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M50LPW116N5G

STMicroelectronics

M50LPW116N5G by STMicroelectronics

M50LPW116N5G from STMicroelectronics is a 2M x 8 NOR Flash memory with a max access time of 11 ns and operates at a nominal voltage of 3.3V. It features a compact SOIC package, ideal for space-constrained applications. This synchronous device supports dual terminals and offers robust performance in various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,017 parts In-Stock

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3,017

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Digiode

USA . 2,609 parts In-Stock

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2,609

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Anansix

USA . 644 parts In-Stock

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644

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Prism Electronics

USA . 106 parts In-Stock

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106

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Cyclops Electronics Ltd

UK . 10 parts In-Stock

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10

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,849 parts In-Stock

1+ parts

$4.999

100+ parts

-

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$4.499

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1,849

$4.999

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$4.499

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MKK Technologies

India . 809 parts In-Stock

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$9.401

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809

$9.401

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DigiPath Technology Company

USA . 809 parts In-Stock

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$9.401

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809

$9.401

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AZTECH Wire

Italy . 1,201 parts In-Stock

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$15.950

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$15.950

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Kepictronics

USA . 12,600 parts In-Stock

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Corphita

USA . 2,557 parts In-Stock

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2,557

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Assy Fe

Spain . 1,000 parts In-Stock

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Microchip USA

USA . 227 parts In-Stock

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Perfect Parts

USA . 119 parts In-Stock

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119

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Parana Technologies

USA . 91 parts In-Stock

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$5.977

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91

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$5.977

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Overview

Unlock exceptional performance with the M50LPW116N5G Flash Memory from STMicroelectronics, a leader in innovation and reliability. Designed for seamless integration into your projects, this compact solution offers robust data storage for various applications, including IoT devices, automotive systems, and consumer electronics. Experience superior speed, energy efficiency, and the peace of mind that comes from using a trusted manufacturer, ensuring your designs are future-proof and high-quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material offers good protection and reliability, making this flash memory suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact design and easy integration into modern electronic devices.

Package Shape: RECTANGULAR

The rectangular form factor is standard, providing ease of placement on PCBs and efficient use of space.

Operating Mode: SYNCHRONOUS

Synchronous operation provides higher performance and faster data transfer rates, enhancing overall system efficiency.

Nominal Supply Voltage / Vsup: 3.3 V

This nominal voltage is commonly supported in numerous electronic systems, ensuring compatibility and stability.

Power Supplies (V): 3.3 V

Working efficiently at a power supply of 3.3V makes it suitable for low-power applications.

No. of Terminals: 40

With 40 terminals, it offers sufficient connectivity options for various configurations.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline, thin profile makes this flash memory ideal for space-constrained applications.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature ensures reliability in demanding environments.

Organization: 2MX8

The 2M x 8 organization allows efficient data storage and access patterns for various applications.

Minimum Operating Temperature: -20 °C

The operating temperature range from -20 °C to 85 °C makes it suitable for outdoor and industrial applications.

No. of Sectors/Size: 1, 2, 1, 30, 16

This flexible sector configuration enables efficient data management and storage optimization.

Terminal Finish: TIN

Tin terminal finish ensures good solderability and aids in maintaining conductivity over time.

Terminal Position: DUAL

Dual terminal positioning enhances assembly flexibility, which is beneficial for various PCB layouts.

Maximum Seated Height: 1.2 mm

The low seated height allows for a slim design, crucial for modern electronic devices where space is at a premium.

Width: 10 mm

The compact width is ideal for fitting into tight spaces within consumer electronics.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage of 3 V allows for power-efficient designs in portable and battery-operated devices.

Type: NOR TYPE

NOR type memory is known for its fast read speeds, making it an excellent choice for applications requiring quick data access.

Length: 18.4 mm

The compact length aids in reducing overall PCB size, which is critical for modern device design.

Programming Voltage (V): 3 V

A programming voltage of 3V supports low-power operations, making it energy-efficient.

Technology: CMOS

CMOS technology provides low power consumption and high performance, suitable for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel configuration allows for faster data transfer rates, enhancing the performance of the overall system.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve mechanical stability during use.

Sector Size (Words): 16K, 8K, 32K, 64K, 4K

Various sector sizes provide flexibility in memory allocation, allowing tailored use for specific applications.

Maximum Supply Current: 60 mA

With a maximum supply current of 60 mA, this flash memory balances performance and power efficiency.

No. of Words: 2097152 words

A capacity of 2,097,152 words allows for substantial data storage, catering to demanding applications.

Memory Width: 8

An 8-bit memory width enables efficient data handling and aligns with many standard data bus widths.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch allows for high-density PCB layouts, which is essential for modern electronic designs.

No. of Words Code: 2M

With a word code of 2M, this product is equipped to handle large amounts of data effectively.

Command User Interface: YES

The presence of a command user interface simplifies programming and user interaction, enhancing ease of use.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6 V allows for some flexibility in powering the device while maintaining safe operational limits.

Boot Block: TOP

A top boot block configuration simplifies firmware storage and management in embedded systems.

Memory Density: 16777216 bit

With a high memory density of 16M bits, this flash memory can efficiently handle large applications with substantial data requirements.

Memory IC Type: FLASH

Flash memory type provides non-volatile storage, retaining data without power, ideal for numerous applications.

Maximum Standby Current: 0.0001 Amp

An extremely low standby current enhances energy efficiency, making it ideal for battery-powered devices.

Maximum Access Time: 11 ns

A maximum access time of 11 ns enables fast data retrieval, supporting high-performance applications.

Technical Specifications

Flash Memory M50LPW116N5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G40

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,30,16

No. of Terminals:

40

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

2MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K,4K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M50LPW116N5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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