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M50FLW040AN1TG

STMicroelectronics

M50FLW040AN1TG by STMicroelectronics

M50FLW040AN1TG from STMicroelectronics is a 4Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 11 ns. It operates in synchronous mode and comes in a compact SOIC package, ideal for embedded applications. With 512Kx8 organization and dual terminals, it ensures efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,035 parts In-Stock

1+ parts

-

100+ parts

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4,035

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Vyrian

USA . 3,400 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,400

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Anansix

USA . 187 parts In-Stock

1+ parts

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187

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 631 parts In-Stock

1+ parts

$4.946

100+ parts

-

1k+ parts

$4.451

10k+ parts

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631

$4.946

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$4.451

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MKK Technologies

India . 2,201 parts In-Stock

1+ parts

$9.300

100+ parts

-

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2,201

$9.300

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DigiPath Technology Company

USA . 2,201 parts In-Stock

1+ parts

$9.300

100+ parts

-

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2,201

$9.300

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Corphita

USA . 2,816 parts In-Stock

1+ parts

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2,816

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Parana Technologies

USA . 818 parts In-Stock

1+ parts

-

100+ parts

$5.914

1k+ parts

-

10k+ parts

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818

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$5.914

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Overview

Unlock the potential of your designs with the M50FLW040AN1TG Flash Memory from STMicroelectronics. Renowned for innovation and quality, STMicroelectronics delivers a reliable solution that enhances performance while ensuring energy efficiency. This compact, synchronous memory chip is perfect for a variety of applications, from consumer electronics to industrial systems. Experience swift access, durability, and seamless integration—elevating your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and protects the chip from environmental factors, making this product reliable for various applications.

Surface Mount: YES

Surface mount technology enables compact designs and allows for efficient use of board space, ideal for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape facilitates easier integration into standard PCB layouts, ensuring compatibility with many device designs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates, which is crucial for performance-sensitive applications.

Nominal Supply Voltage / Vsup (V): 3.3

A nominal supply voltage of 3.3V ensures compatibility with a wide range of microcontrollers and digital circuits, making integration simpler.

Power Supplies (V): 3.3

Operates at a standard power supply of 3.3V, ensuring low power consumption and efficient performance in battery-powered devices.

No. of Terminals: 40

The 40 terminals allow for a comprehensive interface with other components, providing ample connectivity options.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Thin profile design aids in space efficiency on PCBs, making this memory suitable for compact electronic devices.

Maximum Operating Temperature: 70 °C

Capable of operating at higher temperatures, this product is suitable for environments that experience elevated thermal conditions.

Organization: 512KX8

The memory organization facilitates easy data handling and storage, optimizing performance for various applications.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, this product is versatile for use in varying temperature conditions.

No. of Sectors/Size: 48,5

Multiple sectors allow for efficient data management and retrieval, enhancing the performance of storage applications.

Terminal Position: DUAL

Dual terminal positions offer flexible integration options for PCB layout, making assembly easier and more efficient.

Maximum Seated Height: 1.2 mm

The low seated height allows for compact designs while ensuring compatibility with slimline devices.

Width: 10 mm

The 10 mm width aids in efficient component layout and design, maximizing space on the PCB.

Minimum Supply Voltage (Vsup): 3 V

Operates with a minimum supply voltage of 3V, further enhancing versatility in power-sensitive applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures compatibility with advanced soldering processes, enhancing manufacturing reliability.

Type: NOR TYPE

NOR type memory offers advantages in quick read access times, making it suitable for applications requiring high-speed data retrieval.

Length: 18.4 mm

The compact length aids in space optimization on PCB designs and provides versatility for different applications.

Programming Voltage (V): 3

A programming voltage of 3V ensures compatibility with a wide range of electronic circuits while maintaining energy efficiency.

Temperature Grade: COMMERCIAL

Commercial grade temperature classification ensures reliability in typical consumer electronic applications.

Technology: CMOS

CMOS technology provides low power consumption, enhancing battery life in portable devices.

Parallel or Serial: PARALLEL

Parallel configuration allows for faster data transmission rates, greatly benefiting performance in high-speed applications.

Terminal Form: GULL WING

Gull-wing terminals facilitate easy soldering and mounting on PCBs, ensuring reliable connections.

Sector Size (Words): 4K,64K

Varied sector sizes accommodate different storage needs, optimizing performance for specific applications.

Maximum Supply Current: 60 mA

With a maximum supply current of 60 mA, this memory provides efficient power consumption, suitable for low-power designs.

No. of Words: 524288 words

Ample storage capacity of 524,288 words supports extensive data applications, beneficial for demanding tasks.

Memory Width: 8

An 8-bit memory width provides a good balance between performance and efficiency, well-suited for a range of applications.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm allows for dense packing on PCBs, saving space in compact designs.

No. of Words Code: 512K

The 512K words capacity supports a variety of applications, from simple projects to more complex systems.

Command User Interface: YES

The built-in command user interface simplifies control and programming, making it user-friendly for developers.

Ready or Busy: YES

The ready/busy feature allows for effective communication with the system, ensuring synchronization during operations.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V allows flexibility in power supply options while ensuring stable operation.

Boot Block: TOP

Top boot block feature enables quick and easy access to boot code, essential for system initialization.

Memory Density: 4194304 bit

High memory density provides substantial data storage capabilities, meeting the needs of advanced applications.

Memory IC Type: FLASH

Being a FLASH memory type ensures non-volatility and data retention even when power is off, enhancing data security.

Maximum Standby Current: 0.0001 Amp

With a maximum standby current of 0.0001 Amp, this chip is highly power-efficient, ideal for battery-powered devices.

Maximum Access Time: 11 ns

An access time of 11 ns delivers quick read operations, which is critical for applications requiring rapid data access.

Technical Specifications

Flash Memory M50FLW040AN1TG attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G40

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

48,5

No. of Terminals:

40

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

4K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M50FLW040AN1TG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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