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M50LPW040N1T

STMicroelectronics

M50LPW040N1T by STMicroelectronics

M50LPW040N1T from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and 512Kx8 organization. Its compact SOIC package (10mm x 18.4mm) makes it ideal for space-constrained applications. Operating b/w 0 °C to 70 °C, it's perfect for commercial use in embedded systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,692 parts In-Stock

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4,692

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Vyrian

USA . 2,620 parts In-Stock

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2,620

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Anansix

USA . 885 parts In-Stock

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885

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 443 parts In-Stock

1+ parts

$5.375

100+ parts

-

1k+ parts

$4.837

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443

$5.375

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$4.837

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MKK Technologies

India . 39 parts In-Stock

1+ parts

$10.107

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39

$10.107

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DigiPath Technology Company

USA . 39 parts In-Stock

1+ parts

$10.107

100+ parts

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39

$10.107

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Corphita

USA . 3,105 parts In-Stock

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3,105

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Parana Technologies

USA . 1,649 parts In-Stock

1+ parts

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$6.426

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1,649

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$6.426

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Overview

Unlock seamless performance with the M50LPW040N1T from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality flash memory delivers exceptional speed and reliability, making it ideal for diverse applications such as automotive, IoT devices, and consumer electronics. With its compact design and low power consumption, this memory solution ensures efficiency without compromising on quality, empowering your projects to thrive in a competitive landscape. Experience the advantages of STMicroelectronics and elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and an effective barrier against environmental factors, contributing to the longevity of the device.

Surface Mount: YES

Being a surface mount device allows for higher density packaging, making it ideal for modern designs with limited space.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB and allows for compact layouts, enhancing overall design efficiency.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer speeds and enhances overall performance in high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a standard voltage of 3.3V makes this product compatible with a wide range of digital circuits and systems.

Power Supplies (V): 3.3

The requirement for a 3.3V power supply simplifies integration into modern electronics, reducing design complexity.

No. of Terminals: 40

The 40-terminal configuration provides ample I/O options for diverse connectivity needs in applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile make it suitable for space-constrained applications, ensuring efficient use of board real estate.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this device is suitable for commercial applications without overheating concerns.

Organization: 512KX8

The organization of 512KX8 offers sufficient storage for medium-sized applications, balancing capacity and performance.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C ensures reliability in a variety of environments, making it versatile for different applications.

No. of Sectors/Size: 8

Having 8 sectors allows for organized data storage and quick access, enhancing performance in systems requiring rapid data retrieval.

Terminal Finish: TIN LEAD

The tin-lead finish provides excellent solderability and durability, ensuring strong connections on the PCB.

Terminal Position: DUAL

Dual terminal positioning facilitates easier routing and enhances integration into multi-layer boards.

Maximum Seated Height: 1.2 mm

A maximum seated height of just 1.2 mm helps maintain a low-profile design, ideal for compact systems.

Width: 10 mm

The 10 mm width contributes to a compact design footprint, allowing for efficient use of space in electronic applications.

Minimum Supply Voltage (Vsup): 3 V

A minimum supply voltage of 3V provides flexibility in power supply options, accommodating various circuit needs.

Type: NOR TYPE

NOR-type flash memory is known for its fast random access times, making it suitable for applications requiring quick read operations.

Length: 18.4 mm

At 18.4 mm in length, this device's dimensions support efficient layout design for electronic assemblies.

Programming Voltage (V): 3

Operating at a programming voltage of 3V adds flexibility in digital circuit designs, simplifying integration.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliable performance in everyday applications without the need for stringent environmental controls.

Technology: CMOS

CMOS technology provides low power consumption and high-speed performance, making this product efficient for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data transfer rates, catering to high-performance applications where speed is crucial.

Terminal Form: GULL WING

Gull-wing terminal form enhances solder connection reliability, making assembly easier and more robust.

Sector Size (Words): 64K

A sector size of 64K supports efficient memory management, enabling better performance in applications that require frequent write operations.

Maximum Supply Current: 60 mA

A maximum supply current of 60 mA ensures that the device can operate effectively under load without exceeding power supply limitations.

No. of Words: 524288 words

The capacity of 524288 words offers substantial storage for applications, making it a versatile choice for varied uses.

Memory Width: 8

A memory width of 8 bits provides optimal data throughput for standard data bus systems.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch maximizes pin density without compromising solderability, allowing for more compact designs.

No. of Words Code: 512K

The 512K words code designates a decent memory capacity suitable for applications ranging from small devices to moderately sized digital systems.

Command User Interface: YES

A user-friendly command interface facilitates easier integration and control over the memory operations, reducing the learning curve for developers.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V provides user flexibility to adapt to different voltage environments when integrating into diverse systems.

Memory Density: 4194304 bit

A memory density of 4194304 bits ensures ample storage capability for a wide range of applications, from consumer gadgets to industrial equipment.

Memory IC Type: FLASH

As a FLASH memory IC, it provides non-volatile storage, making it perfect for applications where data retention is critical even when power is lost.

Maximum Standby Current: 0.0001 Amp

The minimal standby current of 0.0001 Amp signifies low power consumption during inactive states, making it energy-efficient for battery-operated devices.

Maximum Access Time: 11 ns

With a maximum access time of 11 ns, this memory provides swift data retrieval, ensuring fast performance in high-speed applications.

Technical Specifications

Flash Memory M50LPW040N1T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G40

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

40

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M50LPW040N1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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