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KLM8G1GETF-B0410

Samsung

KLM8G1GETF-B0410 by Samsung

Samsung's KLM8G1GETF-B0410 is a 8GX8 MLC NAND flash memory with 68719476736 bit density. Operating at 200 MHz, it has a very thin profile and fine pitch package style suitable for high-speed applications. With a voltage range of 1.7V to 1.95V, this CMOS technology chip is ideal for devices requiring fast data storage and retrieval.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,413 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Semicontronic

India . 975 parts In-Stock

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$2.000

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$1.950

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$1.940

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975

$2.000

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Corohmni

South Africa . 428 parts In-Stock

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$4.999

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Aztec Data Supply Inc.

USA . 3,108 parts In-Stock

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$5.010

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Advanced Electronics

New Zealand . 4,178 parts In-Stock

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$5.193

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$4.934

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$4.934

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AZTECH Wire

Italy . 222 parts In-Stock

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$7.428

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Ampacity Inc.

Singapore . 145 parts In-Stock

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$15.000

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Argo Parts USA

USA . 4,161 parts In-Stock

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Continental Prestige Electronics

USA . 3,583 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Experience lightning-fast data transfer speeds and reliable storage with the Samsung KLM8G1GETF-B0410 Flash Memory. Manufactured by Samsung, a leader in technology innovation, this memory device offers exceptional quality and performance. Ideal for a wide range of applications, this product provides seamless operation in synchronous mode with a nominal supply voltage of 1.8V. With a compact rectangular package design and 153 terminals, this Flash Memory is perfect for any project requiring high-speed data processing. Trust Samsung to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protects the flash memory.

Surface Mount:

YES - Allows for easy and efficient integration onto circuit boards.

No. of Functions:

1 - Streamlined design simplifies operation and improves efficiency.

Package Shape:

RECTANGULAR - Standard shape for easy fitting in various devices.

Operating Mode:

SYNCHRONOUS - Ensures fast and efficient data transfer.

Nominal Supply Voltage / Vsup (V):

1.8 - Efficient power consumption for longer battery life.

No. of Terminals:

153 - Provides multiple connection points for enhanced functionality.

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH - Space-saving design for compact devices.

Maximum Operating Temperature:

85 °C - Can withstand high temperatures for reliable performance.

Organization:

8GX8 - Efficient organization for quick access to stored data.

Minimum Operating Temperature:

25 °C - Can function in cold environments without issues.

Terminal Position:

BOTTOM - Simplifies installation and connection to other components.

Maximum Seated Height:

0.8 mm - Low profile design for slim devices.

Maximum Clock Frequency (fCLK):

200 MHz - Supports high-speed data processing.

Width:

11.5 mm - Compact size for easy integration in tight spaces.

Minimum Supply Voltage (Vsup):

1.7 V - Operates efficiently with low power supply.

Type:

MLC NAND TYPE - Provides high storage capacity and reliability.

Length:

13 mm - Standard length for compatibility with various devices.

Programming Voltage (V):

1.8 - Allows for easy and efficient programming of the memory.

Technology:

CMOS - Uses advanced technology for improved performance.

Parallel or Serial:

PARALLEL - Enables fast data transfer between memory and processor.

Terminal Form:

BALL - Secure connection for reliable data transfer.

No. of Words:

8589934592 words - High storage capacity for storing large amounts of data.

Memory Width:

8 - Supports efficient data transfer with a wide memory width.

Terminal Pitch:

0.5 mm - Small pitch for compact design and space-saving.

No. of Words Code:

8G - Efficient storage organization for quick access to data.

Maximum Supply Voltage (Vsup):

1.95 V - Withstands voltage fluctuations for consistent performance.

Memory Density:

68719476736 bit - High memory density for storing vast amounts of data.

Memory IC Type:

FLASH - Reliable flash memory technology for data storage.

Technical Specifications

Flash Memory KLM8G1GETF-B0410 attributes and parameters. Explore more Flash Memory devices from Samsung

Specs

Additional Features:

ALSO OPERATES @ 3V SUP NOM

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

1.8

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Type:

MLC NAND TYPE

Width:

11.5 mm

Trade Compliance

KLM8G1GETF-B0410 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Samsung

Samsung Electronics Co., Ltd. engages in the consumer electronics, information technology and mobile communications, and device solutions businesses worldwide. The company offers smartphones, tablets, watches, and accessories; TVs, projectors, and sound devices; home appliances, including refrigerators, washing machines and dryers, vacuum cleaners, cooking appliances, dishwashers, air conditioners, and air purifiers; monitors, and memory and storage products; displays, and smart and LED signages; and other accessories. It also engages in technology, venture capital investments, cloud services, network devices installation and optimization, semiconductor equipment services, digital advertising platforms, marketing, consulting, connected services, logistics, financing, and software design activities; toll processing of display panels and semiconductors; development and sale of network solutions; manufactures semiconductors and food; provision of repair services for electronic devices and enterprise automation solutions; and development and supply of semiconductor process defect and quality control software. The company serves various industries, including education, retail, and finance, as well as government and corporate customers. Samsung Electronics Co., Ltd. was incorporated in 1969 and is based in Suwon-si, South Korea.

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