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NAND512W3A2SN6E

Micron Technology

NAND512W3A2SN6E by Micron Technology

Micron's NAND512W3A2SN6E is a 64MX8 SLC NAND flash memory with 536870912-bit density. Operating at 3V, it has a temp range of -40 to 85°C and uses parallel interface with 0.5mm pitch. Ideal for industrial applications, this compact chip measures 18.4mm x 12mm x 1.2mm and features Ni/Pd/Au finish on dual terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Vyrian

USA . 8,904 parts In-Stock

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Digiode

USA . 1,860 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Bristol Electronics

USA . 92 parts In-Stock

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Atlantic Semiconductor

USA . 92 parts In-Stock

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Cyclops Electronics Ltd

UK . 32 parts In-Stock

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Prism Electronics

USA . 2 parts In-Stock

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LWI Electronics Inc

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Aztec Data Supply Inc.

USA . 347 parts In-Stock

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$2.840

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347

$2.840

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Corohmni

South Africa . 224 parts In-Stock

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$5.078

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AZTECH Wire

Italy . 256 parts In-Stock

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$6.582

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Semicontronic

India . 1,197 parts In-Stock

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$17.000

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$16.575

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$16.490

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Ampacity Inc.

Singapore . 422 parts In-Stock

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$22.000

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S.R.D Solutions

India . 30,000 parts In-Stock

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Perfect Parts

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A-Z Elektronik GmbH

Germany . 7,001 parts In-Stock

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Kepictronics

USA . 5,722 parts In-Stock

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Continental Prestige Electronics

USA . 3,759 parts In-Stock

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Argo Parts USA

USA . 3,036 parts In-Stock

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RC Electronics

USA . 1,280 parts In-Stock

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Futuretech Components

Singapore . 1,152 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Corphita

USA . 302 parts In-Stock

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Microchip USA

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iodParts Technologies Inc.

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Advanced Electronics

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Bastille Electronics

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Overview

Unleash the power of cutting-edge technology with the NAND512W3A2SN6E by Micron Technology, a top-tier manufacturer known for its superior quality and innovation. This flash memory device offers unparalleled performance and reliability, making it the perfect choice for a wide range of applications. From industrial to consumer electronics, this product delivers exceptional value by providing fast data storage and retrieval capabilities, all while maintaining a compact and durable design. Upgrade your devices with the NAND512W3A2SN6E and experience the difference Micron Technology brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the flash memory chip, ensuring long-lasting performance.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for efficient data transfer and processing, enhancing the overall performance of the flash memory product.

Nominal Supply Voltage (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of devices, making this flash memory chip versatile and easy to integrate.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory chip can withstand high temperatures, making it suitable for industrial applications.

Memory Density: 536870912 bit

High memory density allows for storing a large amount of data in a compact form factor, making this flash memory chip ideal for devices with limited space.

Technical Specifications

Flash Memory NAND512W3A2SN6E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e4

Length:

18.4 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

NAND512W3A2SN6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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