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MT25QL02GCBB8E12-0SITTR

Micron Technology

MT25QL02GCBB8E12-0SITTR by Micron Technology

Micron Technology's MT25QL02GCBB8E12-0SITTR is a 256MX8 NOR flash memory with 133 MHz clock frequency, 3V programming voltage. Ideal for industrial applications, it offers 100K write/erase cycles, SPI serial bus type, and operates in a temperature range of -40 to 85°C.

Median Price

$17.058

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$14.900

7,500

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$14.900

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$19.216

2,500

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$19.216

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 15,400 parts In-Stock

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15,400

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Vyrian

USA . 8,033 parts In-Stock

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8,033

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Martec Srl

Italy . 5,000 parts In-Stock

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5,000

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IBS Electronics

USA . 5,000 parts In-Stock

1+ parts

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$19.370

5,000

-

-

-

$19.370

BCID Electronics Ltd.

Israel . 2,500 parts In-Stock

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2,500

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Digiode

USA . 284 parts In-Stock

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284

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Nova Conductors

Japan . 47 parts In-Stock

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47

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Distributors (Availability)

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Corohmni

South Africa . 1,172 parts In-Stock

1+ parts

$3.555

100+ parts

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1,172

$3.555

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Ampacity Inc.

Singapore . 2,260 parts In-Stock

1+ parts

$16.330

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2,260

$16.330

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Semicontronic

India . 2,029 parts In-Stock

1+ parts

$16.330

100+ parts

$15.922

1k+ parts

$15.840

10k+ parts

-

2,029

$16.330

$15.922

$15.840

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AZTECH Wire

Italy . 295 parts In-Stock

1+ parts

$19.400

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295

$19.400

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Continental Prestige Electronics

USA . 5,084 parts In-Stock

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5,084

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Argo Parts USA

USA . 4,979 parts In-Stock

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4,979

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Corphita

USA . 2,135 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Overview

Enhance your electronic devices with the MT25QL02GCBB8E12-0SITTR by Micron Technology, a top-tier flash memory solution designed to deliver unparalleled performance and reliability. Manufactured by industry leader Micron Technology, this product offers cutting-edge technology and exceptional quality. Ideal for a wide range of applications, this flash memory provides fast data access, efficient operation, and seamless integration. Upgrade your devices today with the MT25QL02GCBB8E12-0SITTR and experience the difference in speed, efficiency, and overall performance. Unlock the potential of your devices with Micron Technology's innovative flash memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it easy to handle and resistant to damage.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient communication in data transfer, enhancing overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal voltage of 3V makes the flash memory energy-efficient and compatible with various systems.

Memory Density: 2147483648 bit

With a high memory density, this flash memory allows for storing a large amount of data in a compact size, ideal for applications requiring a lot of storage space.

Maximum Clock Frequency (fCLK): 133 MHz

The high maximum clock frequency enables fast read and write operations, improving overall performance of the flash memory.

Endurance: 100000 Write/Erase Cycles

With a high endurance rating, this flash memory can withstand frequent write and erase cycles without degradation, ensuring long-term reliability.

Serial Bus Type: SPI

Utilizing the Serial Peripheral Interface (SPI) allows for easy integration with a wide range of devices, offering flexibility and compatibility.

Technical Specifications

Flash Memory MT25QL02GCBB8E12-0SITTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Boot Block:

BOTTOM/TOP

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00013 Amp

Maximum Supply Current:

94 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QL02GCBB8E12-0SITTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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