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MT25QU128ABA1EW7-0SIT

Micron Technology

MT25QU128ABA1EW7-0SIT by Micron Technology

Micron Technology's MT25QU128ABA1EW7-0SIT is a 128M Flash Memory IC with 134217728 bit memory density. Operating at 166 MHz clock frequency, it has a low 0.8 mm seated height and operates in industrial temperature grade applications. With synchronous operation and serial interface, this small outline package is ideal for high-speed data storage needs.

Median Price

$3.668

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,667 parts In-Stock

1+ parts

$2.840

100+ parts

$2.360

1k+ parts

$2.170

10k+ parts

$2.010

3,667

$2.840

$2.360

$2.170

$2.010

Newark

USA . 3,209 parts In-Stock

1+ parts

$3.360

100+ parts

$2.070

1k+ parts

$1.680

10k+ parts

-

3,209

$3.360

$2.070

$1.680

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Arrow

USA . 11,009 parts In-Stock

1+ parts

$3.975

100+ parts

-

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11,009

$3.975

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Farnell

UK . 1,861 parts In-Stock

1+ parts

$5.897

100+ parts

$3.778

1k+ parts

$3.625

10k+ parts

-

1,861

$5.897

$3.778

$3.625

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Element14

Singapore . 2,938 parts In-Stock

1+ parts

$8.960

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2,938

$8.960

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Verical

USA . 11,009 parts In-Stock

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11,009

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Future Electronics

Canada . 8,820 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.360

10k+ parts

$1.330

8,820

-

-

$1.360

$1.330

EBV Elektronik

Germany . 2,940 parts In-Stock

1+ parts

-

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2,940

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,156 parts In-Stock

1+ parts

$3.211

100+ parts

-

1k+ parts

-

10k+ parts

-

2,156

$3.211

-

-

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$3.400

100+ parts

-

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-

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500

$3.400

-

-

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NAC Semi

USA . 6,331 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$3.610

6,331

-

-

-

$3.610

Cyclops Electronics Ltd

UK . 6,134 parts In-Stock

1+ parts

-

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6,134

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Vyrian

USA . 4,289 parts In-Stock

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4,289

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

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4,000

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BCID Electronics Ltd.

Israel . 3,530 parts In-Stock

1+ parts

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3,530

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Component Sense

UK . 2,226 parts In-Stock

1+ parts

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2,226

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ComSIT Distribution GmbH

Germany . 219 parts In-Stock

1+ parts

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219

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Connector Distribution Corp

USA . 10 parts In-Stock

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10

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Right Parts Inc.

USA . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$2.197

100+ parts

$2.087

1k+ parts

$2.087

10k+ parts

-

1,000

$2.197

$2.087

$2.087

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Semicontronic

India . 4,612 parts In-Stock

1+ parts

$2.210

100+ parts

$2.155

1k+ parts

$2.144

10k+ parts

-

4,612

$2.210

$2.155

$2.144

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Corphita

USA . 1,957 parts In-Stock

1+ parts

$3.042

100+ parts

-

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1,957

$3.042

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$3.332

100+ parts

-

1k+ parts

$3.199

10k+ parts

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500

$3.332

-

$3.199

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Argo Parts USA

USA . 1,003 parts In-Stock

1+ parts

$3.400

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1,003

$3.400

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Continental Prestige Electronics

USA . 1,942 parts In-Stock

1+ parts

$3.740

100+ parts

$2.570

1k+ parts

-

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1,942

$3.740

$2.570

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Corohmni

South Africa . 421 parts In-Stock

1+ parts

$4.438

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421

$4.438

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Aztec Data Supply Inc.

USA . 3,439 parts In-Stock

1+ parts

$4.740

100+ parts

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3,439

$4.740

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Epart123

USA . 38,220 parts In-Stock

1+ parts

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$5.770

10k+ parts

$5.770

38,220

-

-

$5.770

$5.770

Futuretech Components

Singapore . 22,953 parts In-Stock

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22,953

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Perfect Parts

USA . 10,018 parts In-Stock

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10,018

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A-Z Elektronik GmbH

Germany . 8,920 parts In-Stock

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8,920

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Kepictronics

USA . 2,940 parts In-Stock

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2,940

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Overview

Experience lightning-fast data transfers and reliable storage with the MT25QU128ABA1EW7-0SIT from Micron Technology. Known for their top-notch quality and cutting-edge technology, Micron delivers flash memory solutions that meet the demands of modern applications. Whether you're a gamer, photographer, or professional in need of secure data storage, this product offers high performance, low power consumption, and industrial-grade durability. Say goodbye to slow load times and hello to seamless data access with Micron Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the flash memory, ensuring a longer lifespan.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low voltage of 1.8V, making it energy-efficient and suitable for power-sensitive applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and more efficient performance.

Memory Density: 134217728 bit

High memory density of 134217728 bits allows for storing a large amount of data in a compact form factor.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can function reliably in various environments.

Technical Specifications

Flash Memory MT25QU128ABA1EW7-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

1.8

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5 mm

Trade Compliance

MT25QU128ABA1EW7-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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