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M50FLW040AK5TP

STMicroelectronics

M50FLW040AK5TP by STMicroelectronics

M50FLW040AK5TP from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11 ns, operates b/w -20 °C to 85 °C, and is ideal for embedded applications requiring fast data storage. With its compact chip carrier design, it supports efficient surface mounting in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,616 parts In-Stock

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3,616

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Anansix

USA . 1,887 parts In-Stock

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1,887

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Digiode

USA . 288 parts In-Stock

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288

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 193 parts In-Stock

1+ parts

$3.062

100+ parts

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1k+ parts

$2.756

10k+ parts

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193

$3.062

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$2.756

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MKK Technologies

India . 775 parts In-Stock

1+ parts

$5.757

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775

$5.757

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DigiPath Technology Company

USA . 775 parts In-Stock

1+ parts

$5.757

100+ parts

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775

$5.757

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Corphita

USA . 1,487 parts In-Stock

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1,487

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Parana Technologies

USA . 1,045 parts In-Stock

1+ parts

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100+ parts

$3.661

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1,045

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$3.661

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Overview

Elevate your designs with the M50FLW040AK5TP flash memory from STMicroelectronics—a trusted leader in innovative semiconductor solutions. This high-performance NOR flash memory, crafted with precision, ensures reliability and efficiency in a compact package. Ideal for applications ranging from consumer electronics to automotive systems, it delivers exceptional speed and low power consumption, empowering you to create cutting-edge technology while maximizing value for your customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product lightweight and resistant to moisture, ensuring durability and reliability in various environments.

Surface Mount: YES

Being surface mount allows for easier integration into compact designs, saving board space and enhancing design flexibility.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization on circuit boards, optimizing layout and electrical characteristics.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer rates and overall performance, making it suitable for high-speed applications.

Nominal Supply Voltage / Vsup: 3.3 V

Operating at a nominal voltage of 3.3 V ensures compatibility with most modern electronic devices, providing a balance between performance and power consumption.

Power Supplies (V): 3.3 V

Designed to operate on standard 3.3 V power supplies, this product is easy to integrate into existing systems without requiring additional voltage regulation.

No. of Terminals: 32

A higher number of terminals improves interconnection flexibility and allows for more complex circuit designs.

Package Style (Meter): CHIP CARRIER

The chip carrier style offers enhanced thermal management and improved electrical performance, essential for high-performance applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product can function reliably in demanding environments, making it suitable for automotive and industrial applications.

Organization: 512KX8

The 512Kx8 organization allows for efficient data storage and retrieval, suitable for applications requiring substantial memory capacity.

Minimum Operating Temperature: -20 °C

Withstanding minimum temperatures of -20 °C extends its usability in colder climates, increasing its versatility across applications.

No. of Sectors/Size: 8

Dividing memory into sectors enhances data organization and management, allowing for efficient data handling and system performance.

Terminal Finish: MATTE TIN

Matte tin finishes provide excellent solderability and corrosion resistance, contributing to greater reliability in electrical connections.

Terminal Position: QUAD

Quad terminal positioning allows for enhanced electrical performance and reduces the footprint, making it ideal for high-density applications.

Maximum Seated Height: 3.56 mm

A low maximum seated height supports designs requiring thin profiles, making it suitable for slim device designs.

Width: 11.43 mm

A compact width contributes to smaller PCB layouts, enabling high-density applications and rugged designs.

Minimum Supply Voltage (Vsup): 3 V

Operating with a minimum supply voltage of 3 V allows for flexibility in power supply design, accommodating a range of devices.

Type: NOR TYPE

The NOR type architecture is ideal for applications needing fast read speeds and excellent random access performance.

Length: 13.97 mm

Compact length allows for space-efficient integration in tighter PCB layouts, catering to small device designs.

Programming Voltage (V): 3

Low programming voltage reduces power consumption during write operations, enhancing overall energy efficiency.

Technology: CMOS

CMOS technology provides low power consumption, making this product suitable for battery-powered and energy-sensitive applications.

Parallel or Serial: PARALLEL

Parallel communication allows for higher data throughput, making it ideal for high-speed applications requiring fast access to memory.

Terminal Form: J BEND

J bend terminals facilitate easier handling and mounting on PCBs, improving manufacturing efficiency.

Maximum Supply Current: 60 mA

With a maximum supply current of 60 mA, this product balances power efficiency and performance, suitable for various applications.

No. of Words: 524288 words

A memory capacity of 524,288 words allows for the storage of substantial data, catering to complex applications needing large memory.

Memory Width: 8

An 8-bit memory width supports efficient data handling and is compatible with various microcontrollers and processors.

Terminal Pitch: 1.27 mm

A 1.27 mm terminal pitch supports finer pitch layouts, ideal for modern, compact designs.

No. of Words Code: 512K

The 512K word code provides ample storage while maintaining a focus on efficiency for a wide range of applications.

Command User Interface: YES

The presence of a command user interface simplifies user interactions and enhances the ease of use in system applications.

Ready or Busy: YES

With a ready or busy indication, this product allows for effective status monitoring in real-time applications.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6 V accommodates a range of standard power supply voltages, making it versatile for different systems.

Memory Density: 4194304 bit

High memory density of 4,194,304 bits allows for significant data storage capabilities, essential for high-performance applications.

Memory IC Type: FLASH

As a FLASH memory IC, it offers rapid data access and easy re-programmability, suitable for a variety of data storage applications.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current minimizes power consumption when inactive, enhancing energy efficiency in battery-powered devices.

Maximum Access Time: 11 ns

Fast maximum access time of 11 ns ensures quick data retrieval, crucial for performance-sensitive applications.

Technical Specifications

Flash Memory M50FLW040AK5TP attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

3.56 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50FLW040AK5TP Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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