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M50FLW040AK5TG

STMicroelectronics

M50FLW040AK5TG by STMicroelectronics

M50FLW040AK5TG from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11 ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,372 parts In-Stock

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Anansix

USA . 2,725 parts In-Stock

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2,725

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Vyrian

USA . 963 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 333 parts In-Stock

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333

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,574 parts In-Stock

1+ parts

$4.482

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$4.034

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$4.482

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$4.034

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MKK Technologies

India . 347 parts In-Stock

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$8.429

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347

$8.429

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DigiPath Technology Company

USA . 347 parts In-Stock

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$8.429

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347

$8.429

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Component Stockers USA

USA . 767 parts In-Stock

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$99.990

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767

$99.990

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Perfect Parts

USA . 4,308 parts In-Stock

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Corphita

USA . 2,754 parts In-Stock

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Parana Technologies

USA . 1,923 parts In-Stock

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$5.359

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$5.359

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Cyclops Electronics Ltd (Excess)

UK . 1,923 parts In-Stock

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1,923

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Glotronic Ltd.

UK . 1,272 parts In-Stock

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Overview

Unlock a world of innovation with the M50FLW040AK5TG from STMicroelectronics—your go-to solution for reliable and efficient flash memory. Crafted with precision, this high-performance NOR flash offers exceptional speed and robust durability, perfect for diverse applications ranging from consumer electronics to industrial systems. Trust in ST's legacy of quality to enhance your designs, streamline production, and elevate your products to the next level!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors.

Surface Mount: YES

The surface mount capability allows for efficient use of space on PCBs and simplifies assembly.

Package Shape: RECTANGULAR

The rectangular shape is optimized for fitting compactly within electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances data transfer speeds and improves overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

The standard supply voltage of 3.3V is compatible with a wide range of systems and reduces design costs.

Power Supplies (V): 3.3

Operating on 3.3V minimizes power consumption, making it suitable for battery-operated devices.

No. of Terminals: 32

The 32 terminals provide ample connectivity options, ensuring versatility in various applications.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging enhances thermal performance and simplifies mounting on circuit boards.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature allows for use in demanding environments without compromising performance.

Organization: 512KX8

The 512Kx8 organization provides a robust structure for data storage, facilitating easy access to information.

Minimum Operating Temperature: -20 °C

Its ability to operate at low temperatures ensures reliable performance in colder environments.

No. of Sectors/Size: 8

Multiple sectors provide flexible data organization and management, streamlining access speeds.

Terminal Finish: MATTE TIN

The matte tin finish improves solderability and enhances the longevity of electrical connections.

Terminal Position: QUAD

Quad terminal positioning can enhance signal integrity and minimize interference for reliable operation.

Maximum Seated Height: 3.56 mm

A compact seated height allows for more efficient use of space in compact electronic devices.

Width: 11.43 mm

A narrow width allows for flexibility in PCB layout design, aiding in miniaturization.

Minimum Supply Voltage (Vsup): 3 V

Supports a minimum voltage of 3V which provides flexibility in various power supply configurations.

Type: NOR TYPE

NOR type memory offers fast random access, making it suitable for high-speed applications.

Length: 13.97 mm

Compact length is ideal for applications with space constraints while maintaining sufficient functionality.

Programming Voltage (V): 3

A programming voltage of 3V is energy-efficient and aligns with standard operating conditions for many systems.

Technology: CMOS

CMOS technology enhances power efficiency and integrates well with modern digital designs.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data transfer compared to serial counterparts, speeding up operations.

Terminal Form: J BEND

J-bend terminals promote better mechanical strength and secure connections on the PCB.

Maximum Supply Current: 60 mA

A maximum supply current of 60 mA ensures adequate power for intensive operations while maintaining efficiency.

No. of Words: 524288 words

524288 words of storage provides a substantial amount of data retention for diverse applications.

Memory Width: 8

An 8-bit memory width is suitable for handling standard data sizes found in many modern applications.

Terminal Pitch: 1.27 mm

The standard terminal pitch aids in compatibility with various mounting technologies and assembly processes.

No. of Words Code: 512K

512K words code offers sufficient storage for embedded systems, facilitating application flexibility.

Command User Interface: YES

The user-friendly command interface simplifies integration into systems and enhances user experience.

Ready or Busy: YES

The ready/busy indicator enables efficient system operation management by indicating device status.

Maximum Supply Voltage (Vsup): 3.6 V

Supports up to 3.6V, providing flexibility for higher performance applications without compromising stability.

Memory Density: 4194304 bit

A high memory density makes it suitable for data-intensive applications, ensuring ample space for information.

Memory IC Type: FLASH

As a flash memory type, it allows for quick erasure and reprogramming, ideal for applications needing frequent updates.

Maximum Standby Current: 0.0001 Amp

Very low standby current minimizes power consumption when inactive, making it ideal for energy-efficient designs.

Maximum Access Time: 11 ns

Fast access time of 11 ns ensures swift data retrieval, improving overall system responsiveness and efficiency.

Technical Specifications

Flash Memory M50FLW040AK5TG attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

3.56 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50FLW040AK5TG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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