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M50LPW020K1

STMicroelectronics

M50LPW020K1 by STMicroelectronics

M50LPW020K1 from STMicroelectronics is a 256Kx8 NOR flash memory with a max access time of 11 ns, operating at 3.3V. It features a compact chip carrier package and supports synchronous operation. Ideal for embedded systems requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,439 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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4,439

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Vyrian

USA . 3,428 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,428

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Anansix

USA . 2,686 parts In-Stock

1+ parts

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2,686

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,577 parts In-Stock

1+ parts

$3.081

100+ parts

-

1k+ parts

$2.773

10k+ parts

-

1,577

$3.081

-

$2.773

-

MKK Technologies

India . 1,786 parts In-Stock

1+ parts

$5.794

100+ parts

-

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-

10k+ parts

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1,786

$5.794

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DigiPath Technology Company

USA . 1,786 parts In-Stock

1+ parts

$5.794

100+ parts

-

1k+ parts

-

10k+ parts

-

1,786

$5.794

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Parana Technologies

USA . 1,119 parts In-Stock

1+ parts

-

100+ parts

$3.684

1k+ parts

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10k+ parts

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1,119

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$3.684

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Corphita

USA . 50 parts In-Stock

1+ parts

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50

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Overview

Unlock exceptional performance with the M50LPW020K1 from STMicroelectronics, a trusted leader in flash memory solutions. Engineered for reliability and efficiency, this NOR flash memory delivers fast access times and low power consumption, making it ideal for a wide range of applications, from consumer electronics to industrial devices. Elevate your projects with proven quality and enjoy the benefits of scalability and durability—experience the STMicroelectronics difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material enhances the reliability and protection of the flash memory, making it suitable for various environments.

Surface Mount: YES

Surface mount technology allows for higher density packaging, making it easier to incorporate this memory into compact and modern electronic designs.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space usage on PCBs, contributing to more efficient layouts and component integration.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates, improving overall system performance, especially in high-speed applications.

Nominal Supply Voltage / Vsup: 3.3 V

Operating at a nominal supply voltage of 3.3 V ensures compatibility with a wide range of electronic systems and reduces power consumption.

No. of Terminals: 32

Having 32 terminals provides ample connectivity options, supporting complex routing and integrations in various configurations.

Package Style (Meter): CHIP CARRIER

The chip carrier style facilitates easy handling during assembly and allows for automated manufacturing processes.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures the chip can perform reliably in moderate to high-temperature environments, making it versatile for various applications.

Organization: 256KX8

With an organization of 256Kx8, it strikes a balance between capacity and access speed, suitable for storage in many consumer applications.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0 °C allows for functionality in a wider range of environments, from standard room temperatures to colder conditions.

Terminal Position: QUAD

Quad terminal position improves signal integrity and minimizes crosstalk, particularly beneficial for high-speed data applications.

Maximum Seated Height: 3.56 mm

A low profile with a maximum seated height of 3.56 mm enables sleek designs and better thermal management in compact devices.

Width: 11.455 mm

With a width of 11.455 mm, it fits comfortably within standard PCB layouts, allowing for greater design flexibility.

Minimum Supply Voltage (Vsup): 3 V

A minimum supply voltage of 3 V means this flash memory can operate at lower power levels, increasing efficiency and extending battery life in portable devices.

Type: NOR TYPE

NOR flash type allows for reliable random access, which is advantageous for code execution and embedded system applications.

Length: 13.995 mm

The compact length of 13.995 mm ensures that this memory can fit in small electronic devices without compromising other components.

Programming Voltage (V): 3

Maintaining a programming voltage of 3 V is beneficial for ensuring compatibility with low-voltage systems and minimizing energy consumption.

Temperature Grade: COMMERCIAL

Rated for commercial temperature grades, this memory is suitable for general consumer electronics, ensuring dependability and performance.

Technology: CMOS

Utilizing CMOS technology enables lower power consumption and higher density, making it an excellent choice for modern applications.

Parallel or Serial: PARALLEL

Parallel interface improves data throughput, ensuring faster read and write cycles, which is essential for high-performance systems.

Terminal Form: J BEND

J BEND terminal form facilitates easier soldering and attachment to PCBs, benefiting assembly processes and reducing potential connection issues.

No. of Words: 262144 words

Offering 262144 words provides flexible storage capacity, sufficient for a wide variety of applications ranging from small embedded systems to larger devices.

Memory Width: 8

With a memory width of 8 bits, it matches well with standard 8-bit data buses, improving integration with existing systems.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm provides well-balanced spacing for reliable connections and easier handling during assembly.

No. of Words Code: 256K

A capacity coding of 256K words effectively meets the needs of applications requiring moderate storage without excess overhead.

Maximum Supply Voltage (Vsup): 3.6 V

Supporting a maximum supply voltage of 3.6 V ensures compatibility with diverse electronic designs and can accommodate slight voltage fluctuations.

Memory Density: 2097152 bit

A memory density of 2097152 bits allows for substantial data storage, catering to numerous electronic applications that require reliable memory solutions.

Memory IC Type: FLASH

As a flash memory IC type, it provides non-volatile storage, retaining data without power, ideal for a variety of consumer electronics.

Maximum Access Time: 11 ns

A maximum access time of 11 ns supports high-speed operations, ensuring efficient data retrieval essential for real-time applications.

Technical Specifications

Flash Memory M50LPW020K1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

JESD-30 Code:

R-PQCC-J32

Length:

13.995 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Type:

NOR TYPE

Width:

11.455 mm

Trade Compliance

M50LPW020K1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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