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M50LPW002K1

STMicroelectronics

M50LPW002K1 by STMicroelectronics

M50LPW002K1 from STMicroelectronics is a 256Kx8 NOR Flash memory with a 3.3V supply, ideal for embedded applications. It features a max access time of 11 ns and operates in synchronous mode. With a compact chip carrier design, it ensures efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,623 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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2,623

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Vyrian

USA . 1,909 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,909

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Anansix

USA . 841 parts In-Stock

1+ parts

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841

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 750 parts In-Stock

1+ parts

$3.158

100+ parts

-

1k+ parts

$2.843

10k+ parts

-

750

$3.158

-

$2.843

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MKK Technologies

India . 792 parts In-Stock

1+ parts

$5.939

100+ parts

-

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-

10k+ parts

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792

$5.939

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DigiPath Technology Company

USA . 792 parts In-Stock

1+ parts

$5.939

100+ parts

-

1k+ parts

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10k+ parts

-

792

$5.939

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Corphita

USA . 3,469 parts In-Stock

1+ parts

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3,469

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Parana Technologies

USA . 918 parts In-Stock

1+ parts

-

100+ parts

$3.776

1k+ parts

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10k+ parts

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918

-

$3.776

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Overview

Unlock the potential of your next project with the M50LPW002K1 flash memory from STMicroelectronics! Renowned for their commitment to quality and innovation, STMicroelectronics delivers exceptional performance in a compact design, perfect for diverse applications—from automotive to consumer electronics. This robust memory solution ensures fast access speeds and reliable data integrity, empowering you to build cutting-edge products that stand out in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy materials provide durability and protection against environmental factors, making the flash memory reliable for long-term use.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB designs, making integration into various applications easier.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB, allowing for better layout and potential cost savings in manufacturing.

Operating Mode: SYNCHRONOUS

Synchronous operation improves speed and efficiency, leading to faster data access and reduced latency.

Nominal Supply Voltage / Vsup: 3.3 V

Operating at 3.3 V is compatible with many modern processors and systems, ensuring widespread applicability.

Power Supplies: 3.3 V

Standard power supply requirement makes it easy to power the device in various electronic systems without additional components.

No. of Terminals: 32

The 32 terminals allow for versatile connections and ensure robust performance in applications requiring multiple signals.

Package Style (Meter): CHIP CARRIER

Chip carrier style provides a stable and secure platform for the memory IC, contributing to reliability in performance.

Maximum Operating Temperature: 70 °C

The ability to operate at temperatures up to 70 °C allows for use in a broad range of environments, including industrial applications.

Organization: 256KX8

This organization supports efficient data handling and retrieval, which is crucial for high-performance applications.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C ensures functionality in standard indoor environments without risk of failure.

No. of Sectors/Size: 1,2,1,3

Having multiple sectors enhances data management capabilities and allows for flexible memory allocation in different applications.

Terminal Finish: TIN LEAD

The tin-lead finish ensures good solderability, improving the reliability of connections on the PCB.

Terminal Position: QUAD

Quad terminal positioning allows for better electrical performance and easier routing on densely populated PCBs.

Maximum Seated Height: 3.56 mm

A compact size with a maximum seated height of 3.56 mm promotes space-saving designs without sacrificing performance.

Width: 11.455 mm

The moderate width is suitable for most applications, helping to ensure the component fits into a variety of designs.

Minimum Supply Voltage (Vsup): 3 V

A minimum supply voltage of 3 V provides flexibility in design and compatibility with a range of power supplies.

Type: NOR TYPE

NOR type memory is suitable for fast read operations, making it optimal for applications requiring quick data access.

Length: 13.995 mm

The length is appropriate for compact designs, allowing integration into space-constrained environments.

Programming Voltage (V): 3

A programming voltage of 3 V aligns with modern standards, simplifying interfacing with current technology.

Temperature Grade: COMMERCIAL

Commercial grade temperature tolerance ensures the memory can be used in a variety of everyday applications.

Technology: CMOS

CMOS technology provides low power consumption, making the memory suitable for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel operation enables faster data transfer rates compared to serial, enhancing overall performance in data-intensive applications.

Terminal Form: J BEND

J bend terminals provide reliable mounting and connection to the PCB, contributing to the integrity of the device's operation.

Sector Size (Words): 16K, 8K, 32K, 64K

Variable sector sizes accommodate different storage needs, offering flexibility for a wide range of applications.

Maximum Supply Current: 60 mA

A maximum supply current of 60 mA indicates efficient power consumption, beneficial for thermal management and battery life.

No. of Words: 262144 words

With 262144 words, this product provides ample storage for various applications, from simple data logging to complex firmware storage.

Memory Width: 8

An 8-bit memory width aligns with common data formats, enabling ease of integration with most systems.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm facilitates soldering and connection to PCB traces, making the assembly process easier.

No. of Words Code: 256K

The 256K word code offers a substantial amount of memory for various applications, facilitating efficient data storage and retrieval.

Command User Interface: YES

The presence of a user interface for commands simplifies control and usage, making it accessible for developers.

Ready or Busy: YES

The ready/busy indication allows developers to easily integrate the memory into systems by monitoring its status during operations.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6 V provides the range necessary for stable operation in power supplies and battery applications.

Boot Block: TOP

Top boot block configuration enhances booting speed for applications requiring quick startup times.

Memory Density: 2097152 bit

With a memory density of 2097152 bits, this flash memory offers significant storage capabilities for advanced applications.

Memory IC Type: FLASH

Flash memory technology allows for non-volatile data storage, retaining information even when power is turned off.

Maximum Standby Current: 0.0001 Amp

Very low standby current of 0.0001 Amp minimizes power usage, ideal for energy-efficient applications.

Maximum Access Time: 11 ns

An access time of 11 ns supports high-speed performance, making this memory suitable for applications demanding quick data retrieval.

Technical Specifications

Flash Memory M50LPW002K1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Additional Features:

TOP BOOT BLOCK

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.995 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

3.56 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.455 mm

Trade Compliance

M50LPW002K1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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