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M50LPW041K1T

STMicroelectronics

M50LPW041K1T by STMicroelectronics

M50LPW041K1T from STMicroelectronics is a 4Mbit NOR Flash memory with a synchronous operating mode and 32 terminals. It operates at 3.3V, features an access time of 11ns, and is ideal for embedded applications requiring reliable data storage. Its compact chip carrier design ensures efficient integration in various devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,591 parts In-Stock

1+ parts

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100+ parts

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4,591

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Vyrian

USA . 3,116 parts In-Stock

1+ parts

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1k+ parts

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3,116

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Anansix

USA . 1,174 parts In-Stock

1+ parts

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1,174

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 691 parts In-Stock

1+ parts

$4.033

100+ parts

-

1k+ parts

$3.630

10k+ parts

-

691

$4.033

-

$3.630

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MKK Technologies

India . 1,624 parts In-Stock

1+ parts

$7.584

100+ parts

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10k+ parts

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1,624

$7.584

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DigiPath Technology Company

USA . 1,624 parts In-Stock

1+ parts

$7.584

100+ parts

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1k+ parts

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10k+ parts

-

1,624

$7.584

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Corphita

USA . 1,553 parts In-Stock

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1,553

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Parana Technologies

USA . 21 parts In-Stock

1+ parts

-

100+ parts

$4.822

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10k+ parts

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21

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$4.822

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Overview

Unlock the future of your projects with the M50LPW041K1T from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for versatility and reliability, this high-performance Flash Memory offers exceptional speed and efficiency, ideal for consumer electronics, automotive, and industrial applications. With ST's commitment to quality, you gain peace of mind and superior support, ensuring your designs thrive while reducing time-to-market. Elevate your solutions with ST's proven technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy materials enhances the product's robustness and protects against environmental factors.

Surface Mount: YES

Surface mount technology allows for compact design and efficient use of PCB space, making it suitable for high-density applications.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized footprint, facilitating easier integration into various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation boosts data transfer rates, leading to improved performance in applications requiring fast memory access.

Nominal Supply Voltage / Vsup: 3.3 V

A nominal supply voltage of 3.3 V ensures compatibility with a wide range of modern electronic devices while minimizing power consumption.

Power Supplies (V): 3.3

This consistent voltage requirement simplifies power supply design and integration into existing systems.

No. of Terminals: 32

With 32 terminals, the chip offers a good balance between performance and complexity, facilitating efficient data management.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging supports various mounting techniques and provides better thermal performance, essential for high-performance applications.

Maximum Operating Temperature: 70 °C

The ability to operate up to 70 °C ensures reliability in environments with higher ambient temperatures.

Organization: 512KX8

The 512KX8 organization allows for flexible data storage and retrieval, making it suitable for a wide range of applications.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, this product can function effectively in moderate climate conditions.

No. of Sectors/Size: 8

Having 8 sectors provides better data management and error correction capabilities, enhancing reliability.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and connection longevity, which is crucial for maintenance-free applications.

Terminal Position: QUAD

Quad terminal positioning allows for efficient connectivity and can enhance electrical performance.

Maximum Seated Height: 3.55 mm

A low profile height of 3.55 mm allows for usage in compact electronic designs where space is a premium.

Width: 11.43 mm

The width provides a well-balanced footprint which aids in integration into various PCB layouts.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage of 3 V allows for flexible deployment in low-power devices.

Type: NOR TYPE

NOR type flash memory is ideal for random access applications providing optimal performance for boot code and firmware storage.

Length: 13.97 mm

The length of 13.97 mm supports a compact form factor while accommodating necessary connections.

Programming Voltage (V): 3

A programming voltage of 3 V reduces the risk of damage and ensures safer operation.

Temperature Grade: COMMERCIAL

Commercial-grade components are designed for standard environments, making them widely usable in consumer electronics.

Technology: CMOS

CMOS technology enables lower power consumption and higher density in memory applications.

Parallel or Serial: PARALLEL

Parallel data transfer allows for higher throughput, which is beneficial for applications that require high-speed data processing.

Terminal Form: J BEND

J bend terminal form allows for ease of handling and better stability during soldering.

Sector Size (Words): 64K

A sector size of 64K optimizes data management for large applications, allowing for efficient programming and erasing.

Maximum Supply Current: 60 mA

The maximum supply current of 60 mA ensures that the memory can perform efficiently while maintaining reasonable power consumption.

No. of Words: 524288 words

The capability to store 524288 words makes this memory chip suitable for moderate to large data applications.

Memory Width: 8

An 8-bit memory width provides a good balance between data throughput and complexity in interfacing.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27 mm allows for compatibility with a range of PCBs and enhances soldering reliability.

No. of Words Code: 512K

A capacity of 512K words is suitable for many applications, including embedded systems and consumer electronics.

Command User Interface: YES

A command user interface allows for easy manipulation and control of the memory functions, enhancing user experience.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6 V, this product remains flexible for various circuit designs while ensuring safety.

Boot Block: TOP

The top boot block design enables quick access to critical boot code, which improves the overall system startup time.

Memory Density: 4194304 bit

A memory density of 4194304 bits indicates a high capacity suitable for modern applications that require substantial data storage.

Memory IC Type: FLASH

As a flash memory IC, it provides non-volatile storage, retaining data even when power is removed.

Maximum Standby Current: 0.000005 Amp

Very low maximum standby current ensures minimal power consumption when the device is inactive, which is vital for battery-powered applications.

Maximum Access Time: 11 ns

An access time of 11 ns allows for rapid data retrieval, supporting high-speed applications and improving overall system responsiveness.

Technical Specifications

Flash Memory M50LPW041K1T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Sector Size (Words):

64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50LPW041K1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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