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M50LPW040K5T

STMicroelectronics

M50LPW040K5T by STMicroelectronics

M50LPW040K5T from STMicroelectronics is a 4Mbit NOR Flash memory with a synchronous operating mode and a supply voltage range of 3-3.6V. It features an access time of 11ns, operates in temperatures from -20 °C to 85 °C, and is ideal for embedded applications. Its compact chip carrier design ensures efficient surface mounting in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,573 parts In-Stock

1+ parts

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3,573

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Anansix

USA . 1,625 parts In-Stock

1+ parts

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1k+ parts

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1,625

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Vyrian

USA . 671 parts In-Stock

1+ parts

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671

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 192 parts In-Stock

1+ parts

$3.301

100+ parts

-

1k+ parts

$2.971

10k+ parts

-

192

$3.301

-

$2.971

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MKK Technologies

India . 2,353 parts In-Stock

1+ parts

$6.207

100+ parts

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10k+ parts

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2,353

$6.207

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DigiPath Technology Company

USA . 2,353 parts In-Stock

1+ parts

$6.207

100+ parts

-

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10k+ parts

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2,353

$6.207

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Corphita

USA . 4,802 parts In-Stock

1+ parts

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4,802

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Parana Technologies

USA . 1,951 parts In-Stock

1+ parts

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100+ parts

$3.947

1k+ parts

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1,951

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$3.947

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Overview

Elevate your projects with the M50LPW040K5T Flash Memory from STMicroelectronics, renowned for its commitment to quality and innovation. This high-performance NOR flash memory offers unparalleled reliability, perfect for applications in consumer electronics, automotive systems, and industrial devices. Benefit from its efficient power consumption and rapid access times, ensuring that your designs run smoothly and efficiently, empowering you to stay ahead in a competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of a durable plastic/epoxy material helps protect the IC from environmental damage, enhancing reliability in various applications.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB designs, making this product suitable for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient packing and fitting on circuit boards, making it versatile for various designs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data access and increased overall system performance, making it ideal for high-speed applications.

Nominal Supply Voltage / Vsup: 3.3 V

Operating at 3.3 V is standard for many systems, ensuring compatibility and ease of integration into existing designs.

Power Supplies (V): 3.3 V

Operating on a standard power supply voltage simplifies design requirements and reduces the need for additional voltage regulators.

No. of Terminals: 32

A higher number of terminals allows for more connections, facilitating better functionality and integration options on circuit boards.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging supports robust performance and easy handling during manufacturing, which improves production efficiency.

Maximum Operating Temperature: 85 °C

The ability to operate at higher temperatures enhances reliability in demanding applications like automotive and industrial equipment.

Organization: 512KX8

This memory organization allows efficient data handling and storage, making it suitable for various memory-intensive applications.

Minimum Operating Temperature: -20 °C

Operational range down to -20 °C ensures reliable performance in cold environments, widening the range of applications.

No. of Sectors/Size: 8

Multiple sectors enhance data management capabilities, allowing for efficient storage and retrieval operations.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides excellent solderability, improving manufacturing efficiency and ensuring reliable electrical connections.

Terminal Position: QUAD

Quad terminal positioning helps in reducing trace length and improving signal integrity, which is essential for high-speed applications.

Maximum Seated Height: 3.56 mm

Compact height allows for better layering in multi-component designs, maximizing space utilization on circuit boards.

Width: 11.43 mm

This width strikes a balance between performance and space efficiency, fitting well in a variety of electronic designs.

Minimum Supply Voltage (Vsup): 3 V

The capability to operate at a minimum voltage of 3 V allows for lower power consumption, crucial for battery-powered devices.

Type: NOR TYPE

NOR type flash memory allows for faster read speeds, making it suitable for code storage and execution.

Length: 13.97 mm

The length of this component is well-suited for various PCB layouts, providing flexibility in design.

Programming Voltage (V): 3 V

Operating at a lower programming voltage minimizes power consumption during programming processes, which is advantageous for energy efficiency.

Technology: CMOS

CMOS technology ensures low power consumption and high speed, making it a suitable choice for modern electronic applications.

Parallel or Serial: PARALLEL

Parallel data access increases throughput, facilitating faster read/write operations critical for performance-intensive applications.

Terminal Form: J BEND

J bend terminals ensure secure and reliable connections during assembly, which improves overall product durability.

Sector Size (Words): 64K

Large sector sizes improve the efficiency of data write operations, making it suitable for applications with substantial data storage requirements.

Maximum Supply Current: 60 mA

The moderate supply current keeps power demands manageable, thereby improving the overall efficiency of the device.

No. of Words: 524288 words

The substantial memory capacity ensures ample storage for applications requiring significant data retention.

Memory Width: 8

An 8-bit memory width provides a good balance between performance and integration, making it versatile for various applications.

Terminal Pitch: 1.27 mm

Standard terminal pitch allows for compatibility with existing PCB designs, simplifying the integration process.

No. of Words Code: 512K

High word count capacity provides flexibility in application development, supporting a wide range of use cases from small to larger applications.

Command User Interface: YES

A command user interface simplifies user interaction with the memory, improving usability and control for developers.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6 V ensures compatibility with many systems while providing a safety margin for voltage fluctuations.

Memory Density: 4194304 bit

High memory density indicates significant storage capabilities, making this product ideal for high-performance and data-intensive applications.

Memory IC Type: FLASH

As a flash memory IC, it provides non-volatile storage, ensuring data retention even when the power is off.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current minimizes power consumption in idle states, essential for battery-operated devices.

Maximum Access Time: 11 ns

A fast access time of 11 ns supports high-speed applications, improving system responsiveness and overall performance.

Technical Specifications

Flash Memory M50LPW040K5T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50LPW040K5T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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