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M50LPW040N5

STMicroelectronics

M50LPW040N5 by STMicroelectronics

M50LPW040N5 from STMicroelectronics is a 4Mbit NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and a thin profile package. Ideal for embedded applications, it operates in synchronous mode with 512Kx8 organization. Its robust design supports temperatures from -20 °C to 85 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,544 parts In-Stock

1+ parts

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4,544

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Digiode

USA . 3,579 parts In-Stock

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100+ parts

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3,579

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Anansix

USA . 2,733 parts In-Stock

1+ parts

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2,733

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,027 parts In-Stock

1+ parts

$3.888

100+ parts

-

1k+ parts

$3.499

10k+ parts

-

1,027

$3.888

-

$3.499

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MKK Technologies

India . 906 parts In-Stock

1+ parts

$7.311

100+ parts

-

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906

$7.311

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DigiPath Technology Company

USA . 906 parts In-Stock

1+ parts

$7.311

100+ parts

-

1k+ parts

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10k+ parts

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906

$7.311

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Corphita

USA . 1,783 parts In-Stock

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1,783

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Parana Technologies

USA . 1,169 parts In-Stock

1+ parts

-

100+ parts

$4.649

1k+ parts

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1,169

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$4.649

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Overview

Unlock unparalleled performance with the M50LPW040N5 Flash Memory from STMicroelectronics, a trusted leader in semiconductor innovation. Crafted for reliability and efficiency, this compact memory solution excels in diverse applications, ensuring rapid data access and seamless integration. With its robust design and energy-efficient operation, it empowers your devices to perform at their best while enhancing longevity. Experience the perfect blend of quality and value that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is lightweight and provides excellent protection against environmental factors, making the product durable.

Surface Mount: YES

Surface mount technology allows for efficient use of board space and facilitates automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB and contributes to a compact design.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer rates and overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a low voltage of 3.3V ensures compatibility with various modern electronic systems while minimizing power consumption.

Power Supplies (V): 3.3

The requirement for only a 3.3V supply makes integration easy with many microcontrollers and processors.

No. of Terminals: 40

With 40 terminals, this product offers ample connections for various interfaces, ensuring versatile integration capabilities.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile design allows for high-density mounting, making it suitable for space-constrained applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product is suitable for most industrial and consumer applications.

Organization: 512KX8

This memory organization provides efficient data handling for various applications, making it versatile for storage tasks.

Minimum Operating Temperature: -20 °C

The broad temperature range ensures reliability in diverse environments, including harsh conditions.

No. of Sectors/Size: 8

Eight sectors allow for effective data management and organization, facilitating easier data handling.

Terminal Finish: TIN LEAD

The tin lead finish ensures good solderability, promoting strong and reliable connections during assembly.

Terminal Position: DUAL

Dual terminal positioning enhances signal integrity and reduces potential interference.

Maximum Seated Height: 1.2 mm

A low seated height enables closer placement on the PCB and contributes to a more compact overall design.

Width: 10 mm

The narrow width aids in fitting into smaller designs, enhancing the product's versatility across multiple applications.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage of 3V allows flexibility in power supply options, accommodating various designs.

Type: NOR TYPE

NOR flash memory offers fast read speeds and allows for byte-level access, which is beneficial for many applications.

Length: 18.4 mm

The compact length contributes to minimizing PCB footprint, essential for modern electronic devices.

Programming Voltage (V): 3

The programming voltage of 3V aids in reducing power requirements during programming, improving overall efficiency.

Technology: CMOS

CMOS technology contributes to low power consumption and high density, making it ideal for memory applications.

Parallel or Serial: PARALLEL

Parallel data access allows for faster data transfer rates, enhancing performance in high-speed applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and efficient heat dissipation during assembly.

Sector Size (Words): 64K

A sector size of 64K provides a good balance between performance and flexibility for storing data.

Maximum Supply Current: 60 mA

With a maximum supply current of 60 mA, the device ensures efficient power usage under typical operating conditions.

No. of Words: 524288 words

Offering 524,288 words of storage provides ample capacity for diverse applications, from simple data logging to complex system operations.

Memory Width: 8

An 8-bit memory width aligns well with standard data formats, promoting compatibility with common data systems.

Terminal Pitch: 0.5 mm

The 0.5 mm terminal pitch allows for a densely packed PCB layout, crucial for high-performance electronics.

No. of Words Code: 512K

512K words provide significant storage solutions for numerous applications needing reliable data retention.

Command User Interface: YES

The inclusion of a user interface for command operations simplifies integration and control in system designs.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V offers flexibility for higher performance applications without risking damage.

Memory Density: 4194304 bit

With a high density of 4,194,304 bits, this product supports extensive data storage needs, ideal for modern applications.

Memory IC Type: FLASH

Flash memory technology provides non-volatile storage solutions, ensuring data retention even when power is lost.

Maximum Standby Current: 0.0001 Amp

Minimal standby current enhances energy efficiency, making it a great choice for battery-powered applications.

Maximum Access Time: 11 ns

Fast access time of 11 ns ensures quick data retrieval, significantly improving system responsiveness.

Technical Specifications

Flash Memory M50LPW040N5 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G40

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

40

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M50LPW040N5 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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