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M50LPW040K1

STMicroelectronics

M50LPW040K1 by STMicroelectronics

M50LPW040K1 from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11ns, operates in temperatures from 0 °C to 70 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,452 parts In-Stock

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2,452

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Digiode

USA . 1,201 parts In-Stock

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1,201

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Vyrian

USA . 409 parts In-Stock

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409

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 703 parts In-Stock

1+ parts

$5.248

100+ parts

-

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$4.723

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703

$5.248

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$4.723

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MKK Technologies

India . 2,073 parts In-Stock

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$9.868

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2,073

$9.868

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DigiPath Technology Company

USA . 2,073 parts In-Stock

1+ parts

$9.868

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2,073

$9.868

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A-Z Elektronik GmbH

Germany . 6,065 parts In-Stock

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6,065

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Alle Elektronik GmbH

Germany . 4,043 parts In-Stock

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4,043

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Parana Technologies

USA . 1,823 parts In-Stock

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$6.274

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1,823

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$6.274

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Corphita

USA . 118 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the M50LPW040K1 from STMicroelectronics. Renowned for quality, STMicroelectronics delivers flash memory that excels in diverse applications—from automotive to consumer electronics. Enjoy faster data access and efficient power usage, ensuring your devices run seamlessly. With its compact design and robust temperature range, this memory solution enhances your projects, providing lasting value and peace of mind. Choose innovation; choose STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy helps protect the memory device from environmental factors, enhancing its reliability.

Surface Mount: YES

Surface mount technology allows for easier assembly, shorter lead times, and reduced manufacturing costs.

Package Shape: RECTANGULAR

The rectangular shape optimizes space usage on printed circuit boards, making it a great choice for compact designs.

Operating Mode: SYNCHRONOUS

Synchronous operation enables faster data transfers, improving overall performance in applications requiring high speed.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3 V ensures compatibility with a wide range of devices and systems.

Power Supplies (V): 3.3

Supports efficient energy consumption, making it suitable for battery-powered applications.

No. of Terminals: 32

The 32 terminals provide ample connectivity for various data and control signals, enhancing device functionality.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging allows for efficient mounting and heat dissipation, ensuring stable operation.

Maximum Operating Temperature: 70 °C

The ability to operate at temperatures up to 70 °C ensures reliability in a variety of environmental conditions.

Organization: 512KX8

The memory organization supports efficient data handling, making it a great fit for various applications.

Minimum Operating Temperature: 0 °C

Starting operation from 0 °C provides flexibility for use in a wide range of climates.

No. of Sectors/Size: 8

Having multiple sectors enables efficient data management and retrieval, improving application performance.

Terminal Finish: Matte Tin (Sn)

Matte tin finish improves solderability and corrosion resistance, contributing to long-term reliability.

Terminal Position: QUAD

Quad terminal positioning allows for improved signal integrity and reduces noise in high-speed applications.

Maximum Seated Height: 3.56 mm

A low seated height facilitates the design of slim electronic devices without compromising performance.

Width: 11.43 mm

The compact width allows for high-density layout on circuit boards, making it ideal for space-constrained designs.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage of 3 V supports a wide range of applications, enhancing versatility.

Type: NOR TYPE

NOR type memory provides fast read access speeds, making it ideal for applications requiring quick data retrieval.

Length: 13.97 mm

A short length aids in the overall compactness of electronic assemblies.

Programming Voltage (V): 3

Operating at a programming voltage of 3 V ensures compatibility with many standard logic families.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliable operation in standard operating environments.

Technology: CMOS

CMOS technology offers low power consumption and high integration capabilities.

Parallel or Serial: PARALLEL

Parallel data transfer enables faster communication speeds, enhancing performance in high-speed applications.

Terminal Form: J BEND

J bend terminals facilitate secure mounting and enhance solder joint reliability.

Sector Size (Words): 64K

A sector size of 64K words supports efficient memory organization for various applications.

Maximum Supply Current: 60 mA

A maximum supply current of 60 mA indicates moderate power requirements, suitable for many applications.

No. of Words: 524288 words

Offering 524288 words provides substantial storage capacity for diverse data requirements.

Memory Width: 8

An 8-bit memory width strikes a balance between performance and complexity in data handling.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch supports standard PCB layouts, making integration straightforward.

No. of Words Code: 512K

With 512K words of storage, this device can accommodate a range of applications, from simple to complex.

Command User Interface: YES

A user-friendly command interface simplifies integration into existing systems.

Maximum Supply Voltage (Vsup): 3.6 V

Operating at a maximum supply voltage of 3.6 V ensures compatibility with a variety of power sources.

Memory Density: 4194304 bit

This high memory density allows for increased data storage in a compact form factor.

Memory IC Type: FLASH

As a FLASH memory IC, it provides fast access times and re-programmability, making it a versatile choice.

Maximum Standby Current: 0.0001 Amp

A very low standby current enhances energy efficiency, crucial for battery-powered applications.

Maximum Access Time: 11 ns

A maximum access time of 11 ns indicates fast performance, essential for high-speed applications.

Technical Specifications

Flash Memory M50LPW040K1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50LPW040K1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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