, ensuring reliability in assembly.

Type: NOR TYPE

NOR type flash memory offers faster read speeds, making it suitable for applications requiring quick data retrieval.

Length: 18.4 mm

Compact length facilitates integration into smaller devices while maximizing performance.

Programming Voltage (V): 3

Standard programming voltage simplifies operation and integration in typical electronic systems.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures optimal performance in typical consumer electronics environments.

Technology: CMOS

CMOS technology offers low power consumption and high integration levels, enhancing overall efficiency.

Parallel or Serial: PARALLEL

Parallel communication allows for higher data throughput, improving overall system performance.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve reliability in electrical connections.

Sector Size (Words): 4K,64K

Variable sector sizes provide flexibility for different applications, allowing for optimized memory usage.

Maximum Supply Current: 60 mA

Moderate supply current requirements enhance efficiency, making it suitable for battery-powered devices.

No. of Words: 524288 words

High word count ensures ample storage space for data-intensive applications.

Memory Width: 8

An 8-bit memory width allows for high data throughput, contributing to fast read and write speeds.

Terminal Pitch: 0.5 mm

Small terminal pitch aids in high-density PCB layouts, enhancing overall design compactness.

No. of Words Code: 512K

The 512K words capacity allows for significant data storage, suitable for a range of applications.

Command User Interface: YES

A user-friendly command interface simplifies memory management and operation for developers.

Ready or Busy: YES

The ready/busy feature aids in effective memory operation control, preventing potential data conflicts.

Maximum Supply Voltage (Vsup): 3.6 V

A reasonable maximum supply voltage range supports a variety of applications and designs.

Boot Block: TOP

Top boot block configuration optimizes system boot time, ensuring quick startup and operation.

Memory Density: 4194304 bit

High memory density of 4194304 bits allows for extensive data storage, meeting demanding application needs.

Memory IC Type: FLASH

FLASH memory provides non-volatile storage, retaining data without power, suitable for long-term data retention.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current consumption enhances battery life in portable devices, adding to energy efficiency.

Maximum Access Time: 11 ns

Fast access time of 11 ns supports high-speed applications, improving overall system responsiveness.

Technical Specifications

Flash Memory M50FLW040AN1TP attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G40

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

48,5

No. of Terminals:

40

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

4K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M50FLW040AN1TP Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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