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M50FLW040AN5G

STMicroelectronics

M50FLW040AN5G by STMicroelectronics

M50FLW040AN5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a thin SO package, ideal for compact applications. With 512Kx8 organization, it's perfect for embedded systems requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,760 parts In-Stock

1+ parts

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6,760

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Digiode

USA . 3,187 parts In-Stock

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3,187

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Anansix

USA . 360 parts In-Stock

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360

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 5 parts In-Stock

1+ parts

$3.191

100+ parts

-

1k+ parts

$2.872

10k+ parts

-

5

$3.191

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$2.872

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MKK Technologies

India . 2,216 parts In-Stock

1+ parts

$6.000

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2,216

$6.000

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DigiPath Technology Company

USA . 2,216 parts In-Stock

1+ parts

$6.000

100+ parts

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2,216

$6.000

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AZTECH Wire

Italy . 365 parts In-Stock

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$16.500

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365

$16.500

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Microchip USA

USA . 4,451 parts In-Stock

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4,451

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Corphita

USA . 2,676 parts In-Stock

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2,676

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Parana Technologies

USA . 987 parts In-Stock

1+ parts

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100+ parts

$3.815

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987

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$3.815

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Overview

Unlock the potential of your next project with the M50FLW040AN5G flash memory from STMicroelectronics, a leader in innovative semiconductor solutions. This compact and reliable memory offers exceptional performance for a wide range of applications—from consumer electronics to industrial devices—enhancing efficiency and speed. With its robust design and superior quality assurance, you can trust that this memory solution will elevate your products, delivering unmatched value and reliability that keeps your business ahead of the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy package material protects the chip from environmental factors, enhancing the reliability and longevity of the product.

Surface Mount: YES

Being a surface-mount device allows for more efficient use of space on printed circuit boards and enables automated assembly, thus reducing manufacturing costs.

Package Shape: RECTANGULAR

The rectangular shape provides a compact form factor, facilitating easy placement and integration onto PCBs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfers, improving performance in high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

A nominal voltage of 3.3V ensures compatibility with a wide range of modern electronic devices and helps to reduce power consumption.

Power Supplies (V): 3.3

Supports standard power supply levels, making it easier to integrate into existing systems.

No. of Terminals: 40

With 40 terminals, this memory chip provides ample connections for data and power, enhancing functionality while maintaining a compact size.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile contribute to lower profile designs, essential for portable and space-constrained applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this memory chip is suitable for a variety of environments, including industrial applications.

Organization: 512KX8

An organization of 512Kx8 provides efficient data storage and retrieval, making it suitable for a range of applications requiring reliable memory.

Minimum Operating Temperature: -20 °C

The ability to operate at temperatures as low as -20 °C ensures functionality in colder environments.

No. of Sectors/Size: 8

Dividing memory into sectors allows for better organization of data, improving performance and reliability in data management.

Terminal Position: DUAL

Dual terminal position enhances connectivity options and provides flexibility for various PCB layouts.

Maximum Seated Height: 1.2 mm

A maximum seated height of only 1.2mm allows for streamlined designs where space is a constraint.

Width: 8 mm

An 8mm width ensures that it can fit into tight spaces on circuit boards without compromising performance.

Minimum Supply Voltage (Vsup): 3 V

The ability to operate at a minimum supply voltage of 3V further broadens compatibility with various power supply configurations.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C is suitable for modern soldering techniques, ensuring a reliable and robust assembly.

Type: NOR TYPE

NOR flash memory allows for random access to data, making it ideal for applications requiring quick read and write operations.

Length: 18.4 mm

At 18.4mm in length, it remains compact while providing sufficient surface area for connections and integration.

Programming Voltage (V): 3

A programming voltage of 3V enhances safety and reduces the risk of voltage-related damage during operations.

Technology: CMOS

CMOS technology allows for low power consumption and high integration density, making this product energy efficient.

Parallel or Serial: PARALLEL

Parallel operation enables faster data transfer rates, making it suitable for high-speed requirements.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and provide strong mechanical connections on the PCB.

Maximum Supply Current: 60 mA

A maximum supply current of 60 mA indicates a moderate energy requirement, suitable for battery-operated devices.

No. of Words: 524288 words

With a capacity of 524,288 words, this memory chip can store significant amounts of data, making it ideal for various applications.

Memory Width: 8

An 8-bit memory width enables efficient data processing, essential for applications requiring quick access to data.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5mm allows for a compact design while ensuring reliability in connections.

No. of Words Code: 512K

Providing 512K words of memory code is important for applications needing moderate to high memory capacity.

Command User Interface: YES

A user-friendly command interface simplifies the design and integration process, reducing development time.

Ready or Busy: YES

Indicating 'Ready' or 'Busy' status helps manage data transactions efficiently, enhancing overall system reliability.

Maximum Supply Voltage (Vsup): 3.6 V

Operating up to 3.6V ensures compatibility with various power supply scenarios while maintaining stable performance.

Memory Density: 4194304 bit

With a memory density of 4,194,304 bits, it offers a substantial storage capacity suitable for complex applications.

Memory IC Type: FLASH

As a flash memory type, it retains information without power, making it ideal for use in non-volatile storage applications.

Maximum Standby Current: 0.0001 Amp

A very low maximum standby current of 0.0001 Amperes signifies excellent power efficiency, beneficial for battery-powered devices.

Maximum Access Time: 11 ns

A maximum access time of only 11 nanoseconds ensures rapid data retrieval, critical for applications requiring responsive performance.

Technical Specifications

Flash Memory M50FLW040AN5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G40

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

40

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M50FLW040AN5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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