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M50LPW012K1

STMicroelectronics

M50LPW012K1 by STMicroelectronics

M50LPW012K1 from STMicroelectronics is a 256Kx8 NOR Flash memory with a 3.3V supply, featuring a max access time of 11 ns and operating temp range of 0 °C to 70°C. Ideal for synchronous applications, it supports parallel interface and comes in a compact chip carrier package. Its low power consumption makes it suitable for various embedded systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,225 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,225

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Vyrian

USA . 2,543 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,543

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Anansix

USA . 2,018 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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2,018

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,082 parts In-Stock

1+ parts

$3.658

100+ parts

-

1k+ parts

$3.292

10k+ parts

-

1,082

$3.658

-

$3.292

-

MKK Technologies

India . 1,489 parts In-Stock

1+ parts

$6.878

100+ parts

-

1k+ parts

-

10k+ parts

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1,489

$6.878

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DigiPath Technology Company

USA . 1,489 parts In-Stock

1+ parts

$6.878

100+ parts

-

1k+ parts

-

10k+ parts

-

1,489

$6.878

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-

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Corphita

USA . 2,884 parts In-Stock

1+ parts

-

100+ parts

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2,884

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Parana Technologies

USA . 358 parts In-Stock

1+ parts

-

100+ parts

$4.374

1k+ parts

-

10k+ parts

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358

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$4.374

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Overview

Unlock unparalleled performance with the M50LPW012K1 flash memory from STMicroelectronics, a leader in innovative semiconductor solutions. This compact and reliable device excels in various applications, ensuring fast data access and robust storage capabilities. With its advanced synchronous operation and exceptional temperature resilience, you’ll experience unmatched efficiency and durability. Elevate your projects with this cutting-edge memory solution that adds value by enhancing system performance and reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against various environmental factors.

Surface Mount: YES

Surface mount technology allows for compact designs and easier integration into modern electronics.

Package Shape: RECTANGULAR

The rectangular shape optimizes layout efficiency on PCBs, allowing for more flexible design options.

Operating Mode: SYNCHRONOUS

Synchronous operation provides faster performance and improved system response times.

Nominal Supply Voltage / Vsup: 3.3 V

A nominal supply voltage of 3.3 V is standard for low-power devices, making it suitable for a range of applications.

Power Supplies: 3.3 V

Operating at 3.3 V supports compatibility with many modern ICs and systems.

No. of Terminals: 32

A higher number of terminals allows for various connections and better signal integrity.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging enhances thermal management and allows for easy handling in manufacturing.

Maximum Operating Temperature: 70 °C

With a max operating temperature of 70 °C, this product can function effectively in a range of environments.

Organization: 256KX8

This organization offers a good balance between density and data accessibility, making it versatile for various applications.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C enables the product to be used in diverse climates and conditions.

No. of Sectors/Size: 1,2,1,3

Flexible sector sizes improve data management and enhance performance for varying use cases.

Terminal Finish: TIN LEAD

The tin-lead finish improves solderability and reliability in assembly processes.

Terminal Position: QUAD

Quad terminal positioning facilitates easier PCB layout and helps in better pin access.

Maximum Seated Height: 3.56 mm

A low maximum height allows for compact designs, ideal for space-constrained applications.

Width: 11.43 mm

The width fits well in standard board sizes, providing flexibility in design.

Minimum Supply Voltage (Vsup): 3 V

Operating at a minimum of 3 V is beneficial for energy-efficient designs.

Type: NOR TYPE

NOR type architecture provides faster read speeds and is well-suited for executing code directly from flash.

Length: 13.97 mm

The length supports integration into a range of device sizes, enhancing its application versatility.

Programming Voltage (V): 3 V

A programming voltage of 3 V simplifies design requirements and integration with other components.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures suitability for various consumer electronics applications.

Technology: CMOS

CMOS technology provides lower power consumption and higher noise immunity, enhancing reliability.

Parallel or Serial: PARALLEL

Parallel communication allows for higher data transfer rates, improving overall system performance.

Terminal Form: J BEND

J bend terminals facilitate easier handling and assembly in manufacturing processes.

Sector Size (Words): 16K, 8K, 32K, 64K

Flexible sector sizes allow for efficient data management and can cater to varying application requirements.

Maximum Supply Current: 60 mA

A maximum supply current of 60 mA assures sufficient performance while maintaining power efficiency.

No. of Words: 262144 words

An ample word count provides substantial storage capacity for diverse applications.

Memory Width: 8

An 8-bit memory width facilitates compatibility with standard data buses, making it easier to integrate.

Terminal Pitch: 1.27 mm

1.27 mm terminal pitch allows for standard PCB layouts and simplifies assembly.

No. of Words Code: 256K

A code density of 256K offers robust storage for software applications and firmware.

Command User Interface: YES

A command user interface simplifies the interaction with the memory, enabling ease of use in development.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6 V ensures compatibility with a variety of electronic systems.

Boot Block: BOTTOM/TOP

A bottom/top boot block configuration is beneficial for firmware storage and quick system recovery.

Memory Density: 2097152 bit

High memory density supports complex applications that require significant storage capabilities.

Memory IC Type: FLASH

As a flash memory IC, it provides non-volatile storage, retaining data even when powered off.

Maximum Standby Current: 0.0001 Amp

Low standby current enhances energy efficiency, making it ideal for battery-operated devices.

Maximum Access Time: 11 ns

Fast maximum access time of 11 ns ensures quick data retrieval, improving overall system responsiveness.

Technical Specifications

Flash Memory M50LPW012K1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.97 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50LPW012K1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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